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Catalog Datasheet	MFG & Type	PDF	Document Tags
Intel 2118 Abstract: MB811B-10 DIP-16P-M01 Text: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage	OCR Scan	PDF	384-BIT MB8118 M88118 16-pin MB8118-10/MB8118-12 16-LEAD IP-16C-C03 DIP-16P-M01 Intel 2118 MB811B-10 DIP-16P-M01

Catalog Datasheet

MFG & Type

PDF

Document Tags

Intel 2118

Abstract: MB811B-10 DIP-16P-M01
Text: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage

OCR Scan

PDF

384-BIT MB8118 M88118 16-pin MB8118-10/MB8118-12 16-LEAD IP-16C-C03 DIP-16P-M01 Intel 2118 MB811B-10 DIP-16P-M01