M2009 Search Results

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Rochester Electronics LLC CM2009-00QR TVS DEVICE DIODE ARRAY 6V 16QSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CM2009-00QR	Bulk	258,314		833	1 - 10 - 100 - 1000 $0.36 10000 $0.36	Buy Now
JRH Electronics 380US060XM2009G3 CONN BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	380US060XM2009G3	Bulk	129		1	1 $2385.4 10 $2385.4 100 $2385.4 1000 $2385.4 10000 $2385.4	Buy Now
Samtec Inc SEAM-20-09.0-S-08-2-A-K-TR CONN HD ARRAY PLUG 160P SMD GOLD Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SEAM-20-09.0-S-08-2-A-K-TR	Reel	125		125	1 - 10 - 100 - 1000 $17.83752 10000 $17.83752	Buy Now
	SEAM-20-09.0-S-08-2-A-K-TR	Cut Tape	24		1	1 $26.69 10 $25.517 100 $22.762 1000 $22.762 10000 $22.762	Buy Now
Avnet Abacus	SEAM-20-09.0-S-08-2-A-K-TR	Reel		7 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc SEAM-20-09.0-S-06-2-A-K-TR CONN HD ARRAY PLUG 120P SMD GOLD Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SEAM-20-09.0-S-06-2-A-K-TR	Cut Tape	100		1	1 $20.92 10 $20.01 100 $17.85 1000 $17.85 10000 $17.85	Buy Now
Mouser Electronics	SEAM-20-09.0-S-06-2-A-K-TR		91			1 $20.92 10 $20.01 100 $17.85 1000 $11.16 10000 $11.16	Buy Now
Avnet Abacus	SEAM-20-09.0-S-06-2-A-K-TR	Reel		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	SEAM-20-09.0-S-06-2-A-K-TR					1 - 10 - 100 $18.65 1000 $10.07 10000 $9.8	Buy Now
Sager	SEAM-20-09.0-S-06-2-A-K-TR				1	1 $20.92 10 $20.01 100 $15.33 1000 $13.04 10000 $13.04	Buy Now
JRH Electronics 712FS839M2009 CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	712FS839M2009	Bulk	81		1	1 $3440.95 10 $2924.807 100 $2408.6643 1000 $2408.6643 10000 $2408.6643	Buy Now

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M2009 Datasheets (3)

Part	Manufacturer	Description	Type	PDF
M20-095030W1045	Harwin	Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - HEADER	Original	PDF
M2009DIE	Mindspeed Technologies	Amplifier, Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622Mbps	Original	PDF
M2009DIEW	Mindspeed Technologies	Amplifier, Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622Mbps	Original	PDF

