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    dc m7 footprint

    Abstract: sma M7 diode sma M4 diode sma m7 marking of m7 diodes diode dc components m7 footprint M1-M7 Rectifier Diode diode m7 M7 diode footprint wave soldering M7 DO-214AC
    Text: M1 – M7 WTE POWER SEMICONDUCTORS 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss A Built-in Strain Relief


    Original     		PDF SMA/DO-214AC MIL-STD-750, dc m7 footprint sma M7 diode sma M4 diode sma m7 marking of m7 diodes diode dc components m7 footprint M1-M7 Rectifier Diode diode m7 M7 diode footprint wave soldering M7 DO-214AC

    wl11-r130

    Abstract: P2430 WTE11-2P2432 WL11-2N2430 WL11-2N2430F38 WTE11-2 WL11-2P2430 WL11-2 WTE11-2N1132F38 WL11-2N1130F38
    Text: DB_W11_2_en.fm Seite 8 Donnerstag, 15. April 2010 1:53 13 Photoelectric proximity sensor, WTE11-2, energetic, red light, single teach button – DC Dimensional drawing 1 29.9 7.3 3.2 5 23.1 7 6.1 5.1 2 48.5 ø 4.2 5 22.5 Sensitivity adjustable via Teach-in, single button


    Original     		PDF WTE11-2, AC-15, DC-13 WL11-R130F38 wl11-r130 P2430 WTE11-2P2432 WL11-2N2430 WL11-2N2430F38 WTE11-2 WL11-2P2430 WL11-2 WTE11-2N1132F38 WL11-2N1130F38

    53MC CONTROLLER

    Abstract: RDRAM SOP OKI D51 MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 78D SOP
    Text: E2G1059-28-Y1 This version: Nov. 1998 MSM5718C50/MD5764802 Previous version: Jul. 1998 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb 2M ¥ 9 & 64Mb (8M ¥ 8) Concurrent RDRAM DESCRIPTION The 18/64-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed


    Original     		PDF E2G1059-28-Y1 MSM5718C50/MD5764802 18/64-Megabit SHP32-P-1125-0 53MC CONTROLLER RDRAM SOP OKI D51 MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K 78D SOP

    RDRAM SOP

    Abstract: OKI D51 concurrent rdram MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 ACTV m3 OKI D51 a24
    Text: E2G1059-39-21 This version: Feb. 1999 MSM5718C50/MD5764802 Previous version: Nov. 1998 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb 2M ¥ 9 & 64Mb (8M ¥ 8) Concurrent RDRAM DESCRIPTION The 18/64-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed


    Original     		PDF E2G1059-39-21 MSM5718C50/MD5764802 18/64-Megabit RDRAM SOP OKI D51 concurrent rdram MD5764802-53MC MD5764802-60MC MSM5718C50-53GS-K MSM5718C50-60GS-K SHP32-P-1125-0 ACTV m3 OKI D51 a24

    m15m

    Abstract: MSM5718C50 MSM5718C50-53GS-K MSM5718C50-60GS-K
    Text: e Pr lim MSM5718C50 18-Megabit Concurrent RDRAM 2M ¥ 9 DESCRIPTION The 18-Megabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits


    Original     		PDF MSM5718C50 18-Megabit SHP-32 m15m MSM5718C50 MSM5718C50-53GS-K MSM5718C50-60GS-K

    WL11G-2B2531

    Abstract: WTB11-2P2461 WTB11-2P2431 wte11-2p2432 WL11-2P2430 WL11-2N2430 DOL-1205-G15M WTF11-2P2431 WTB11-2N2431 WTB11-2
    Text: WTB11-2 with background blanking WTF11-2 with foreground blanking when objects with inhomogeneous surfaces should be detected reliably. WTE11-2, energetic photoelectric switch if large scanning distances are required. WL11-2, photoelectric reflex switch, the tried-and-tested solution with


    Original     		PDF WTB11-2 WTF11-2 WTE11-2, WL11-2, WL11G, W11-2 WSE11-2, WL11G-2B2531 WTB11-2P2461 WTB11-2P2431 wte11-2p2432 WL11-2P2430 WL11-2N2430 DOL-1205-G15M WTF11-2P2431 WTB11-2N2431

    concurrent rdram

    Abstract: RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72
    Text: Preliminary Information Concurrent RDRAM ® 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) RAMBUS Overview The 16/18/64/72-Mbit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns


    Original     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-Mbit 600MHz DL0029-07 concurrent rdram RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72

    concurrent RDRAM 72 9

    Abstract: MD5764802 MSM5718C50 18MSHP concurrent RDRAM 72
    Text: J2G1059-39-21 ¡ 電子デバイス 作成：1999年 2月 前回作成：1998年11月 MSM5718C50/MD5764802 l MSM5718C50/MD5764802 18Mb（2Mx9）& 64Mb（8M×8）Concurrent RDRAM n 概要 18/64メガビットコンカレントRambus‘ DRAM（RDRAM）は2Mまたは8Mワード×8または9ビット構


