74hc38
Abstract: M54HC386 M54HC386F1R M74HC386 M74HC386B1R M74HC386C1R M74HC386M1R
Text: M54HC386 M74HC386 QUAD EXCLUSIVE OR GATE . . . . . . . . HIGH SPEED tPD = 10 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE
|
Original
|
PDF
|
M54HC386
M74HC386
54/74LS386
M54HC386F1R
M74HC386M1R
M74HC386B1R
M74HC386C1R
M54/74HC386
74hc38
M54HC386
M54HC386F1R
M74HC386
M74HC386B1R
M74HC386C1R
M74HC386M1R
|
Untitled
Abstract: No abstract text available
Text: SfaE D • 7 ^ 2 3 7 0G4G20G T - H Z - Z - T51 ■S G TH / T 7 S C S -T H O M S O N *7# M54HC386 M74HC386 S G S- THOMSON QUAD EXCLUSIVE-OR GATE ■ HIGH SPEED tpo = 14 ns TYP.) at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 /*A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY
|
OCR Scan
|
PDF
|
0G4G20G
M54HC386
M74HC386
54/74LS386
M54HC386
|
Untitled
Abstract: No abstract text available
Text: M54HC386 M74HC386 / = T SGS-THOMSON ^ 7 # [^]D g^ [lL[l©¥^(S [faO©i QUAD EXCLUSIVE-OR GATE • HIGH SPEED tpo = 14 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION lCc = 1 mA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY VnIH = VnIL= 28% Vcc (MIN.)
|
OCR Scan
|
PDF
|
M54HC386
M74HC386
M54HC386
M74HC386
54/74LS386
|
74HC386
Abstract: No abstract text available
Text: S G S -T H O M S O N *7# ülDigœLKgraMôigi M54HC386 M74HC386 QUAD EXCLUSIVE-OR GATE • HIGH SPEED tpD = 14 ns TYP. at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 (<A (MAX.) at Ta =25°C ■ HIGH NOISE IMMUNITY V n IH = v NIL= 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY
|
OCR Scan
|
PDF
|
M54HC386
M74HC386
54/74LS386
M74HC386
M54/74HC386
74HC386
|
lO552
Abstract: No abstract text available
Text: r z 7 SCS-THOMSON Ä 7 # RÆDMôm[EOT o*S M54HC386 M74HC386 QUAD EXCLUSIVE OR GATE • HIGH SPEED tpD = 10 ns (TYP. AT V c c = 5 V . LOW POWER DISSIPATION Ice = 1 fiA (MAX.) AT Ta = 25 °C . HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY
|
OCR Scan
|
PDF
|
M54HC386
M74HC386
54/74LS386
54HC386F1R
74HC386M
74HC386B1R
386C1R
M54/74HC386
lO552
|
74HC386
Abstract: LS386 54HC 74HC M54HC386 M74HC386 74hc38
Text: M54HC386 M74HC386 HS-CMOS" INTEGRATED CIRCUJJS o 7 ^ P R E L IM IN A R Y D A T A QUAD EXCLUSIVE-OR GATE DESCRIPTION The M 54/74HC386 is a high speed CM OS QUAD EXCLUSIVE-OR GATE fabricated in silicon gate C2MOS technology. It has the same high speed perform ance of LSTTL
|
OCR Scan
|
PDF
|
M54HC386
M74HC386
M54/74HC386
M74HC386
to125Â
74HC386
LS386
54HC
74HC
74hc38
|
74HC386
Abstract: No abstract text available
Text: r Z J S G S -T H O M S O N Ä 7 # « M ilL iO T M D O S M 54HC386 M 74HC386 QUAD EXCLUSIVE OR GATE • HIGHSPEED tPD = 10 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 1 nA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY V nih = Vnil = 28 % Vcc (MIN.)
|
OCR Scan
|
PDF
|
54HC386
74HC386
54/74LS386
M54/74HC386
74HC386
|
