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    M2011 BOND PULL Search Results

    M2011 BOND PULL Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    M2011 BOND PULL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IDT82V1671AJ

    Abstract: EME-G700 G700LX EME-G770 Ablebond 8361 JESD22-B116 IDT7025S35JI ablestik 8390 CRM1076 JESD22-B100-b
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0601-01 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 21-Mar-2006 MEANS OF DISTINGUISHING CHANGED DEVICES:


    Original     		PDF 21-Mar-2006 19-Jun-2006 IDTCV169NLG IDTCV170PAG IDTCV171NLG IDTCV174PAG IDTCV175PAG IDTNW1506AL IDTQS3VH16210PA IDTQS3VH16210PAG IDT82V1671AJ EME-G700 G700LX EME-G770 Ablebond 8361 JESD22-B116 IDT7025S35JI ablestik 8390 CRM1076 JESD22-B100-b

    ics633m

    Abstract: ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0607-06 DATE: 29-Sep-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: PLCC, SOIC 150 mil/300 mil (Standard Package)


    Original     		PDF 29-Sep-2006 mil/300 29-Dec-2006 CHANGK3727S MPC962305D-1H MK2059-01SI MK3732-10S MPC962308D-1 MK2302S-01 MK3732-17S ics633m ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M

    Sumitomo EME-G600 material

    Abstract: Ablestik 8290 Ablecube EME-G600 thermal conductivity ablebond 8290 ablestik 8390 Ablebond 84-1*SR4 EME-G600 Ablebond 8390 Ablebond 84-1LMISR4
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0401-01 DATE: 1/20/2004 Product Affected: SOIC package family (see attachment for affected part #s). Date Effective: 4/20/2004 Contact: Geoffrey Cortes


    Original     		PDF

    UM7410

    Abstract: T9527 ATT2C15 M-2014 ATT2C08 A88al 409at q953 899 CLEAN N ETCH ATT2C12
    Text: Manual October 1997 Field-Programmable Gate Arrays FPGA Qualification Manual Lucent Technologies’ Quality Policy Lucent Technologies is committed to achieving sustained business excellence by integrating quality principles and methods into all we do at every level of


    Original     		PDF MN97-016FPGA DA96-005FPGA) UM7410 T9527 ATT2C15 M-2014 ATT2C08 A88al 409at q953 899 CLEAN N ETCH ATT2C12

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    honeywell mram

    Abstract: No abstract text available
    Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out


    OCR Scan     		PDF 0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram

    DTL RTL

    Abstract: schottky transistor spice
    Text: HONEYÜIELL/S S E C 3ÔE D WS 4 5 5 1 0 7 2 ÜÜOOb53 h B H 0 N 3 DEVICE ARRAYS FOR OBSOLETE PART REPLACEMENT BDA/TGA FEATURES • Exact Electrical and Physical Form, Fit and Function Replacement Capability for RTL, DTL, and TTL Circuits • Tile Architecture Extends To Dual and Quad Circuits


    OCR Scan     		PDF OOb53 MIL-STD-883C DTL RTL schottky transistor spice

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    883ct

    Abstract: No abstract text available
    Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through


    OCR Scan     		PDF HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power


    OCR Scan     		PDF HC6216 1x1014cnr2 1x109 1x101

    HX6856

    Abstract: x-ray cmos HX6856/2
    Text: • I K U Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SGI HX6856 FEATURES OTHER RADIATION Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |nm Process • Read/Write Cycle Times < 2 5 ns (-55 to125°C ) Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		PDF 1x106 1x101 to125 256Kx1 HX6856 36-Lead 28-Lead HX6856 x-ray cmos HX6856/2

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


    OCR Scan     		PDF 1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor

    x-ray cmos

    Abstract: No abstract text available
    Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator


    OCR Scan     		PDF 1x10s 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 x-ray cmos

    pepi cr

    Abstract: No abstract text available
    Text: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical


    OCR Scan     		PDF MS51fl 1x106 1x101 1x109 PIN23 pepi cr

    HC6264

    Abstract: No abstract text available
    Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical


    OCR Scan     		PDF HC6264 1x101 1x109 36-pin HC6264

    chip diagram of ram chip 6116

    Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz


    OCR Scan     		PDF HC6116â 1x10ucrrr2 1x109 1x1012 chip diagram of ram chip 6116 m2011 bond pull M2019 M2010 M2011 S102 marking RAD