M2009 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ics633m Abstract: ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0607-06 DATE: 29-Sep-2006 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: PLCC, SOIC 150 mil/300 mil (Standard Package)	Original	PDF	29-Sep-2006 mil/300 29-Dec-2006 CHANGK3727S MPC962305D-1H MK2059-01SI MK3732-10S MPC962308D-1 MK2302S-01 MK3732-17S ics633m ICS9112BM-17 EME-G700 EME-G600 ICS9155C-02CW20 ICS9170-01CS08 ics5342-3 EMEG700 qmi519 ICS405M
Mil-Std-883 Wire Bond Pull Method 2011 Abstract: marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes Text: Quality/Reliability Fairchild Semiconductor’s Commitment to Customers The company has embraced the Total Quality Management TQM concept for continuously improving its products and services. Infant Mortality Failure Rate Fairchild Semiconductor is dedicated to providing innovative	Original	PDF	65-QR01 14-lead, 16-lead, 10-lead, O-100 24-lead, Mil-Std-883 Wire Bond Pull Method 2011 marking codes fairchild M1014C C6550 A101 A102 ultrasonic m2010 SCD 2028 10-30X Fairchild Lot codes
KC800 Abstract: KC700 KC-320 KC-700 54fct162245ateb A0910-02 6116SA120DB 5962-8866201XA 54FCT162244ATEB M1014 Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 PRODUCT/PROCESS CHANGE NOTICE PCN 15-Apr-2010 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: A0910-02 DATE: Product Affected: Cerdip 300 mil, Cerdip 600 mil Product Mark	Original	PDF	15-Apr-2010 A0910-02 15-Jul-2010 0/100deg 1000cys. -65/150deg 85deg KC800 KC700 KC-320 KC-700 54fct162245ateb A0910-02 6116SA120DB 5962-8866201XA 54FCT162244ATEB M1014
M02009 Abstract: photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER Text: M02009 Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-C 6/03 Information provided in this Data Sheet is subject to change without notice. Mindspeed Technologies , Inc, Proprietary and Confidential M02009	Original	PDF	M02009 02009-DSH-001-C M02009 photodiode preamplifier AGC M2009DIE M2009DIEW MC2009 photodiode die WAFER
100ka fuse Abstract: T216976 fuses K2194 Z211783 R222678 100KA E202864 E223196 A120X101 Text: Semiconductor A (AC)fuses Semiconductor fuses American Round Fuses Form 101 Range A120X Semiconductor Protection Fuses A120X Amp-trap Form 101 Semiconductor Protection fuses, rated 1/2A through 30A, 1200VAC are popular for use in traction drive auxiliary circuits and similar applications.	Original	PDF	A120X A120X 1200VAC 1000VDC 1/2-30A 1200VAC, 100kA 1000VDC, 100ka fuse T216976 fuses K2194 Z211783 R222678 E202864 E223196 A120X101
LINDNER fuses Abstract: e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c Text: Fuses – Fusegear Semiconductor Protection Fuses • Protistor Mapping 70 - 71 • American Round Fuses - Form 101 range 72 - 81 • Other American Round Fuses 82 • Ferrule-style Protistor fuses 83 - 87 • Protistor DIN standard fuses sizes 000-00 88 - 89	Original	PDF	A218707K Y211023K F215124K P219226K Z211024K MSD823I MSD10251I MSD831I MSD1031I MSD1038I LINDNER fuses e230073 LINDNER fuses neozed c2165 FR10GB69V30 FR14UC69V50 FR10GB69V12.5 M0816 Y300056 n300093c
Untitled Abstract: No abstract text available Text: Pin Pre-amplifier with AGC for 3.3V Fiber Optic Applications to 622 Mbps Data Sheet 02009-DSH-001-B 5/03 Information provided in this Data Sheet is Preliminary and is subject to change without notice. Mindspeed Technologies, Inc, Proprietary and Confidential	Original	PDF	M02009 02009-DSH-001-B
Untitled Abstract: No abstract text available Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power	OCR Scan	PDF	1x10u 1x109 1x101 1x108
Untitled Abstract: No abstract text available Text: EL2009C EL2009C 90 MHz 1 Ai her F eatu res G eneral D escrip tion • H ig h slew rate— 3000 V / is • W ide bandw idth— 125 M H z @ R L = 50H 90 M H z @ R l = 1 0 ^ • O u tp u t current— 1A continuous • O u tp u t im pedance— l i t • S h o rt circuit protected	OCR Scan	PDF	EL2009C EL2009 EL2009â uniqu71 M2009 159pF
Untitled Abstract: No abstract text available Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as	OCR Scan	PDF	1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead
stm32f100c8 Abstract: LQFP46 STM32F103RC_64 STM32F103RB LOFP48 STM32F1032F STM32F103VF STM32F103re pin LOFP-144 stm32f100cb Text: S T M 3 2 F £ ? ijC o rte x-M 3 S T M 3 2 F ^ 5 i j 3 2 f ô W ^ « f ê l « » X ^ ^ « 1 4 W A R M C o r t e x T“- M 3 A f t , Ä Ä -« ^ Ä « A Ä Ä & o S T M 3 2 F * ^ J * Â » Â T C o r te x -M 3 fc * ;ttJ fc :Â ÎT Ô < J * g ïa :æ , f c îS Â f l- t t t ë M f ô W	OCR Scan	PDF	STM32F3R STMS2F100C4 LCSP64 stm32f100c8 LQFP46 STM32F103RC_64 STM32F103RB LOFP48 STM32F1032F STM32F103VF STM32F103re pin LOFP-144 stm32f100cb
EL2009 Abstract: EL2009C ELLS 110 w s p 1620 transformer EL2009CT QCX0002 high speed op amp voltage booster E2130 MDP0028 Text: hiCH PfRf QHMAMCI? ANA_jîi i NTCG«MTlî , CIPC.,t " EL2009C 90 MHz 1 A m p B u ffer .1 m plifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = SOil 90 M Hz @ Rl = 10il • Output current— 1A continuous	OCR Scan	PDF	EL2009C EL2009CT T0-220 MDP0028 O-220 EL2009 amplifi16 3121S57 EL2009C ELLS 110 w s p 1620 transformer QCX0002 high speed op amp voltage booster E2130 MDP0028
Untitled Abstract: No abstract text available Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 \|xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)	OCR Scan	PDF	HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105
Untitled Abstract: No abstract text available Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 \|im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power	OCR Scan	PDF	HC6216 1x1014cnr2 1x109 1x101

