M1B marking
Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
M1B marking
1N914 SOT-23
MMBT2222A
1n914 sot
marking 1p sot23
1P SOT-23
marking code m1b
MMBT2222ALT1G
1p sot
MMBT2222LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
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Original
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LMBT2222LT1G
LMBT2222ALT1G
S-LMBT2222LT1G
S-LMBT2222ALT1G
AEC-Q101
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
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Original
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LMBT2222LT1G
LMBT2222ALT1G
S-LMBT2222LT1G
S-LMBT2222ALT1G
AEC-Q101
OT-23
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PDF
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MMBT2222ALT1G
Abstract: 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1
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Original
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
MMBT2222ALT1G
1P SOT-23
1N914
MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222LT1G
MMBT2222LT3
MMBT2222LT3G
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PDF
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m1b marking
Abstract: MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1
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Original
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
MMBT2222LT1/D
m1b marking
MMBT2222ALT1G
1N914
MMBT2222
MMBT2222A
MMBT2222LT1
MMBT2222LT1G
MMBT2222LT3
MMBT2222LT3G
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PDF
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M1B marking
Abstract: ma4s159
Text: 2SK1259 Switching Diodes MA4S159 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features Small S-Mini type 4-pin package Åú Independent 2.0±0.1 1.3±0.1 ● incorporating of two elements, enabling high-density mounting
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2SK1259
MA4S159
100mA
M1B marking
ma4s159
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M1B marking
Abstract: No abstract text available
Text: 2SK1214 Switching Diodes MA159A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Unit 0.1 to 0.3 VR 80 V Repetitive peak reverse voltage VRRM 80 V
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Original
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2SK1214
MA159A
M1B marking
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PDF
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1P marking
Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO
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Original
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LMBT2222LT1G
LMBT2222ALT1G
3000/Tape
OT-23
1P marking
LMBT2222ALT1G
m1b marking
LMBT2222LT1G
1N914
f250300
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PDF
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MMBT2222LT1G
Abstract: MMBT2222ALT1G m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G 1P SOT-23
Text: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G
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Original
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MMBT2222LT1G,
MMBT2222ALT1G
MMBT2222LT1G
OT-23
MMBT2222LT1/D
MMBT2222LT1G
MMBT2222ALT1G
m1b marking
1N914
MMBT2222
MMBT2222A
MMBT2222ALT3G
MMBT2222LT3G
1P SOT-23
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PDF
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MMBT2222ALT1G
Abstract: MMBT2222LT1G m1b marking 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G on semiconductor marking code 1P
Text: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G
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Original
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MMBT2222LT1G,
MMBT2222ALT1G
MMBT2222LT1G
OT-23
MMBT2222LT1/D
MMBT2222ALT1G
MMBT2222LT1G
m1b marking
1P SOT-23
1N914
MMBT2222
MMBT2222A
MMBT2222ALT3G
MMBT2222LT3G
on semiconductor marking code 1P
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PDF
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marking code m1b
Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Text: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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MMBT2222L,
MMBT2222AL,
SMMBT2222AL
AEC-Q101
OT-23
MMBT2222L
marking code m1b
SMMBT2222ALT1G
SMMBT2222A
MMBT2222LT1-D
MMBT2222AL
on semiconductor marking code 1P
MMBT2222ALT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
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Original
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MMBT2222L,
MMBT2222AL,
SMMBT2222AL
MMBT2222L
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage
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LMBT2222LT1G
LMBT2222ALT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage
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OT-23
MMBT2222LT1
OT-23
150mA
500mA
500mA,
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR NPN SOT–23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
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Original
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OT-23
MMBT2222
o00mA
500mA,
150mA,
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1
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Original
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MMBT2222
OT-23
MMBT2907)
500mA
150mA
150mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT2222LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.6
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Original
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OT-23
MMBT2222LT1
100MHz
037TPY
950TPY
550REF
022REF
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PDF
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MMBT2222
Abstract: M1B marking
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier MMBT2222 FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free APPLICATIONS z Use as a medium power amplifier. z Switching requiring collector currents up to 500mA.
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MMBT2222
500mA.
OT-23
BL/SSSTC091
MMBT2222
M1B marking
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PDF
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m1b marking
Abstract: MA4S159
Text: Switching Diodes MA4S159 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.1 1.3 ± 0.1 • Features Symbol Rating Unit VR 80 V Reverse voltage DC Peak reverse voltage Average forward Single current Double Peak forward
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MA4S159
m1b marking
MA4S159
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PDF
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m1b marking
Abstract: 8130 MA4X159A MARKING M1B
Text: Switching Diodes MA4X159A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05 Reverse voltage DC Repetitive peak reverse voltage Rating Unit VR
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Original
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MA4X159A
m1b marking
8130
MA4X159A
MARKING M1B
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PDF
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Untitled
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA4S713 Silicon epitaxial planer type For switching For wave detection circuit Unit : mm 2.1±0.1 1.25±0.1 ● Small S-Mini 4-pin package ● Independent two-element incorporated, enabling high density mount- 2.0±0.1 1.3±0.1
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MA111
MA4S713
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PDF
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m1b marking
Abstract: EE-SX1031
Text: Photomicrosensor EE-SX1031 Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • Dual channel model with 3.4 mm wide slot. • High resolution with a 0.5-mm-wide aperture. • Separate LED/Phototransistor combinations within a single
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EE-SX1031
m1b marking
EE-SX1031
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23
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OCR Scan
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10kii
10kii)
Q62702-C2385
OT-23
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PDF
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P-SOT89-4-1
Abstract: max 32321 ic MARKING J LA tic 41 P-SOT-323 GPS05557 marking 253
Text: Package Outlines SIEM ENS Plastic Package, P-DIP-20-1 P la s tic D ual In -L in e P a cka g e i 7.6 tO ip. 6 4 -<u |—• «V o J 1 !15max 2.54 - 20 0 .4 5 *°' J 7.0 ’ #1015] 20x 11 flU / 11 025 *1 2 25.3. 025max Index Marking P a c k a g e o u tlin e s fo r tu b e s, tra y s etc. a re c o n ta in e d in o u r
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OCR Scan
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P-DIP-20-1
15max
025max
P-DSO-14-1
P-DSO-16-1
P-SOT-89-4-1
P-SOT-343
P-SOT-323-2-1
CS005561
gso05561
P-SOT89-4-1
max 32321
ic MARKING J LA
tic 41
P-SOT-323
GPS05557
marking 253
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