M2A transistor
Abstract: M2A MARKING SOT-23 sot23 m2a SBT42 SBT92 M2A SOT23
Text: SBT92 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 Ordering Information Type NO. Marking SBT92 Package Code
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SBT92
-300V
SBT42
OT-23
KST-2041-002
-30mA
-20mA,
M2A transistor
M2A MARKING SOT-23
sot23 m2a
SBT42
SBT92
M2A SOT23
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M2A transistor
Abstract: K 2078 SBT42F SBT92 SBT92F
Text: SBT92F Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F Ordering Information Type NO. Marking SBT92F Package Code
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SBT92F
SBT92
-300V
SBT42F
OT-23F
KST-2078-000
-30mA
-20mA,
M2A transistor
K 2078
SBT42F
SBT92
SBT92F
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M2A transistor
Abstract: No abstract text available
Text: SBT92 PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42 2 SOT-23 Ordering Information Type NO. Marking
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SBT92
-300V
SBT42
OT-23
KSD-T5C063-001
M2A transistor
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2SK125
Abstract: m2a marking
Text: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4
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2SK1259
MA122
2SK125
m2a marking
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M2A transistor
Abstract: No abstract text available
Text: MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • MECHANICAL DATA • Case: SOT-323, Plastic
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MMBT2222AW
600mA
OT-323,
MIL-STD-750,
2010-REV
M2A transistor
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Untitled
Abstract: No abstract text available
Text: SBT92F PNP Silicon Transistor Descriptions PIN Connection • High voltage application • Telephone application 3 Features 1 • Collector-Emitter voltage : VCEO=SBT92 : -300V • Complementary pair with SBT42F 2 SOT-23F Ordering Information Type NO. SBT92F
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SBT92F
SBT92
-300V
SBT42F
OT-23F
KSD-T5C089-000
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SMD M2A
Abstract: SMD M2A transistor national semiconductor marking convention EIA-485/EIA smd 1034 smd marking zh transistor smd ZH DS96F173 DS96F175 EIA-485
Text: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved
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DS96F173M/DS96F175C/DS96F175M
EIA-485/EIA-422
DS96F173
DS96F175
EIA-485
SMD M2A
SMD M2A transistor
national semiconductor marking convention
EIA-485/EIA
smd 1034
smd marking zh
transistor smd ZH
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AC163
Abstract: SMD M2A SMD M2A transistor 54AC163 54ACT163 54ACT163DMQB 54ACT163LMQB 5962-9172301M2A 5962-9172301MEA m2a marking
Text: National P/N 54ACT163 - 4-Bit Binary Counter, Synchronous Reset Products > Military/Aerospace > Logic > FACT ACT > 54ACT163 54ACT163 Product Folder 4-Bit Binary Counter, Synchronous Reset General Description Features Package & Models Datasheet Samples & Pricing
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54ACT163
54ACT163
54AC163
MN54ACT163-X
MV54ACT163-X
12-Nov-98
AC163
SMD M2A
SMD M2A transistor
54ACT163DMQB
54ACT163LMQB
5962-9172301M2A
5962-9172301MEA
m2a marking
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MA6X122
Abstract: No abstract text available
Text: Switching Diodes MA6X122 Silicon epitaxial planar type Unit : mm For switching circuit + 0.2 2.8 − 0.3 + 0.25 Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V current*1 4 3 IF 100 mA IFM 225 mA Non-repetitive peak forward surge current*1,2
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MA6X122
MA6X122
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SMD M2A transistor
Abstract: 54AC169 54AC169DMQB 54AC169LMQB 54ACT169 5962-9160301M2A 5962-9160301MEA
Text: National P/N 54AC169 - 4-Stage Synchronous Bidirectional Counter Products > Military/Aerospace > Logic > FACT AC > 54AC169 54AC169 Product Folder 4-Stage Synchronous Bidirectional Counter General Description Features Datasheet Package & Models Samples & Pricing
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54AC169
54AC169
54ACT169
MN54AC169-X
MV54AC169-X
6-Aug-98
SMD M2A transistor
54AC169DMQB
54AC169LMQB
5962-9160301M2A
5962-9160301MEA
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SMD M2A
Abstract: national semiconductor marking convention smd 1034 SMD M2A transistor DS96F173 DS96F175 EIA-485
Text: DS96F173C/DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The
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DS96F173C/DS96F173M/DS96F175C/DS96F175M
EIA-485/EIA-422
DS96F173
DS96F175
EIA-485
SMD M2A
national semiconductor marking convention
smd 1034
SMD M2A transistor
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SMD M2A
Abstract: DS96F175 applicaTION NOTE SMD M2A transistor DS96F173 DS96F175 EIA-485 MC3486 application