Untitled Abstract: No abstract text available Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02	OCR Scan	PDF	HC6116--TTL 1x10u 1x109 1x101 86A-6/88
HC6264 Abstract: No abstract text available Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical	OCR Scan	PDF	HC6264 1x101 1x109 36-pin HC6264
chip diagram of ram chip 6116 Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 \|xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz	OCR Scan	PDF	HC6116â 1x10ucrrr2 1x109 1x1012 chip diagram of ram chip 6116 m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Untitled Abstract: No abstract text available Text: hiCHPrPiOHMASCEAhOliiNrEGWuiCIFCw'-S EL2009C 90 MHz 1 Amp Buffer Amplifier F e a tu r e s G en era l D e sc r ip tio n • H igh slew rate—3000 V//xs • Wide bandwidth— 125 M Hz @ R l = 50fl 90 M Hz @ R l = 10il • Output current— 1A continuous • Output impedance— i n	OCR Scan	PDF	EL2009C EL2009 EL2009â
Untitled Abstract: No abstract text available Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)	OCR Scan	PDF	HC6364 1x106 1x1014cm
KD 2.d smd transistor Abstract: No abstract text available Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 \|um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V	OCR Scan	PDF	1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor
Untitled Abstract: No abstract text available Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë\| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible	OCR Scan	PDF	HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,
883ct Abstract: No abstract text available Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M \| HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through	OCR Scan	PDF	HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct
honeywell mram Abstract: No abstract text available Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out	OCR Scan	PDF	0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram
x-ray cmos Abstract: No abstract text available Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator	OCR Scan	PDF	1x10s 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 x-ray cmos

M2009 Search Results

M2009 Price and Stock

Rochester Electronics LLC CM2009-00QR

JRH Electronics 380US060XM2009G3

Samtec Inc SEAM-20-09.0-S-08-2-A-K-TR

Samtec Inc SEAM-20-09.0-S-06-2-A-K-TR

JRH Electronics 712FS839M2009

M2009 Datasheets (3)

M2009 Datasheets Context Search

ics633m

Mil-Std-883 Wire Bond Pull Method 2011

KC800

M02009

100ka fuse

LINDNER fuses

Untitled

Untitled

Untitled

Untitled

stm32f100c8

EL2009

Untitled

Untitled

Untitled

HC6264

chip diagram of ram chip 6116

Untitled

Untitled

KD 2.d smd transistor

Untitled

883ct

honeywell mram

x-ray cmos