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    MA-COM SOT Search Results

    MA-COM SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MA-COM SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ACS1086S equivalent

    Abstract: ACS108 equivalent acs1086s ACS108-6S application acs1086s ACS1-086S ACS1086SG ACS108-6SN ACS108-6SX ACS108-6SA
    Text: ACS108-6S AC switch family Transient voltage protected AC Switch ACS Main product characteristics IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 10 mA • Overvoltage protection by crowbar technology ■ High noise immunity - static dV/dt > 500 V/µs COM COM G COM


    Original     		PDF ACS108-6S OT-223 ACS108-6SN ACS108-6SA ACS1086S equivalent ACS108 equivalent acs1086s ACS108-6S application acs1086s ACS1-086S ACS1086SG ACS108-6SN ACS108-6SX ACS108-6SA

    ACS1086S equivalent

    Abstract: ACS108 equivalent application acs1086s ACS 08 6s ACS1-086S acs1086s ACS108-6S ACS108-6SN ACS108-6SX ACS108-6SA-AP
    Text: ACS108-6S AC switch family Transient voltage protected AC Switch ACS Main product characteristics IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 10 mA • Overvoltage protection by crowbar technology ■ High noise immunity - static dV/dt > 500 V/µs COM COM G COM


    Original     		PDF ACS108-6S OT-223 ACS108-6SN ACS108-6SA ACS1086S equivalent ACS108 equivalent application acs1086s ACS 08 6s ACS1-086S acs1086s ACS108-6S ACS108-6SN ACS108-6SX ACS108-6SA-AP

    L2 sot26

    Abstract: No abstract text available
    Text: MAAL-007304 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • Low Noise Figure: 0.7 dB at 2.3 GHz Single +3 to +5 V Supply Bias Low Current: 11.5 mA typical Lead-Free SOT-26 Plastic Package


    Original     		PDF MAAL-007304 OT-26 MAAL-007304 L2 sot26

    MAAL-007306

    Abstract: No abstract text available
    Text: MAAL-007306 Low Noise Amplifier 0.5 - 2.0 GHz M/A-COM Products Rev. V1 Functional Schematic Features • • • • • • • • Low Noise Figure: 0.7 dB at 1.7 GHz Single Positive Bias High OIP3: 27 dBm at 90 mA Current Tunable over wide frequency range


    Original     		PDF MAAL-007306 MAAL-007306 OT-26

    Untitled

    Abstract: No abstract text available
    Text: MAAL-007306 Low Noise Amplifier 0.5 - 2.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • • Low Noise Figure: 0.7 dB at 1.7 GHz Single Positive Bias High OIP3: 27 dBm at 90 mA Current Tunable over wide frequency range


    Original     		PDF MAAL-007306 MAAL-007306 OT-26

    Untitled

    Abstract: No abstract text available
    Text: MAAL-007306 Part Status: Preliminary V1P Low Noise Amplifier 0.5 - 2.0 GHz M/A-COM Products RoHS Compliant Functional Schematic Features • • • • • • • • Low Noise Figure: 0.7 dB at 1.7 GHz Single +3 to +5 V Supply Voltage High OIP3 = 28 dBm at 90 mA Current


    Original     		PDF MAAL-007306 26-6LD MAAL-007306 OT-26

    071CN

    Abstract: No abstract text available
    Text: JtiK " >' P54/74FCT632/U/A/B P54/74PCT632/U/A/B ULTRA HIGH SPEED 32-BIT ERROR DETECTION AND CORRECTION UNITS 7$ FEATURES • Function, Pinout, and Drive Compatible with the FCT, F Logic and 74AS632 ■ 24 mA Sink Current (Com’l), 12 mA (Mil) 2.6 mA Source Current (Com’l), 1 mA (Mil)


    OCR Scan     		PDF P54/74FCT632/U/A/B P54/74PCT632/U/A/B) 32-BIT 74AS632 071CN

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Semiconductors SOD8O SOT23 & D035 QuadroMELF Small-Signal Dual Diodes in SOT23 Package Vrr M V 70 70 70 Part Number BAV70 BAV99 BAW56 Com m on cathode Connected in series Com m on anode Electrical Characteristics Vp at Ip I r at V r V V lA mA <1 <2.5


    OCR Scan     		PDF BAV70 BAV99 BAW56 BA479G BA479S BA679 BA679S BA779 BA779S BA779-2"

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


    OCR Scan     		PDF 68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23

    BCV65

    Abstract: BCV65B SOT143B pnp matched pair
    Text: Philips Semiconductors Product specification NPN/PNP general purpose transistors BCV65; BCV65B PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 30 V). 1 ,3 APPLICATIONS DESCRIPTION co lle cto r 2 com m on base 4 com m on em itter • G eneral purpose sw itching and am plification.