    Original     		PDF J2G1059-39-21 MSM5718C50/MD5764802 MSM5718C50/MD5764802 18Mb2M 64Mb8M 18/64Rambus` 600MHz 600MB/s480MB/s RSL1332 242KB concurrent RDRAM 72 9 MD5764802 MSM5718C50 18MSHP concurrent RDRAM 72

    OKI D51 a24

    Abstract: OKI D51 MD5764802 MSM5718C50 MD5764802-53MC 141oC concurrent rdram concurrent RDRAM 72 9 13c64 concurrent rdram oki
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G1059-39-21 MSM5718C50/MD5764802 MSM5718C50/MD5764802 18Mb2M 64Mb8M 18/64Rambus` 600MHz 600MB/s480MB/s RSL1332 242KB OKI D51 a24 OKI D51 MD5764802 MSM5718C50 MD5764802-53MC 141oC concurrent rdram concurrent RDRAM 72 9 13c64 concurrent rdram oki

    addressing modes of ADSP-210XX

    Abstract: ADSP-210xx addressing modes addressing modes in adsp-210xx Cc21k 7 segment digital display ADSP21020 adsp-210XX interrupt Assembly sharc memory compiler ADSP21060
    Text: 2 COMPILER Contents Index Figure 2-0. Table 2-0. Listing 2-0. The C compiler Cc21k compiles ANSI standard C code for ADSP-210xx DSP systems. A number of C language extensions in the compiler aid DSP development. This compiler runs within the VisualDSP environment or from an operating system command line. The sections of


    Original     		PDF Cc21k) ADSP-210xx 80-bit R0-R15 F0-F15 ADSP-2106x addressing modes of ADSP-210XX ADSP-210xx addressing modes addressing modes in adsp-210xx Cc21k 7 segment digital display ADSP21020 interrupt Assembly sharc memory compiler ADSP21060

    sharc ADSP-21xxx architecture

    Abstract: addressing modes of ADSP-210XX ADSP-210xx addressing mode ADSP-21xxx ADSP-21XXX MEMORY cc21k adsp-210XX instruction set ADSP-210xx sharc 21xxx reference manual compiler ADSP21060
    Text: 2 COMPILER Contents Figure 2-0. Table 2-0. Listing 2-0. Listing 2-0. Overview The C compiler cc21k compiles ANSI standard C code for ADSP-21xxx DSP systems. A number of C language extensions in the compiler aid DSP development. This compiler runs within the VisualDSP environment or


    Original     		PDF cc21k) ADSP-21xxx ADSP-210xx 80-bit R0-R15 F0-F15 ADSP-21xxx sharc ADSP-21xxx architecture addressing modes of ADSP-210XX ADSP-210xx addressing mode ADSP-21XXX MEMORY cc21k adsp-210XX instruction set sharc 21xxx reference manual compiler ADSP21060

    WL23-2P2430

    Abstract: WL23-2N2430 P2430 WL23-2P3430 WL23-2P1130 2P2430 WL23-2S1530 S3730 2N2430
    Text: KD01_W23_2_en.qxd 28.07.2006 11:08 Uhr Seite 758 W23-2 Photoelectric switches Photoelectric proximity switches, BGB Photoelectric proximity switches, energetic W23-2: Focussing on what is essential and economic Photoelectric reflex switches for 24 V DC or 240 V AC operation, the integration into machinery or systems is made easy.


    Original     		PDF W23-2 W23-2: W23-2 WL23-2S1530 WL23-2S3730 WL23-2P2430 WL23-2N2430 P2430 WL23-2P3430 WL23-2P1130 2P2430 WL23-2S1530 S3730 2N2430

    ADSP-21XXX architecture

    Abstract: ADSP-21020 ADSP-21060 ADSP-21065L ADSP-21160 ADSP-21262 ADSP-21363 ADSP-21367 ADSP-21375 fuller 1137
    Text: W5.0 C/C+ Compiler Manual for SHARC Processors Revision 1.0, August 2007 Part Number 82-001963-02 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2006 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent


    Original     		PDF

    ADSP-21XXX architecture

    Abstract: adsp21xxx ADSP21000 ADSP-21000 ADSP-21020 ADSP21060 ADSP-21060 ADSP-21161 ADSP-21375 CC21K
    Text: W5.0 C/C+ Compiler Manual for SHARC Processors Revision 1.1, August 2008 Part Number 82-001963-02 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2008 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent


    Original     		PDF

    TC9405

    Abstract: TC9405I 6522 mos 1134 scr SCR GATE DRIVER Bar-Graph Display Driver LED BARGRAPH peripheral driver DISPLAY HA 1133 R DRIVER SCR
    Text: TELEDYNE 3bE » COMPONENTS • ôWbOE □Q07723 M « T S C WTELEDYNE COMPONENTS TC9405 16-BIT PARALLEL-LATCHED OUTPUT PERIPHERAL DRIVER FEATURES Saturation Voltage vs Sink Current ■ ■ ■ ■ ■ ■ ■ High Voltage


    OCR Scan     		PDF Q07723 TC9405 16-BIT flT17bOE D00772Ö TC9405_ TC9405I 6522 mos 1134 scr SCR GATE DRIVER Bar-Graph Display Driver LED BARGRAPH peripheral driver DISPLAY HA 1133 R DRIVER SCR

    hfdw

    Abstract: No abstract text available
    Text: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC)


