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    M2W MARKING Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    M2W MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode m2w

    Abstract: marking M2w m2w marking
    Text: MA111 Schottky Barrier Diodes SBD MA10700 Silicon epitaxial planer type Unit : mm For high-frequency rectification 2.1±0.1 0.425 • Features ● Fast trr (reverse recovery time), optimum for high-frequency rectifica- tion +0.1 0.3–0 IF(AV)= 500mA rectification possible


    Original     		PDF MA111 MA10700 500mA diode m2w marking M2w m2w marking

    diode m2w

    Abstract: marking M2w m2w marking
    Text: MA111 Schottky Barrier Diodes SBD MA720 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Fast trr (reverse recovery time), optimum for high-frequency rectifica-


    Original     		PDF MA111 MA720 500mA diode m2w marking M2w m2w marking

    MARKING SAS 05

    Abstract: marking M2w
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 5° • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit


    Original     		PDF MA3J700 MA10700) MARKING SAS 05 marking M2w

    diode m2w

    Abstract: marking M2w MA3J700 m2w marking
    Text: Schottky Barrier Diodes SBD MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition


    Original     		PDF MA3J700 diode m2w marking M2w MA3J700 m2w marking

    m2w marking

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 10° Unit 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current


    Original     		PDF MA3X720 MA720) m2w marking

    marking m2w

    Abstract: m2w marking MA3X720 MA720
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is


    Original     		PDF 2002/95/EC) MA3X720 MA720) SKH00079EED marking m2w m2w marking MA3X720 MA720

    MA10700

    Abstract: MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time trr


    Original     		PDF MA3J700 MA10700) MA10700 MA3J700

    Sine Wave Generator

    Abstract: t 06 marking 59 diodes ir MARKING 103 MA3X720 MA720
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short


    Original     		PDF MA3X720 MA720) Sine Wave Generator t 06 marking 59 diodes ir MARKING 103 MA3X720 MA720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J700 MA10700)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short


    Original     		PDF MA3X720 MA720)

    MA10700

    Abstract: MA3J700 m2w marking marking M2w
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J700 MA10700) MA10700 MA3J700 m2w marking marking M2w

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short


    Original     		PDF MA3X720 MA720)

    diode m2w

    Abstract: MA10700 MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition


    Original     		PDF MA3J700 MA10700) diode m2w MA10700 MA3J700

    MA10700

    Abstract: MA3J700
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1


    Original     		PDF 2002/95/EC) MA3J700 MA10700) MA10700 MA3J700

    MA3X720

    Abstract: MA720 m2w marking marking M2w
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) MA3X720 MA720) MA3X720 MA720 m2w marking marking M2w

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is


    Original     		PDF 2002/95/EC) MA3X720 MA720)

    MA3X720

    Abstract: MA720
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 10˚ Unit 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current


    Original     		PDF MA3X720 MA720) SC-59 MA3X720 MA720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original     		PDF 2002/95/EC) MA3J700 MA10700)

    MA3X720

    Abstract: MA720
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) MA3X720 MA720) MA3X720 MA720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl


    Original     		PDF 2002/95/EC) MA3X720 MA720)

    cd1517

    Abstract: marking M2w
    Text: 12 7 15 14 HKP-14M2W 15 18 co 16 HKP-16M2W ( ) 17 no co no co CD ^ r OO CD CD o CD no CD CO CD CO CO CO (J1 CD CO no ^ r LO co co 30 HKP-30M2W ( ) CD LO 32 HKP-32M2W ( ) 38.1 38 7 41 24 36 HKP-36M2W ( ) 43 18 co co CD 46 32 8 44 HKP-44M2W ( ) 53 34 46 HKP-46M2W ( )


    OCR Scan     		PDF HKP--10M2W HKP-12M2W HKP-14M2W HKP-16M2W HKP-18M2W HKP-20M2W HKP-22M2W HKP-24M2W HKP-26M2W HKP-28M2W cd1517 marking M2w

    m2w marking

    Abstract: marking M2w
    Text: 5 CD CO 8 8 HKP-8M2W 7 CVJ CD 32 HKP-32M2W ( ) 38.1 co co CD 51 4 42 HKP-42M2W ( ) 8 co LO 44 HKP-44M2W ( ) 53 34 CD LO 46 HKP-46M2W ( ) co LO CD CO 45 CVJ 48 HKP-48M2W ( ) 50 HKP-50M2W ( ) 94 64.1 52 HKP-52M2W ( ) 63 5 CD CD 64 54 HKP-54M2W ( ) 04 CD


    OCR Scan     		PDF HKP--10M2W HKP-12M2W HKP-14M2W HKP-16M2W HKP-18M2W HKP-20M2W HKP-22M2W HKP-24M2W HKP-26M2W HKP-28M2W m2w marking marking M2w