Text: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The
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DS96F173M/DS96F175C/DS96F175M
EIA-485/EIA-422
DS96F173
DS96F175
EIA-485
SMD M2A
DS96F175 applicaTION NOTE
SMD M2A transistor
MC3486 application
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SMD M2A transistor
Abstract: DS96F173 DS96F175 EIA-485
Text: General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The use of LFAST technology allows the DS96F173 and
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DS96F173
DS96F175
EIA-485
ds009627
SMD M2A transistor
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MARKING R7 SOT-363
Abstract: No abstract text available
Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable
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MMDT2222A
2N2222A
OT-363
SC70-6L)
MMDT2222A
T/R13
MARKING R7 SOT-363
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MA4SD10
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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2002/95/EC)
MA4SD10
MA4SD10
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MA4SD10
Abstract: m2a marking
Text: Schottky Barrier Diodes SBD MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density mounting Low forward voltage VF
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MA4SD10
MA4SD10
m2a marking
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M2A transistor
Abstract: 2N2222A MMDT2222A SC70-6L
Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable
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MMDT2222A
2N2222A
OT-363
SC70-6L)
2002/95/EC
MMDT2222A
T/R13
M2A transistor
SC70-6L
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M2A transistor
Abstract: 2N2222A MMDT2222A SC70-6L 2N2222A npn transistor
Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable
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MMDT2222A
2N2222A
OT-363
SC70-6L)
MMDT2222A
T/R13
M2A transistor
SC70-6L
2N2222A npn transistor
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Untitled
Abstract: No abstract text available
Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable
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MMDT2222A
2N2222A
OT-363
SC70-6L)
2002/95/EC
MMDT2222A
T/R13
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Untitled
Abstract: No abstract text available
Text: MMDT2222A DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N2222A NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultra-small SOT-363 SC70-6L package. This device is ideal for portable
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MMDT2222A
2N2222A
OT-363
SC70-6L)
2002/95/EC
MMDT2222A
T/R13
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96F175
Abstract: DS96F175CJ
Text: DS96F173M/DS96F175C/DS96F175M EIA-485/EIA-422 Quad Differential Receivers General Description Features The DS96F173 and the DS96F175 are high speed quad differential line receivers designed to meet the EIA-485 standard. The DS96F173 and the DS96F175 offer improved performance due to the use of L-FAST bipolar technology. The
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DS96F173M/DS96F175C/DS96F175M
EIA-485/EIA-422
DS96F173
DS96F175
EIA-485
96F175
DS96F175CJ
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4SD10 Silicon epitaxial planar type For super-high-speed switching circuits Unit: mm 1.6±0.05 1.0±0.05 • Features Two isolated elements are contained in one package, allowing high-density
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2002/95/EC)
MA4SD10
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SMD M2A transistor
Abstract: 6 pin TRANSISTOR SMD CODE XI TRANSISTOR SMD MARKING CODE M2A K TRANSISTOR SMD MARKING CODE T04 TRANSISTOR SMD MARKING CODE XI SMD M2A pnp transistor transistor SMD t04 TRANSISTOR SMD MARKING CODE KE sla 6102 transistor SMD t15
Text: SIEMENS fl23SbOS OOTbbOl 5 -V L ow -D ro p Fixed V oltage Regulator M2a T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection
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23SbOS
Q67000-A9190
Q67006-A9173
Q67006-A9288
P-DSO-14-4
Q67006-A9192
35x45Â
P-DSO-20-6
ffl52l20x
SMD M2A transistor
6 pin TRANSISTOR SMD CODE XI
TRANSISTOR SMD MARKING CODE M2A
K TRANSISTOR SMD MARKING CODE T04
TRANSISTOR SMD MARKING CODE XI
SMD M2A pnp transistor
transistor SMD t04
TRANSISTOR SMD MARKING CODE KE
sla 6102
transistor SMD t15
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SLD302WT
Abstract: SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3
Text: SLD302WT SONY 200mW High Power Laser Diode_ |For the availability of this product, please contact the sales office^ Description SLD302W T is a gain-guided, high-power laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip
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SLD302WT
200mW
SLD302WT
180mW
SLD302WT-1
SLD302WT-2
SLD302WT-21
SLD302WT-3
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