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    Mitsubishi Electric M5M411664AJ-7

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    Bristol Electronics M5M411664AJ-7 4,000
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    mit M5M411664AJ7

    64K X 16 FAST PAGE DRAM Fast Page DRAM, 64KX16, 70ns, CMOS, PDSO40
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    ComSIT USA M5M411664AJ7 1,000
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    M5M411665AJ

    Abstract: m5m411665atp3 M5M411664AJ m5M418128 M5M411664AJ7 M5M4116
    Text: MEMORIES BUFFER M E M O R IE S • 1M BUFFER MEMORIES Memory capacity . Mwinory ■ Configuration Function mod« Mçx. Typ. accsss power time dwsipation mW <*} Fast Page 1CAS/2W 50 625 60 550 70 475 50 Fast Page 1CAS/2W 60 Self-Refresh mode Low Power


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