M23C512
Abstract: No abstract text available
Text: * > !/• SGS-THOMSON M23C512 l]0 g (O i[LŒ(g^(Q)iD(gi CMOS 512K (64K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE * STATIC OPERATION ■ CHIP ENABLE ACTIVE LEVEL MASK PRO
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M23C512
100ns
M23C512
100ns
PDIP28
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON ^7# M23C512 M M 5 IILi(O T (Q K !]D i CMOS 512K (64K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40m A Max - Standby Current 2 0|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION
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M23C512
100ns
M23C512
PDIP28
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M23C512
Abstract: No abstract text available
Text: SGS-THOMSON M23C512 512K 64K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 40mA Max _ Stand by current 20(iA Max ■ SINGLE +5V ± 10% POWER SUPPLY. ■ STATIC OPERATION.
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M23C512
M23C512
M23C512B1
PDIP28
28-PIN
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EPROM
Abstract: M87C512 m27c256 UV EPROM ET2716
Text: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .
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M/ET2716
M2732A
M2764A
M27128A
M27256
M27512
TS27C64A
M27HC641
M27C256B
M87C257
EPROM
M87C512
m27c256
UV EPROM
ET2716
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sgs thomson
Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Text: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns
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M27512
M27256
M27128A
M2764A
M2732A
M2716
64x16
128x8
128x16
sgs thomson
FDIP24
M87C512
eprom rom 512k x 16 bits
M27C512 SGS-THOMSON
capacity of EPROM
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