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    M1L TRANSISTOR Search Results

    M1L TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    M1L TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A720 transistor

    Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
    Text: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.


    OCR Scan     		2N3906 MIL-S-19500/530 MIL-S-19500. MIL-S-19500 5961-A720) A720 transistor transistor A720 4392 ic equivalent 2N3906 350MW PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		2N6851 M1L-S-19500I564 1503C) P-37010-- PDF

    2n6851

    Abstract: No abstract text available
    Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET


    OCR Scan     		2n6851 MIL-S-19500/564 Param2n6851_ P-37010â 2SM735 PDF

    2N2015

    Abstract: marking CF R/NPN/transistor cf 331 2N2016
    Text: M1L-S-19500/248A EL 10 A di-II 1963 SUPERSEDING M IL-S -19500/248(S igC ) 21 June 1962 M ILITARY SPECIFICATION TRANSISTOR, N P N , S ILIC O N TYPES 2N2015, 2N2016 1. SCOPE 1.1 Scope. - This sp e cifica tio n cover* the d eta il requirements fo r si I icon, N P N , transistors


    OCR Scan     		M1L-S-19500/248A 95Q0/248 2N2015, 2N2016 95G0/248A( 2N2015 marking CF R/NPN/transistor cf 331 2N2016 PDF

    m1l SOT-23

    Abstract: M1L marking
    Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon z We declare that the material of product LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


    Original     		AEC-Q101 LMBT6428LT1G LMBT6429LT1G S-LMBT6428LT1G S-LMBT6429LT1G 3000/Tape LMBT6428LT3G 10000/Tape m1l SOT-23 M1L marking PDF

    m1l transistor

    Abstract: m1l SOT-23 M1L marking M1L3 LMBT6428LT1G SOT-23 MARKING D LMBT6429LT3G marking m1l marking M1L sot23 NPN/m1l transistor
    Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G


    Original     		LMBT6428LT1G LMBT6429LT1G 10000/Tape LMBT6429LT3G 3000/Tape LMBT6428LT3G m1l transistor m1l SOT-23 M1L marking M1L3 LMBT6428LT1G SOT-23 MARKING D LMBT6429LT3G marking m1l marking M1L sot23 NPN/m1l transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1 LMBT6429LT1 MAXIMUM RATINGS Rating Symbol Value 6428LT1 6429LT1 Unit Collector–Emitter Voltage V CEO 50 45 Vdc Collector–Base Voltage V CBO 60 55 Vdc Emitter–Base Voltage V 3 1


    Original     		LMBT6428LT1 LMBT6429LT1 6428LT1 6429LT1 236AB) LMBT6428LT1 OT-23 PDF

    m1l SOT-23

    Abstract: marking code transistor m1l MMBT6428LT1G MMBT6429LT1G m1l transistor mmbt6428 marking M1L sot23
    Text: MMBT6428LT1, MMBT6429LT1 Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage VCEO 50 45 Vdc Collector −Base Voltage


    Original     		MMBT6428LT1, MMBT6429LT1 6428LT1 6429LT1 OT-23 O-236) MMBT6428LT1/D m1l SOT-23 marking code transistor m1l MMBT6428LT1G MMBT6429LT1G m1l transistor mmbt6428 marking M1L sot23 PDF

    2AK TRANSISTOR

    Abstract: No abstract text available
    Text: MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage


    Original     		MMBT6428LT1G, MMBT6429LT1G 6428LT1 6429LT1 MMBT6428LT1/D 2AK TRANSISTOR PDF

    marking code transistor m1l

    Abstract: MMBT6429LT1G MMBT6428LT1G MMBT6428 MMBT6428LT1 MMBT6429 MMBT6429LT1
    Text: MMBT6428LT1G, MMBT6429LT1G Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol 6428LT1 6429LT1 Unit Collector −Emitter Voltage


    Original     		MMBT6428LT1G, MMBT6429LT1G 6428LT1 6429LT1 MMBT6428LT1/D marking code transistor m1l MMBT6429LT1G MMBT6428LT1G MMBT6428 MMBT6428LT1 MMBT6429 MMBT6429LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR . .G.R .EE TECHNICAL O .N . . .f*. . .l . . . . .IN . Order this document bv MGSF3442VT1/D DATA .P. Preliminary Information Low rDS on SmaI1-SignaI MOSFETS TMOS Single N-Channel Field Effect Transistors WI Part of the GreenLineTM


