Untitled
Abstract: No abstract text available
Text: M30L0T8000T2 M30L0T8000B2 256 Mbit 16 Mb x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M30L0T8000T2
M30L0T8000B2
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M36L0T8060
Abstract: flash E2p M69KW096B
Text: M36L0T8060T1 M36L0T8060B1 256 Mbit 16 Mb x16, multiple bank, multilevel, burst Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory
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M36L0T8060T1
M36L0T8060B1
M36L0T8060T1:
880Dh
M36L0T8060B1:
880Eh
TFBGA88
M36L0T8060
flash E2p
M69KW096B
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