    OCR Scan     		PDF BCV65; BCV65B OT143B BCV65 MAM333 OT143B) SOT143B pnp matched pair

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF820; BF822 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.


    OCR Scan     		PDF BF820; BF822 BF821; BF823. BF820 BF822

    transistor marking fl

    Abstract: BF822W
    Text: Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.


    OCR Scan     		PDF BF820W; BF822W BF820W OT323) BF822W BF820ALUE transistor marking fl

    BF777W

    Abstract: BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606
    Text: RF Bipolar Transistors For com plete package outlines, refer to pages PO-1 through PO-6 T yp e M a x im u m Ratings VCEO 'c N=NPN /t V mA mW GHz dB 'c mA VCE / V MHz 15 40 20 35 35 20 25 30 30 12 12 12 12 20 20 20 20 40 40 12 12 12 12 15 15 12 15 12 15 16


    OCR Scan     		PDF 6SOT323 OT323 BF777W BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification 2PC4617J NPN general purpose transistor FEATURES PINNING • P ow er dissipation com parable to S O T23 PIN DESCRIPTION • Low output capacitance 1 base • Low saturation voltage VcEsat 2 e m itte r • Low curren t max. 100 mA


    OCR Scan     		PDF 2PC4617J A1774J. 4617JQ OT49Q

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r T elephony P rofessional com m unication equipm ent.


    OCR Scan     		PDF PMBTA92 BTA42. BTA92

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 em itter • V ideo • T elephony • P rofessional com m unication equipm ent.


    OCR Scan     		PDF MPSA42; MPSA43 MPSA92. PSA42 PSA43 SC-43

    FZT600

    Abstract: FZT603
    Text: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE|sat Max VcBO V v CEO V ^C cont) A <o h :E Type 160 140 2.0 2.0 Min/M ax Typ MHz t,t Com plem ent 1000/10 150- - 150 FZT705 150 FZT704 at lc / VCE m A / Volts Volts at l c / Iß mA


    OCR Scan     		PDF OT223 FZT600 1K/2K/100K FZT605 5K/2K/100K FZT604 FZT603 2K/100K 500/FZTA14

    Untitled

    Abstract: No abstract text available
    Text: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE sa t Max h -E Type V lc(cont) A Ptot W M in/M ax 160 140 2.0 2.0 FZT605 140 120 2.0 2.0 FZT604 120 100 2.0 2.0 v CBO v CEO V FZT600 fT Typ MHz Com plem ent - at Iq / V ce mA / Volts


    OCR Scan     		PDF OT223 FZT605 FZT604 FZT600 2K/100K FZT705 FZT704

    Untitled

    Abstract: No abstract text available
    Text: SOT223 SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter ^tot W M in/M ax 0.6 1.5 30 0.6 -60 -60 FZT2907 -60 FZT4403 -40 v CBO v CEO V V FZT2222A 75 40 FZT2222 60 FZT2907A v CE sa t Max h :E i< _CJ Type h Typ MHz Com plem ent at lc / Vce mA / Volts


    OCR Scan     		PDF OT223 FZT2222A FZT2222 FZT2907A FZT2907 FZT4403 FZT2907

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • T elepho ny and professional com m unication equipm ent.


    OCR Scan     		PDF PMBTA42 BTA92. BTA42 MAM255

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 30 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • RF stages in FM front-ends in com m on base


    OCR Scan     		PDF BF824 MAM256

    fzt458

    Abstract: No abstract text available
    Text: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658


    OCR Scan     		PDF OT223 2814-Collector, FZT658 FZT458 BSP19 FZT657 BFN38 FZTA42 BFN36 BSP20

    SERVICE MANUAL tv TCL

    Abstract: ED06 ED08 internal circuit diagram for ic 4047 C161 C161RI C166 SAB-C161RI-LF SAB-C161RI-LM SAF-C161RI-LM
    Text: SIEMENS Data Sheet 0198 Advance Information This Material C o p yright ed By Its Respec tive Ma nufac turer C161RI Revision History: 1998-01 A dvance Inform ation P revious Releases: 1997-12 A dvance Inform ation P age S ubjects 7 RSTIN description com pleted with bidirectional reset.


    OCR Scan     		PDF C161RI D-81541 25max C161RI P-TQFP-100-1 DTH14x SERVICE MANUAL tv TCL ED06 ED08 internal circuit diagram for ic 4047 C161 C166 SAB-C161RI-LF SAB-C161RI-LM SAF-C161RI-LM

    marking code IC .ztz

    Abstract: ZtZ MARKING marking code ER transistor
    Text: Philips Semiconductors Preliminary specification NPN general purpose double transistor FEATURES PUMX1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.


    OCR Scan     		PDF SC-88 OT363 marking code IC .ztz ZtZ MARKING marking code ER transistor