K d998 transistor
Abstract: lz 02 1068 D844 voltage regulator
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
K d998 transistor
lz 02 1068
D844 voltage regulator
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a6583
Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
a6583
CR10
J-STD-020B
M30L0R8000B0
M30L0R8000T0
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Untitled
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
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PSRAM
Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36L0R8060T1
M36L0R8060B1
M36L0R8060T1:
880Dh
M36L0R8060B1:
880Eh
54MHz
PSRAM
RAM 2112 256 word
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36L0R8060B1
M36L0R8060T1
M69KB096AA
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Untitled
Abstract: No abstract text available
Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M30L0R8000T2
M30L0R8000B2
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t3383
Abstract: No abstract text available
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
t3383
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w16 72
Abstract: DES Encryption TMS320
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
w16 72
DES Encryption TMS320
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D844 voltage regulator
Abstract: 9427h 9216h
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
9427h
9216h
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d2f3
Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
Text: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS
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EG20T
324211-003US
EG20T
EG20T--Ballout
d2f3
delta dps 298 cp 2A
DSCA 114 communication board
B43200
MSI 7680 Ver 5.1
Intel ATX smps circuit diagram
Intel Atom E6xx
SMPS 666 VER 2.3
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CR10
Abstract: 4047N
Text: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)
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M30L0T8000T0
M30L0T8000B0
52MHz
LFBGA88
CR10
4047N
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mmc 4050
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
mmc 4050
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7900f-d
Abstract: No abstract text available
Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36LLR8860T1,
M36LLR8860D1
M36LLR8860M1,
M36LLR8860B1
M36LLR8860T1:
880Dh
M36LLR8860D1:
880Eh
7900f-d
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D438 F28
Abstract: D844 voltage regulator D880 1408 9618H 7410 40E4 BE12h F21Ah 8e18h K D882 Y 139 codebook transistor
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D438 F28
D844 voltage regulator
D880 1408
9618H
7410 40E4
BE12h
F21Ah
8e18h
K D882 Y 139
codebook transistor
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M58LR256KB
Abstract: M58LR128KB
Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58LR128KT
M58LR128KB
M58LR256KT
M58LR256KB
M58LR128KT/B
M58LR256KT/B
M58LR256KB
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CR10
Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
CR10
J-STD-020B
M30L0R8000B0
M30L0R8000T0
JEDEC J-STD-020B
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M30L0R8000T
Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
Text: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36LLR8860T1,
M36LLR8860D1
M36LLR8860M1,
M36LLR8860B1
M36LLR8860T1:
880Dh
M36LLR8860D1:
880Eh
M30L0R8000T
RAM 2112 256 word
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36LLR8860D1
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D844 voltage regulator
Abstract: DES Encryption TMS320 tms320 sd D882 TRANSISTOR circuit example AA19 OMAP5912 GSM modem M10 d438 transistor AN 7818 voltage regulator K d998 transistor
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
DES Encryption TMS320
tms320 sd
D882 TRANSISTOR circuit example
AA19
GSM modem M10
d438 transistor
AN 7818 voltage regulator
K d998 transistor
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D844 voltage regulator
Abstract: K d998 transistor j 5804 f11 9405h DES Encryption TMS320
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
K d998 transistor
j 5804 f11
9405h
DES Encryption TMS320
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M58LR256KB
Abstract: M58LR128KB M58LR128KT CR10 M58LR256KT 4047N
Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58LR128KT
M58LR128KB
M58LR256KT
M58LR256KB
M58LR128KT/B
M58LR256KT/B
M58LR256KB
M58LR128KB
CR10
4047N
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BE06
Abstract: CC08h
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
BE06
CC08h
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M36L0T8060
Abstract: flash E2p M69KW096B
Text: M36L0T8060T1 M36L0T8060B1 256 Mbit 16 Mb x16, multiple bank, multilevel, burst Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package • 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory
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M36L0T8060T1
M36L0T8060B1
M36L0T8060T1:
880Dh
M36L0T8060B1:
880Eh
TFBGA88
M36L0T8060
flash E2p
M69KW096B
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M69KR096A
Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
Text: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36L0R8060T0
M36L0R8060B0
M36L0R8060T0:
880Dh
M36L0R8060B0:
880Eh
54MHz
M69KR096A
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36L0R8060B0
M36L0R8060T0
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DB42
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
DB42
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EG20T
Abstract: delta dps 240 Fb Intel ATX smps circuit diagram Atom E6xx SMPS 666 VER 2.3
Text: Intel Platform Controller Hub EG20T Datasheet August 2011 Order Number: 324211-007US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS
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Original
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PDF
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EG20T
324211-007US
EG20T
EG20T--Ballout
delta dps 240 Fb
Intel ATX smps circuit diagram
Atom E6xx
SMPS 666 VER 2.3
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