    Original     		MGSF3442VT1/D MGSF3442W1 602-2HW9 81-M521 PDF

    marking code transistor m1l

    Abstract: No abstract text available
    Text: MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable


    Original     		MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G AEC-Q101 6428LT1 6429LT1 OT-23 O-236) MMBT6428LT1/D marking code transistor m1l PDF

    12v 100w amplifier

    Abstract: 12v to Amplifier 100w 100w audio amplifier circuit diagram class D IRFZ24N equivalent J2 Q24A B 100w bass circuit 12v 100W regulator IRF9Z34N 100W AUDIO AMPLIFIER 100w mosfet audio amplifier circuit diagram
    Text: ASAHI KASEI [AKD4730-100W] AKD4730-100W AK4730-100W Evaluation Board Rev.4 GENERAL DESCRIPTION The AKD4730-100W is the evaluation board of AK4730, which is one chip modulator built in two channel PWM Modulators and Pre-Drivers of MOSFETs for Class-D Amplifier. It has the interface of the


    Original     		AKD4730-100W] AKD4730-100W AK4730-100W AKD4730-100W AK4730, AKD4730 2200u 12v 100w amplifier 12v to Amplifier 100w 100w audio amplifier circuit diagram class D IRFZ24N equivalent J2 Q24A B 100w bass circuit 12v 100W regulator IRF9Z34N 100W AUDIO AMPLIFIER 100w mosfet audio amplifier circuit diagram PDF

    2N502A

    Abstract: 1026 power trasistor bolometer application 2N502B bolometer
    Text: KIL-S-19500/ll2C EL^ h May 196?_ ^ SUPERSEDING MIL-S-19500/112B( SigC 23 Noveaber 1966 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM TYPES 2N502A AND 2N502B I. SCOPE 1*1 Scope.- Thi* specification cover* the detail requireaents for geraaniua, PNPi transistors T o t particular use as 20G-ME2 aapiirier devices haring a ainiaua


    OCR Scan     		MXL-S-19500/112C MIL-S-19500/L12B( 2N502A 2N502B 200-Mbi 961-A099 1026 power trasistor bolometer application 2N502B bolometer PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY. C X P 5 0 1 1 2 /5 0 1 1 6 1 CMOS 4-bit 1 Chip Microcomputer Description 80 pin QFP Plastic CXP50112/CXP50116 is a CMOS 4-bit micro­ computer which consists of 4-bit CPU, ROM, RAM, I/O port, 8-bit timer, 8-bit timer/counter, 18-bit time base timer, 8-bit serial I/O, vector Interruption, power on


    OCR Scan     		CXP50112/CXP50116 18-bit 32kHz 0G1721D CXP50112 80-P-1420-A 3fl23fl3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.7 V to 16.5 V Hot Swap Controller with Current Sense Output ADM1171 FEATURES GENERAL DESCRIPTION Controls supply rails from 2.7 V to 16.5 V Allows protected board removal and insertion to a live backplane External sense resistor provides adjustable analog current


    Original     		ADM1171 ADM1171 MO-193-BA ADM1171-1AUJZ-RL7 ADM1171-2AUJZ-RL71 D05125-0-7/06 PDF

    556 IC TIMER

    Abstract: ADM1171 ADM1171-1AUJZ-RL7
    Text: 2.7 V to 16.5 V Hot Swap Controller with Current Sense Output ADM1171 FEATURES GENERAL DESCRIPTION Controls supply rails from 2.7 V to 16.5 V Allows protected board removal and insertion to a live backplane External sense resistor provides adjustable analog current


    Original     		ADM1171 ADM1171 MO-193-BA ADM1171-1AUJZ-RL7 ADM1171-2AUJZ-RL71 D05125-0-7/06 556 IC TIMER PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.7 V to 16.5 V Hot Swap Controller with Current Sense Output ADM1171 Data Sheet FEATURES GENERAL DESCRIPTION Controls supply rails from 2.7 V to 16.5 V Allows protected board removal and insertion to a live backplane External sense resistor provides adjustable analog current


