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    M11 MARKING TRANSISTOR Search Results

    M11 MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    M11 MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M11 marking transistor

    Abstract: DMN100-7-F DMN100
    Text: SPICE MODELS: DMN100 DMN100 Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · SC-59 Extremely Low On-Resistance: 170mW @ VGS = 4.5V A High Drain Current: 1.1A D Ideal for Notebook Computer, Portable Phone, PCMCIA


    Original     		DMN100 SC-59 170mW AEC-Q101 DS30049 M11 marking transistor DMN100-7-F DMN100 PDF

    M11 marking transistor

    Abstract: DMN100 DMN100-7-F
    Text: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA


    Original     		DMN100 AEC-Q101 SC-59 J-STD-020C MIL-STD-202, DS30049 M11 marking transistor DMN100 DMN100-7-F PDF

    marking code 54

    Abstract: DMN100 DMN100-7-F
    Text: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits


    Original     		DMN100 AEC-Q101 SC-59 J-STD-020C MIL-STD-202, DS30049 marking code 54 DMN100 DMN100-7-F PDF

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage


    Original     		BCW65ALT1 236AB) 20mAdc, PDF

    BCW65ALT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO


    Original     		BCW65ALT1 236AB) 20mAdc, BCW65ALT1 PDF

    M11 marking

    Abstract: No abstract text available
    Text: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits


    Original     		DMN100 AEC-Q101 SC-59 SC-59 J-STD-020C MIL-STD-202, DS30049 M11 marking PDF

    marking CF

    Abstract: No abstract text available
    Text: Ordering number: EN 1780A i 2SC3650 No.l780A NPN Epitaxial Planar Silicon Transistor SAMYO High hpE> Low-Frequency General-Purpose Amp Applications i Applications . LF amp, various drivers, muting circuit Features . High DC current gain hpE=800 to 3200 . Low collector-to-emitter saturation voltage [VcE(sat)“0* ^


    OCR Scan     		l780A 2SC3650 marking CF PDF

    3SK184

    Abstract: 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14
    Text: —5/ Mini Type 4-pin Package • Outline U n it I mm Diodes 2 -8 ‘ o 3 0 .6 5 t Q 1 5, a w rn 15 — ,0 .6 5 t 0 . 1 5 m - 5 -8 1 (4 • > '« . A, it it i* á 7 ^ r- y T \ r „ iS h £ £ ¥ CM CM <*> ‘ o |o o l ÒK t t S t ? n £ ' M J CD 7 ^ M 'U * - v - y 7 \


    OCR Scan     		OH004, 3SK184 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14 PDF

    PG-SOT-23

    Abstract: TLE4961-1M
    Text: TLE4961-1M High Precision Automotive Hall Effect Latch Technical Product Description Rev. 1.1, 2012-04-12 Sense & Control Edition 2012-04-12 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		TLE4961-1M PG-SOT23 PG-SC59-3-5 PG-SOT23 PG-SOT-23 TLE4961-1M PDF

    ICE65L04F

    Abstract: ICE65L01F d flip flop 7475 sublvds lvds d flip flop 7475 circuit diagram ice65l04 ICE65 442-665 ICE65L04F-L 48948
    Text: iCE65 Ultra Low-Power mobileFPGA™ Family March 30, 2012 2.42 Data Sheet  First high-density, ultra low-power Figure 1: iCE65 Family Architectural Features single-chip, SRAM mobileFPGA family specifically designed for hand-held applications and long battery life


    Original     		iCE65TM 30-MAR-2011) iCE65 30-MAR-2012) ICE65L04F ICE65L01F d flip flop 7475 sublvds lvds d flip flop 7475 circuit diagram ice65l04 442-665 ICE65L04F-L 48948 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    DS600

    Abstract: XA95144XL AEC-Q100 XA9500XL XAPP114 XAPP427 XC9500XL Xa9500 2N6210
    Text: XA95144XL Automotive CPLD DS600 v1.1 April 3, 2007 Features • • • • • • • • • • • • AEC-Q100 device qualification and full PPAP support available in I-grade. Guaranteed to meet full electrical specifications over TA = -40° C to +85° C (I-grade)


