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STMicroelectronics M54HC132KT NAND Gate 4-Element 8-IN CMOS 14-Pin CFPAK Strip - Bulk (Alt: M54HC132KT)
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Avnet Americas	M54HC132KT	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics M54HC132K1 M54HC Rad-Hard Quad 2-Input Schmitt NAND Gate CMOS 2V to 6V 14-Pin Flat SMD Carrier Tape - Bulk (Alt: M54HC132K1)
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Avnet Americas	M54HC132K1	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics M54HC132KG NAND Gate 4-Element 2-IN CMOS 14-Pin CFLAT Carrier T/R (Alt: M54HC132KG)
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Avnet Silica	M54HC132KG			17 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

M54HC132K Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
M54HC132K		STMicroelectronics	RAD-HARD QUAD 2-INPUT SCHMITT NAND GATE		Original	PDF
M54HC132K1		STMicroelectronics	RAD-HARD QUAD 2-INPUT SCHMITT NAND GATE		Original	PDF

M54HC132K Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
940900701F Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC	Original	PDF	M54HCxxx M54HCTxxx Flat-16 DIL-16 Flat-14 DIL-14 M54HCTxxx 940900701F 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
M54HC132 Abstract: M54HC595KG M54HC138KG 920112001F Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics	Original	PDF	M54HCxxx, M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 DocID17367 M54HC132 M54HC595KG M54HC138KG 920112001F
54HC4053 Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC	Original	PDF	M54HCxxx M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 Flat-20 DIL-20 Flat-24 DIL-24 54HC4053 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
M54HC132 Abstract: M54HC00 M54HC132D M54HC132K M54HC132K1 Text: M54HC132 RAD-HARD QUAD 2-INPUT SCHMITT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 11ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VH(TYP.) = 0.9 V AT VCC = 5 V SYMMETRICAL OUTPUT IMPEDANCE:	Original	PDF	M54HC132 SCC-9201-120 M54HC132 M54HC00 M54HC132D M54HC132K M54HC132K1
940900703F Abstract: No abstract text available Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC	Original	PDF	M54HCxxx M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 Flat-20 DIL-20 Flat-24 DIL-24 940900703F
940806401F Abstract: No abstract text available Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics	Original	PDF	M54HCxxx, M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 DocID17367 940806401F