EX-23-PN
Abstract: EX109 L040 CX-30 FX-11A FX-13 EX-26A ex20 wiring diagram EX-22A-PN
Text: SERIES Amplifier Built-in Ultra-compact Photoelectric Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS EX-20 FX-13 FX-11A Fiber Sensors Miniature-sized and Still Mountable with M3 Screws EX-10 CX-30 CX-RVM5/D100/ND300R Amplifier Built-in Type CX-20 FZ-10 Marked Conforming to EMC Directive
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EX-20
FX-13
FX-11A
FZ-10
EX-10
CX-30
CX-RVM5/D100/ND300R
CX-20
EX-20
MS-EX20-FS
EX-23-PN
EX109
L040
CX-30
FX-11A
FX-13
EX-26A
ex20 wiring diagram
EX-22A-PN
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Untitled
Abstract: No abstract text available
Text: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A
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NTE2373
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NTE2921
Abstract: No abstract text available
Text: NTE2921 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID
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NTE2921
NTE2921
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NTE2371
Abstract: No abstract text available
Text: NTE2371 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P–Channel D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID
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NTE2371
NTE2371
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NTE2374
Abstract: No abstract text available
Text: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
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NTE2374
NTE2374
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NTE2905
Abstract: NTE290 MOSFET p-CH
Text: NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P−Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings:
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NTE2905
00A/s,
NTE2905
NTE290
MOSFET p-CH
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ELECTROLYTIC CAPACITORS 220uF 25V
Abstract: TR-332 TDK 2822 M tdk mtbf
Text: Data Sheet: Asceta iQL Series –Single Output Quarter Brick TM Asceta iQL Series DC/DC Power Modules 48V Input, 28V / 11A /308W Output Quarter Brick The Asceta™ power module series provides exceptionally high true useable power in an industry standard quarter brick format. With
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/308W
8V/11A
ELECTROLYTIC CAPACITORS 220uF 25V
TR-332
TDK 2822 M
tdk mtbf
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ELECTROLYTIC CAPACITORS 220uF 25V
Abstract: TR-332 200W 6.8 ohm k ceramic resistor tdk mtbf
Text: Data Sheet: Asceta iQL Series –Single Output Quarter Brick TM Asceta iQL Series DC/DC Power Modules 48V Input, 28V / 11A /308W Output Quarter Brick The Asceta™ power module series provides exceptionally high true useable power in an industry standard quarter brick format. With
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/308W
8V/11A
ELECTROLYTIC CAPACITORS 220uF 25V
TR-332
200W 6.8 ohm k ceramic resistor
tdk mtbf
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Untitled
Abstract: No abstract text available
Text: SSFP11N50 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 500V Simple Drive Requirement ID25 = 11A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP11N50
00A/s
ISD11A
di/dt140A/S
width300S;
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035H
Abstract: IRFPE30
Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50APbF
O-247AC
IRFPE30
035H
IRFPE30
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IRFB11N50A
Abstract: IRFI840G
Text: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement
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IRFIB7N50APbF
O-220
IRFI840G
IRFB11N50A
IRFI840G
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irfp9140npbf
Abstract: IRF9540N
Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier
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IRFP9140NPbF
-100V
O-247
IRF9540N
-470A/
O-247AC
IRFPE30
irfp9140npbf
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transistor IRF 610
Abstract: transistor irf 647 TO-220aB 11A TO-220aB DIODE 11A
Text: PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFB11N50APbF
O-220AB
O-220AB
transistor IRF 610
transistor irf 647
TO-220aB 11A
TO-220aB DIODE 11A
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IRFB11N50A
Abstract: IRFIB7N50A
Text: PD - 91810 IRFIB7N50A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement
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IRFIB7N50A
O-220
IRFB11N50A
IRFIB7N50A
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IRLZ24N
Abstract: IRF1010 E DATASHEET 668 8e IRF1010 irf1010 MOSFET
Text: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier
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91357C
IRLZ24N
O-220
O-220-AB.
O-220AB
IRF1010
IRLZ24N
IRF1010 E DATASHEET
668 8e
IRF1010
irf1010 MOSFET
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69mH
Abstract: No abstract text available
Text: SSFP11N40 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 400V Simple Drive Requirement ID25 = 11A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP11N40
00A/s
ISD11A
di/dt120A/S
TJ150
width300S;
69mH
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ISD14A
Abstract: SSFP15N25
Text: SSFP15N25 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 250V Simple Drive Requirement ID25 = 15A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP15N25
00A/s
ISD14A
di/dt250A/S
width300S;
SSFP15N25
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1RF9640
Abstract: IRF9640 9422B 422B
Text: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description
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IRF9640
-200V
O-220
T0-220
1RF9640
IRF9640
9422B
422B
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c687
Abstract: C685 0
Text: PD - 9.1357B International IQR Rectifier IRLZ24N HEXFET Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Voss = 55V R DS on ~ 0.06Q
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1357B
IRLZ24N
O-220
C-688
C-689
c687
C685 0
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transistor c257
Abstract: No abstract text available
Text: P D -9.1026 International lüRectifier IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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IRGPF30F
10kHz)
O-247AC
554SE
C-260
D0500S0
transistor c257
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transistor c246
Abstract: transistor c243 C246 C243 transistor IRGBF30F
Text: International l« i Rectifier PD - 9.773 IRGBF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve
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10kHz)
IRGBF30F
O-220AB
TQ-220AB
C-248
transistor c246
transistor c243
C246
C243 transistor
IRGBF30F
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transistor c246
Abstract: transistor c245 c245 transistor
Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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IRGBF30F
10kHz)
O-220AB
C-247
46S5455
TQ-220AB
C-248
transistor c246
transistor c245
c245 transistor
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RLZ24N
Abstract: No abstract text available
Text: PD - 9.1344B International I R Rectifier IRLIZ24N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRM S © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 55V RoS on = 0 . 06Q .
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1344B
IRLIZ24N
O-220
C-583
C-584
RLZ24N
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Untitled
Abstract: No abstract text available
Text: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V
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IRLZ24N
4A55452
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