Untitled
Abstract: No abstract text available
Text: HFD3854 Silicon PIN Photodiode ELEC TRO -O PTIC AL C H A R A C T E R IST IC S Te = 25°C unless otherwise stated PA R A M E T E R Peak Response Wavelength Flux Responsivity-1' SYM BO L Ap R MIN 0.45 Dark Leakage Current Reverse Breakdown Voltage Package Capacitance
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HFD3854
FIBER034
FJBER101
M55183D
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HOA1180002
Abstract: HOA1180-001
Text: HOA1180 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • High sensitivity • Wide operating temperature range -55°C to +100°C . 12.0 in.(305 mm) min. 28 AWG PVC insulated wire leads INFRA-24.TIF DESCRIPTION The HOA1180 series consists of an infrared emitting
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HOA1180
HOA1180-001,
HOA1180-003)
SE1450,
SD1440,
SD1410.
45Sia3D
0CI52b37
HOA1180002
HOA1180-001
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Untitled
Abstract: No abstract text available
Text: HFE4083-322 High Speed VCSEL FEATURES • Designed for drive currents between 5 and 15 mA • Optimized for low dependence of electrical properties over temperature • High speed s1 GHz • Two different laser/photodiode polarities • Packaged with a photodetector
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HFE4083-322
HFE4083-322
OGRAJ49
0217ti3
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