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Abstract: No abstract text available
Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 -Original Revision 0.2 (Mar. 15 2007) -Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Mar. 2007 Revision : 0.2 1/29 ESMT Preliminary M12L32162A SDRAM 1M x 16Bit x 2Banks
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M12L32162A
16Bit
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Untitled
Abstract: No abstract text available
Text: ESMT M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION The M12L32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS
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M12L32162A
16Bit
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Aug. 2006 Revision : 0.1 1/28 ESMT Preliminary M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z
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M12L32162A
16Bit
M12L32162
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M12L32162A
Abstract: M12L32162A-7BG M12L32162A-7TG
Text: ESMT M12L32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION The M12L32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS
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M12L32162A
16Bit
M12L32162A
M12L32162A-7BG
M12L32162A-7TG
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Untitled
Abstract: No abstract text available
Text: ESMT M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Revision 0.4 (Sep. 28 2007) - add speed –5 sepc.
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M12L32162A
M12L32162A
16Bit
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54PIN
Abstract: M12L32162A M12L32162A-7BG M12L32162A-7TG
Text: ESMT Preliminary M12L32162A Revision History Revision 0.1 Aug. 11 2006 - Original Revision 0.2 (Mar. 20 2007) - Add BGA package Revision 0.3 (Apr. 27 2007) - Rename BGA pin name (BA1 to NC; BA0 to BA) - Modify DC Characteristics Elite Semiconductor Memory Technology Inc.
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M12L32162A
16Bit
M12L32162A
54PIN
M12L32162A-7BG
M12L32162A-7TG
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M12L32162A
Abstract: 54-LEAD
Text: ESMT M12L32162A Operation Temperature Condition -40°C~105°C Revision History Revision 1.0 Jul. 11 2007 - Original Revision 1.1 (Jul. 25 2007) - Support CAS Latency = 1 Revision 1.2 (Dec. 26 2007) - Modify part no. - Modify tSH from 1ns to 2ns Elite Semiconductor Memory Technology Inc.
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M12L32162A
16Bit
M12L32162A
54-LEAD
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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um61256
Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Text: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
A29F002
um61256
PM25LV040
SST25LF040B
Pm25LV016
PM25LV010A
PM25LV080
SST25LF512A
HY514264
M5M418
hynix hy57v281620
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