m27c56

Abstract: M27C516
Contextual Info: [ Z J SGS-THOMSON M27C516 CMOS 512K 32K x 16 UV EPROM and OTP ROM • FAST ACCESS TIME: 120ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 200|xA ■ PROGRAMMING VOLTAGE: 12.75V

M27C516

Contextual Info: 7TETE3? üü37Sflb ‘ì'ìfl • S 6 T H T - £/ ê ~ ’ I S ' Z <3l SEE » S G S -1H 0M S 0N S G S-THOMSON ELI M27C516 CMOS 512K 32K x 16 UV EPROM and OTP ROM FAST ACCESS TIME: 120ns COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION:

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512K 32K x 16 OTP EPROM PRODUCT PREVIEW FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 3sec.

AN-620

Abstract: M27C516 PLCC44 Q0-Q15
Contextual Info: M27C516 512 Kbit 32Kb x16 OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Stand-by Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100µs/word

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: S G S -T H O M S O N M27C516 iiLiisinsMQes 512Kb 32K x 16 OTP EPROM • 5 V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 35ns ■ WORD-WIDE CONFIGURABLE ■ LOW POWER CONSUMPTION: - Active Current 30mA - Stand-by Current 100|j,A ■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

Contextual Info: Æ T SGS-THOMSON ^7#» M27C516 KtlD S S lilLl(gTO(S)li!!ID(Êi 512K (32K x 16) OTP EPROM PRODUCT PREVIEW • FAST ACCESS TIME: 55ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ■ ELECTRONIC SIGNATURE for AUTOMATED

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512 Kbit 32Kb x16 OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Stand-by Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/word (typical)

Contextual Info: M27C516 512 Kbit 32Kb x16 OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: - Active Current 30mA at 5MHz - Stand-by Current 100|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: lOO^is/word (typical)

Contextual Info: SGS-THOMSON M27C516 mo 512K 32K x 16 CMOS UV EPROM-OTP ROM PR ELIM IN A R Y DATA • DESIGNED FOR 16 BIT / 32 BIT SYSTEMS. ■ VERY FAST ACCESS TIME : 100ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION :

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512 Kbit 32Kb x 16 OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns WORD-WIDE CONFIGURABLE LOW POWER CONSUMPTION: – Active Current 30mA – Stand-by Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME of AROUND 3sec.

Contextual Info: / = 7 SCS-THOMSON ^ 7 # M iM iŒ ( i* ( Q M M27C516 ( g § CMOS 512K (32K x 16 UV EPROM and OTP ROM • FAST ACC ESS TIME: 120ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZERO W AIT STATE ■ LOW POWER “CM O S” CONSUMPTION: - Active Current 30mA

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512 Kbit 32Kb x16 OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Stand-by Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100µs/word

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512 Kbit 32Kb x16 OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Stand-by Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/word (typical)

Contextual Info: £ ÿ j SGS-THOMSON DM iraTTMDtgi M27C516 512Kb 32K x 16) OTP EPROM • 5 V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 35ns ■ WORD-WIDE CONFIGURABLE ■ LOW POWER CONSUMPTION: - Active Current 30mA - Stand-by Current 100|j,A ■ PROGRAMMING VOLTAGE:12.5V ± 0.25V

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512Kb 32K x 16 OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns WORD-WIDE CONFIGURABLE LOW POWER CONSUMPTION: – Active Current 30mA – Stand-by Current 100µA PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME of AROUND 3sec.

M27C516

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C516 512 Kbit 32Kb x16 OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 30mA at 5MHz – Stand-by Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100µs/word

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

ST10F166

Abstract: ST10R166 ST10 ST10166 pec 820 st10 Bootstrap
Contextual Info: ST10F166 FAMILY 16-BIT MCU USER MANUAL 2ND EDITION FEBRUARY 1996 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

PLCC32

Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

GL 6201

Abstract: PLCC32 M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.