AT070
Abstract: M2019 m2023 switch M2012 M2013 M2015 M2018 M2012 6A 125V SP-M20-24
Text: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.
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M2013
Abstract: M2012 6A 125V M2012 M2015 M2018 M2019 M2022 m2023 switch M2019 6A 125V
Text: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.
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Untitled
Abstract: No abstract text available
Text: Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series M Miniature Rockers General Specifications B Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits
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M2022TJW01-FC-4A-CF
AT2107
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MARK B83
Abstract: M2026 M2012 6A 125V
Text: Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series M Miniature Rockers General Specifications B Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits
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M2022TJW01-FC-4A-CF
M2012TJW01-FC-3A-CF
MARK B83
M2026
M2012 6A 125V
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Untitled
Abstract: No abstract text available
Text: Miniature Rockers General Specifications Electrical Capacity Resistive Load Power Level (silver): Logic Level (gold): Logic/Power Level (gold over silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits 0.4VA maximum @ 28V AC/DC maximum
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M2022TJW01-FC-4A-CF
AT2107
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spw 068
Abstract: MP 1009 es IT8513 CLEVO L390T IT8513E power supply spw 068 SPW 078 adp 65 jh ac adapter schematic inverter wait
Text: Preface LCD Computer L390T Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They
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L390T
spw 068
MP 1009 es
IT8513
CLEVO
IT8513E
power supply spw 068
SPW 078
adp 65 jh ac adapter schematic
inverter wait
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EL2012
Abstract: 2SC101 M2012 resistor elantec el2012 p0028c M2012 NPN Transistor isolated T0-220
Text: EL2012 F eatu res G eneral D escrip tion • 80 M Hz bandw idth w ith 50il load • 250 mA output current • Gain = 0.999 4- with 50ft load • VOS ± 4 m V • Short circuit protected • Power package w ith isolated metal tab The EL2012 is a high speed bipolar monolithic buffer designed
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EL2012
M2012
EL2012
2SC101
M2012 resistor
elantec el2012
p0028c
NPN Transistor isolated T0-220
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Untitled
Abstract: No abstract text available
Text: EL2012 5 AE D é ia n ie t H B H PERFORMANCE ANAUQG INTEGRATED CtRCtttTS Features • 80 MHz bandwidth with 50fl load • 250 mA output current • Gain = 0.999 + with 500 load • V 0s ± 4m V • Short circuit protected • Power package with isolated metal tab
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EL2012
EL2012CT
O-220
MDP0028
T0-220
0D02Mfl0
EL2012
M2012
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883ct
Abstract: No abstract text available
Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through
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HC6167
1x1014cnvz
1x109
1x101
1x10-®
20-pin
883ct
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honeywell mram
Abstract: No abstract text available
Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out
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0D00fl4D
1x106
1x1014N/cm2
1x101
1x106rad
honeywell mram
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Untitled
Abstract: No abstract text available
Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible
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HM3500R,
HVM10000R
to172
148-Pin
244-Pin
M2010,
M2023
M1008,
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Untitled
Abstract: No abstract text available
Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power
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HC6216
1x1014cnr2
1x109
1x101
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Untitled
Abstract: No abstract text available
Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02
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HC6116--TTL
1x10u
1x109
1x101
86A-6/88
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HC6264
Abstract: No abstract text available
Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical
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HC6264
1x101
1x109
36-pin
HC6264
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Untitled
Abstract: No abstract text available
Text: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02
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HC6856
1x106
1x101
1x109
256Kx
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Untitled
Abstract: No abstract text available
Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as
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1x106
1x1014cm
HC685
IL-l-38535
1x109
1x101
36-Lead
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x-ray cmos
Abstract: No abstract text available
Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator
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1x10s
1x101
PIN23
HX6464/1
HX6464/2
HX6464/3
x-ray cmos
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KD 2.d smd transistor
Abstract: No abstract text available
Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V
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1x106
1x1014cm
1x109
1x101
HC6856
MIL-l-38535
36-Lead
KD 2.d smd transistor
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Untitled
Abstract: No abstract text available
Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)
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HC6364
1x106
1x1014cm
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