Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel LMBT5550LT3G M1F 10000/Tape&Reel LMBT5551LT1G
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LMBT5550LT1G
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3000/Tape
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10000/Tape
LMBT5551LT3G
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1N914
Abstract: LMBT5550LT1 LMBT5550LT1G LMBT5551LT1 LMBT5551LT1G sot-23 Marking M1F LMBT5551LT
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. LMBT5550LT1 LMBT5551LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1 M1F 3000/Tape&Reel LMBT5550LT1G Pb-Free M1F 3000/Tape&Reel LMBT5551LT1
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LMBT5550LT1
LMBT5551LT1
3000/Tape
LMBT5550LT1G
LMBT5551LT1G
1N914
LMBT5550LT1
LMBT5550LT1G
LMBT5551LT1
LMBT5551LT1G
sot-23 Marking M1F
LMBT5551LT
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LMBT5551LT1G
Abstract: 1N914 LMBT5550LT1G MMBT5550 MMBT5551
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel
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LMBT5550LT1G
LMBT5551LT1G
3000/Tape
LMBT5550LT3G
10000/Tape
LMBT5551LT3G
LMBT5551LT1G
1N914
LMBT5550LT1G
MMBT5550
MMBT5551
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel
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3000/Tape
LMBT5550LT3G
10000/Tape
LMBT5551LT3G
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Untitled
Abstract: No abstract text available
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551
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MMBT5550
MMBT5551
OT-23
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MMBT5551
Abstract: MMBT5551 G1 1N914 MMBT5550
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100 , MMBT5550 MMBT5551
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MMBT5550
MMBT5551
OT-23
MMBT5551
MMBT5551 G1
1N914
MMBT5550
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Untitled
Abstract: No abstract text available
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) 1.0 , MMBT5550 MMBT5551 140 160
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MMBT5550
MMBT5551
OT-23
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MMBT5550
Abstract: MMBT5551 1N914
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER V CEO MMBT5550 140 160 6.0 600 MMBT5551 160 180 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 TA=25 C unless otherwise noted (3) 1.0 , MMBT5550 MMBT5551 140 160 -100
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MMBT5550
MMBT5551
OT-23
MMBT5550
MMBT5551
1N914
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ ƽ We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
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AEC-Q101
LMBT5550LT1G
LMBT5551LT1G
S-LMBT5550LT1G
S-LMBT5551LT1G
3000/Tape
10000/Tape
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5550LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage
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OT-23
OT-23
MMBT5550LT1
MMBT5550LT1
100MHz
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Untitled
Abstract: No abstract text available
Text: Product specification MMBT5550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN Silicon 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25
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MMBT5550
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5550LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM: 0.6
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OT-23
MMBT5550LT1
037TPY
950TPY
550REF
022REF
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MMBT5550
Abstract: No abstract text available
Text: Transistors SMD Type High Voltage Transistors MMBT5550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN Silicon 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector
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MMBT5550
OT-23
MMBT5550
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sot-23 Marking M1F
Abstract: MMBT5550 nt1005 M1F SOT23
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier MMBT5550 FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free APPLICATIONS z High voltage transistors. z General purpose application. SOT-23
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MMBT5550
OT-23
-55to
BL/SSSTC117
sot-23 Marking M1F
MMBT5550
nt1005
M1F SOT23
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MMBT5550-M1F
Abstract: 1N914 MMBT5550
Text: Zowie Technology Corporation High Voltage Transistor NPN Silicon COLLECTOR 3 3 MMBT5550 BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 6.0 Vdc
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MMBT5550
OT-23
MMBT5550-M1F
1N914
MMBT5550
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LMBT5550LT1 LMBT5551LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous
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LMBT5550LT1
LMBT5551LT1
LMBT5550LT1
OT-23
LMBT5550LT1-5/5
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FMBT5550
Abstract: oc 140 npn transistor
Text: Formosa MS High Voltage NPN Epitaxial Planar Transistor FMBT5550 / FMBT5551 List List. 1 Package outline. 2
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FMBT5550
FMBT5551
120sec
260sec
30sec
DS-231108
oc 140 npn transistor
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On semiconductor date Code sot-23
Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage
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MMBT5550LT1,
MMBT5551LT1
MMBT5550
MMBT5551
MMBT5550LT1/D
On semiconductor date Code sot-23
IC data book free download
sot-23 body marking A 4
TO-236
sot-23 Marking G1
Tape and Reel Packaging Specifications
Code sot-23 on semiconductor
1N914 transistor data sheet free download
G1 SOT-23
marking codes transistors a1 sot-23
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sot-23 Marking M1F
Abstract: sot-23 MARKING CODE G1
Text: WILLAS FM120-M+ MMBT555xLT1 THRU High Voltage Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
MMBT555xLTHRU
FM1200-M+
OD-123+
OD-123H
MMBT5550LT1
3000/Tape
MMBT5551LT1
FM120-MH
sot-23 Marking M1F
sot-23 MARKING CODE G1
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A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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1n914 SOD123
Abstract: sot-23 MARKING CODE G1 Sc59
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage
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MMBT5550LT1
MMBT5551LT1*
236AB)
22NOT
1n914 SOD123
sot-23 MARKING CODE G1
Sc59
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Untitled
Abstract: No abstract text available
Text: SynSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5550LT1 TRANSISTOR NPN FEATURES Power dissipation Pcm : 0225 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage 160 V Operating and storage junction temperature range
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OCR Scan
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MMBT5550LT1
OT-23
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PDF
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MMB5551
Abstract: mmt5551 1BT55 MMBT5550 MMBT5551 T5551 MVBT5551
Text: MMBT5550 MMBT5551 High Voltage NPN Transistors E M IT E l M A X IM U M RATINGS Rating Col icdoi bmilitr Voilage Cofadof-Bastì voltage tmiLlûr Uaùü voilage Cül ICOlûr Cufrûril COMLiriutj S Symbol Vali.p V C EO vceo VEBO ic HO L6D 6.0 6DD Unit Vdc Vdc
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OCR Scan
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MMBT5550
MMBT5551
MMBT5550
MMGT5551
MMBT5S50
1BT5550
MMB5551
mmt5551
1BT55
MMBT5551
T5551
MVBT5551
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PDF
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Untitled
Abstract: No abstract text available
Text: M AXIM U M RA TIN G S Symbol Value Unit C o lle cto r-E m itte r Voltage VCEO 140 Vdc Collector-B ase V o ltage VCBO 160 Vdc Em itter-Base Voltage v EBO 6.0 Vdc ic 600 m A dc Symbol Max Unit Pd 225 mW 1.8 m W /X Rb j a 556 °C/W Pd 300 mW 2.4 mW/°C r #j a
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OCR Scan
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MMBT5550LT1
MMBT5551LT1*
BT5550
MMBT5551
OT-23
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