    Original     		XA95144XL DS600 AEC-Q100 144-CSP XC9500XL XAPP111, XAPP784, DS600 XA9500XL XAPP114 XAPP427 Xa9500 2N6210 PDF

    Untitled

    Abstract: No abstract text available
    Text: XA95144XL Automotive CPLD R DS600 v1.0 January 12, 2007 Product Specification Features Power Estimation • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. Each macrocell in an XA9500XL automotive device


    Original     		XA95144XL DS600 XA9500XL XC9500XL XAPP111, XAPP784, PDF

    SMD Resistors, Arrays and Networks

    Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vse-db0010-0611 SMD Resistors, Arrays and Networks STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors PDF

    M21 mosfet

    Abstract: Generic N type Mosfet NMOSFET 4TPE150M C3216X5R0J226M MMBT2222A-7 MSOP-10 SC4607 SC4607IMSTR RESISTOR NETWORK SMD rp 10PIN
    Text: SC4607 Low Input, High Efficiency Synchronous, Step Down Controller POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4607 drives external N-channel MOSFETs with 1A peak current. A non-overlap protection is provided for ‹ The SC4607 is a voltage mode step down buck regulator controller that provides accurate high efficiency power


    Original     		SC4607 10-pin SC4607 100uF, 6TPB100M SC4607IMSTR MSOP-10 M21 mosfet Generic N type Mosfet NMOSFET 4TPE150M C3216X5R0J226M MMBT2222A-7 MSOP-10 SC4607IMSTR RESISTOR NETWORK SMD rp 10PIN PDF

    SMD MARKING code 613 sot23

    Abstract: No abstract text available
    Text: TLE4961-1M High Precision Automotive Hall Effect Latch Data Sheet Revision 1.0, 2012-07-20 Sense & Control Edition 2012-07-20 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		TLE4961-1M TLE4961-1M SMD MARKING code 613 sot23 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    Untitled

    Abstract: No abstract text available
    Text: LH7A400 32-Bit System-on-Chip Data Sheet FEATURES • Three Programmable Timers • 32-bit ARM9TDMI RISC Core – 16KB Cache: 8KB Instruction and 8KB Data – MMU Windows CE™ Enabled – Up to 250 MHz; see Table 1 for options • Three UARTs – Classic IrDA (115 kbit/s)


    Original     		LH7A400 32-bit SMA01012 PDF

    XA2C128-8CPG132Q

    Abstract: No abstract text available
    Text: XA2C128 CoolRunner-II Automotive CPLD R DS554 v1.0 October 31, 2006 Features • • • • • • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade Guaranteed to meet full electrical specifications over


    Original     		XA2C128 DS554 AEC-Q100 100-pin XAPP784: XAPP375: XAPP376: XAPP378: XAPP382: XAPP389: XA2C128-8CPG132Q PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device


    Original     		TPS60151 SLVSA02 TPS60151 V/140mA 140mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device


    Original     		TPS60151 SLVSA02 TPS60151 V/140mA 140mA PDF

    recommended layout CSG324

    Abstract: CSG324 SPARTAN 6 UG385 spartan 6 LX150 XC6SLX4 2 CSG225 I XC6SLX4 CSG225 UG385 LX150 AB p89 LX100T
    Text: Spartan-6 FPGA Packaging and Pinouts Advance [optional]Product Specification UG385 v1.0 June 24, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development


    Original     		UG385 Docu2009 recommended layout CSG324 CSG324 SPARTAN 6 UG385 spartan 6 LX150 XC6SLX4 2 CSG225 I XC6SLX4 CSG225 UG385 LX150 AB p89 LX100T PDF

    vhdl code of floating point adder

    Abstract: 11F32 AEC-Q100 LVCMOS15 LVCMOS25 LVCMOS33 XA2C128 XAPP427 XAPP399
    Text: XA2C128 CoolRunner-II Automotive CPLD R DS554 v1.1 May 5, 2007 Features • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade • Guaranteed to meet full electrical specifications over TA = -40° C to +105° C with TJ Maximum = +125° C


    Original     		XA2C128 DS554 AEC-Q100 100-pin 132-ball XAPP399: vhdl code of floating point adder 11F32 LVCMOS15 LVCMOS25 LVCMOS33 XAPP427 XAPP399 PDF