    Original     		ADM1171 ADM1171 MO-193-BA ADM1171-1AUJZ-RL7 ADM1171-2AUJZ-RL7 D05125-0-11/13 PDF

    22-RFD036

    Abstract: 100-D180 CONTACTOR 22-RF018-CS 22-RFD323 22C-D030N103 22-RFD150 22C-D072A103 22c-d105a103 series a 22-RFD208 22-RJ45CBL-C20
    Text: Technical Data PowerFlex 400 Adjustable Frequency AC Drives for Fan & Pump Applications Product Description Providing users with easy installation in mechanical fan and pump systems, the Allen-Bradley PowerFlex® 400 AC drive offers a wide range of built-in features allowing for seamless


    Original     		0350HP 480VAC 0-50HP 22C-TD001C-EN-P 22C-TD001B-EN-P 22-RFD036 100-D180 CONTACTOR 22-RF018-CS 22-RFD323 22C-D030N103 22-RFD150 22C-D072A103 22c-d105a103 series a 22-RFD208 22-RJ45CBL-C20 PDF

    Q3500T

    Abstract: Q5000 Q1300T amcc q1300t Q5000T 2SC 930 AF ECL100K ECL10K Q3500 QM1600T
    Text: DEVICE SPECIFICATION Q5000 SERIES ECUTTL LOGIC ARRAYS DESCRIPTION The AM C C Q 5000 Series of logic arrays is co m p rise d of four p ro du cts ranging in d en sity from 1300 to 5000 equivalent gates. The series is optim ized to p rovide high perform ance and proven reliability to to da y's


    OCR Scan     		Q5000 600MHz. 600MHz /D1013-0288 Q3500T Q1300T amcc q1300t Q5000T 2SC 930 AF ECL100K ECL10K Q3500 QM1600T PDF

    HT45FM03B

    Abstract: 018H PC10 PC11 spindle and VCM motor controller bldc electric drive spindle 4TAD 0,50
    Text: HT45FM03B Brushless DC Motor Flash Type 8-Bit MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features · Operating voltage: · Up to 0.2ms instruction cycle with 20MHz system fSYS= 0.4~20MHz: 4.5V~5.5V


    Original     		HT45FM03B HA0075E 20MHz 20MHz: 12-bit 10-bit 16-bit HT45FM03B 018H PC10 PC11 spindle and VCM motor controller bldc electric drive spindle 4TAD 0,50 PDF

    bldc electric drive spindle

    Abstract: 00Fh 018H HT45FM03B PC10 PC11 bldc motor control circuit diagrams M1B10 marking code GBW
    Text: HT45FM03B Brushless DC Motor Flash Type 8-Bit MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features · Operating voltage: · 8-level subroutine nesting fSYS= 0.4~20MHz: 4.5V~5.5V · 8 channel 12-bit resolution A/D converter


    Original     		HT45FM03B HA0075E 20MHz: 12-bit 10-bit 16-bit bldc electric drive spindle 00Fh 018H HT45FM03B PC10 PC11 bldc motor control circuit diagrams M1B10 marking code GBW PDF

    Untitled

    Abstract: No abstract text available
    Text: HT45FM03B Brushless DC Motor Flash Type 8-Bit MCU Technical Document • Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note Features · Operating voltage: · 8-level subroutine nesting fSYS= 0.4~20MHz: 4.5V~5.5V · 8 channel 12-bit resolution A/D converter


    Original     		HT45FM03B HA0075E 20MHz: 12-bit 10-bit 16-bit PDF

    44C892

    Abstract: No abstract text available
    Text: Tem ic M44C092/M44C892 S e m i c o n d u c t o r s 3 3.1 Peripheral Modules primary register. Accessing the auxiliary register is per­ formed with the same instruction preceded by writing the module address into the auxiliary switching module. Byte wide registers are accessed by multiple IN- or OUT-


    OCR Scan     		M44C092/M44C892 24-Jun-97 44C892 PDF