    OCR Scan     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-M 600MHz hfdw

    samsung concurrent rdram

    Abstract: RDRAM CONCURRENT KM49RC2H-A60 samsung datecode rdram concurrent Samsung concurrent rdram concurrent RDRAM 72 RDRAM Clock concurrent rdram samsung
    Text: Preliminary KM48 9 RC2H Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs (RDRAM ) are Part No. Org. frequency by 8 or 9 bits. They are capable of bursting unlimited lengths of KM49RC2H-A53 2M x 9 533Mhz data at 1.5ns per byte (12.0ns per eight bytes). The use of Ram­


    OCR Scan     		PDF 18Mbit 667MHz SHP-32 samsung concurrent rdram RDRAM CONCURRENT KM49RC2H-A60 samsung datecode rdram concurrent Samsung concurrent rdram concurrent RDRAM 72 RDRAM Clock concurrent rdram samsung

    RDRAM CONCURRENT

    Abstract: samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H
    Text: Preliminary Concurrent RDRAM KM48 9 RC2H 16/18Mbit R D R A M 2M X 8/9bit Concurrent RAMBUS DRAM Revision 0.7 February 1998 Rev. 0.7 (Feb. 1998) Preliminary Concurrent RDRAM KM48(9)RC2H Revision History Revision 0.5 (October 1997) - Preliminary • . Changed Peak TrasferRate from 700Mbps to 667Mbps. (page 1)


    OCR Scan     		PDF 16/18Mbit 700Mbps 667Mbps. SHP-32 RDRAM CONCURRENT samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H

    KM49RC2H-A60

    Abstract: RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram
    Text: KM48RC2H/KM49RC2H Concurrent RDRAM 2M X 8 / 2 M x 9 Concurrent RDRAM Overview Ordering Information The 16 / 18Mbit Concurrent Rambus DRAMs RDRAM are Part No. Org. frequency KM49RC2H-A60 2M X 9 600Mhz extremely high-speed CMOS DRAMs organized as 2M words


    OCR Scan     		PDF KM48RC2H/KM49RC2H 18Mbit 667MHz SHP-32 KM49RC2H-A60 RDRAM CONCURRENT KM49RC2H samsung datecode samsung concurrent rdram RC2H-A66 concurrent RDRAM 72 9 concurrent rdram

    HY5RC1809

    Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53
    Text: HY5RC1809 / 6408 Series “HYUNDAI 18Mb 2Mx9 / 64Mb(8Mx8), Concurrent RDRAM Preliminary Overview The 18/64M b C o n cu rre n t R am bus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits or 8M words by 8 bits. They are capable of bursting unlimited length of


    OCR Scan     		PDF 18/64M SVP-32 HY5RC1809 concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53

    Untitled

    Abstract: No abstract text available
    Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted


    OCR Scan     		PDF E2G1059-18-74 16M/18Mb MSM5716C50/M 5718C50/ D5764802 /64-M

    RDRAM SOP

    Abstract: rdram clock generator concurrent RDRAM 72 RDRAM concurrent
    Text: E2G1059-28-Y1 O K I Semiconductor M S M 5 7 1 8 C 5 / M P 5 7 Previous version: Jul. 1998 6 4 8 2 ~ 18Mb 2M x 9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 18/64-M egabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M or 8 M words by 8 or 9 bits. They are capable of bursting unlimited


    OCR Scan     		PDF E2G1059-28-Y1 18/64-M SHP32-P-1125-0 RDRAM SOP rdram clock generator concurrent RDRAM 72 RDRAM concurrent

    pro ctv circuit diagram

    Abstract: MSM5718C50 MSM5718C50-53GS-K MSM5718C50-60GS-K REF10 concurrent rdram oki
    Text: DESCRIPTION The 18-M egabit C oncurrent Ram bus DRAMs RDRAM are extrem ely high-speed CMOS DRAMs organized as ZM w ords by 9 bits. They are capable of bursting unlim ited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Ram bus Signaling Level (RSL) technology perm its


    OCR Scan     		PDF 18-Megabit SHP-32 MSM5718C50 pro ctv circuit diagram MSM5718C50 MSM5718C50-53GS-K MSM5718C50-60GS-K REF10 concurrent rdram oki

    D1384

    Abstract: AC12FGM MSI 6945 AC12DGM 6111 WA NEC AC12 ft-03 LT 2806
    Text: T h y r is to r s A C 1 2 D G M , A C 1 2 F G M 1 2 A i- ; U K T R I A C A C 12 r Affili # f ö : J G M l i m $ } j * > m i È 1 2 A < D 3 : M ï ï c m s£->l' K T R I A C T ” , IS <oi l l t ° - * t y n m t m v , 6oo v - r - f 0 4.8 MAX. ft « o Y -


    OCR Scan     		PDF AC12DGM AC12FGM O-220AB UL94V-O) fsS50 D1384 AC12FGM MSI 6945 6111 WA NEC AC12 ft-03 LT 2806