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    M58LT256GT1ZA

    Abstract: M58LT256G M58LT256GT m58lr256 CR10
    Text: M58LT256GT M58LT256GB 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory Features summary • ■ Supply voltage – VDD = 1.7V to 2.0V for Program, Erase and Read – VDDQ = 2.7V to 3.6V for I/O buffers – VPP = 9V for fast program


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    PDF M58LT256GT M58LT256GB 52MHz 110ns TBGA64 M58LT256GT1ZA M58LT256G M58LT256GT m58lr256 CR10

    M29F STMicroelectronics

    Abstract: m29F DATASHEET "NOR Flash" 4MB 256mb flash STMicroelectronics tsop56 TFBGA48 m28w160es TSOP40 Device M29F010B M29W160 nor flash of 4mb
    Text: NOR Flash memories for consumer applications January 2006 www.st.com/flash Outstanding solutions for every requirement The broad and differentiated consumer application market has an ongoing demand for stable and reliable standard NOR Flash devices, in a variety of densities with specific


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    PDF TBGA64 BRFLASHCON0106 M29F STMicroelectronics m29F DATASHEET "NOR Flash" 4MB 256mb flash STMicroelectronics tsop56 TFBGA48 m28w160es TSOP40 Device M29F010B M29W160 nor flash of 4mb