M16JZ51
Abstract: M16GZ51 BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR SM16GZ51 m16gz 30T2 16A1A SM16JZ51 thyristor handbook M16G
Text: M16GZ51,SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51,SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak off−State Voltage : VDRM = 400, 600 V l R.M.S On−State Current : IT RMS = 16 A l High Commutating (dv / dt)
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SM16GZ51
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BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR
m16gz
30T2
16A1A
SM16JZ51
thyristor handbook
M16G
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M16JZ51
Abstract: m16gz51 SM16JZ51 16A1A SM16GZ51 TOSHIBA THYRISTOR
Text: M16GZ51, SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51, SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600 V R.M.S On−State Current: IT RMS = 16 A High Commutating (dv / dt): (dv / dt) c = 10 V / µs
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SM16GZ51,
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m16gz51
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16A1A
SM16GZ51
TOSHIBA THYRISTOR
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M16JZ51
Abstract: No abstract text available
Text: M16GZ51, SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51, SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600 V z R.M.S On−State Current: IT RMS = 16 A z High Commutating (dv / dt): (dv / dt) c = 10 V / µs
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M16JZ51
Abstract: m16gz 1316A SM16GZ51
Text: M16GZ51, SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51, SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600 V z R.M.S On−State Current: IT RMS = 16 A z High Commutating (dv / dt): (dv / dt) c = 10 V / s
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SM16GZ51,
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m16gz
1316A
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M16JZ51
Abstract: m16gz51 16A1A SM16JZ51 SM16GZ51
Text: M16GZ51,SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51,SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak off−State Voltage : VDRM = 400, 600 V R.M.S On−State Current : IT RMS = 16 A High Commutating (dv / dt)
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M16JZ51
Abstract: m16gz51 SM16J M16G
Text: £ Ê S M 1 6 G Z 5 1 SILICON PLANAR TYPE g R / fl 6 J Z 5 1 AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage v DRIi“ 4 0 0 , 600V . R.M.S On-State Current lT RMS -16A . High Commutating (dv/dt)c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SM 16GZ51,SM 16JZ51 TO SHIBA BI-DIRECTIO NAL TRIODE THYRISTOR SILICON DIFFUSED TYPE M16GZ51, SM16JZ51 U nit in mm AC POWER CONTROL APPLICATIONS • Repetitive Peak off-State Voltage v DRM = 400> 600 v • R.M.S On-State C urrent rT RMS = 16A •
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16GZ51
16JZ51
SM16GZ51,
SM16JZ51
SF16GZ47
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M16JZ51
Abstract: No abstract text available
Text: TOSHIBA M16GZ51,SM16JZ51 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51, SM16JZ51 AC POWER CONTROL APPLICATIONS U nit in mm • Repetitive Peak off-State Voltage V D RM = 400, 600V • R.M.S On-State Current lT RMS = 16A • High Commutating (dv / dt)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M16GZ51,SM16JZ51 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M16GZ51, SM16JZ51 AC POWER CONTROL APPLICATIONS U nit in mm • Repetitive Peak off-State Voltage V D RM • R.M.S On-State Current lT R M S = 16 A • High Commutating (dv / dt)
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SM16GZ51
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SM16GZ51,
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