3sk144
Abstract: No abstract text available
Text: 3SK144 High Frequency FETs 3SK144 Silicon N-Channel 4-pin MOS Unit : mm For VHF high-gain low-noise amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 1 3 2 +0.1 Downsizing of sets by mini power package and automatic insertion 0.95 ●
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3SK144
50MHz
200MHz
3sk144
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3SK143
Abstract: No abstract text available
Text: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG
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3SK143
3SK143
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3SK143
Abstract: No abstract text available
Text: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic
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3SK143
800MHz
3SK143
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3SK144
Abstract: No abstract text available
Text: High Frequency FETs 3SK144 Silicon N-Channel 4-pin MOS FET For VHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic
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3SK144
200MHz
50MHz
3SK144
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3SK144
Abstract: 3SK14
Text: High Frequency FETs 3SK144 Silicon N-Channel 4-pin MOS FET For VHF high-gain and low-noise amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 0.95 3 2 0.4±0.2 0.4 –0.05 +0.1 0.8 +0.1 0.16 –0.06 1.9±0.2
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3SK144
3SK144
3SK14
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3sk143
Abstract: No abstract text available
Text: 3SK143 High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS Unit : mm For UHF high-gain low-noise amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 3 2 +0.1 Downsizing of sets by mini power package and automatic insertion 1 0.4 –0.05
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3SK143
3sk143
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3SK144
Abstract: No abstract text available
Text: High Frequency FETs 3SK144 Silicon N-Channel 4-pin MOS FET For VHF high-gain and low-noise amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG
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3SK144
3SK144
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3SK143
Abstract: No abstract text available
Text: High Frequency FETs 3SK143 Silicon N-Channel 4-pin MOS FET For UHF high-gain and low-noise amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID ±30
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3SK143
3SK143
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Untitled
Abstract: No abstract text available
Text: 3SK147 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-5 I(D) Max. (A)55m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m
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3SK147
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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1SV211
Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Text: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245
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SC-59)
SC-70)
3SK146
3SK153
2SC3828
2SC4214
SC4244
2SC3121
2SC3120
2SC3862
1SV211
2SC2348
2SC2347
3SK240
1SV259
2SC382
3SK275
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mixer diode
Abstract: tv sony 1435 3SK147 N-Channel, Dual-Gate FET 04 6824 6 dual-gate
Text: iï^NTr 3SK147 GaAs N-channel Dual-Gate MES FET D e s c rip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain characteristics and low operating voltage are accomplished by optimum mask pattern design. Simplified high frequency
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3SK147
800MHz
3SK147
mixer diode
tv sony 1435
N-Channel, Dual-Gate FET
04 6824 6
dual-gate
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3SK140
Abstract: NF 028 3SK146 gaas fet vhf uhf 3SK126 3SK127
Text: 13. 4LEADS SUPER MINI PACKAGE SERIES -Î O F CO O 0 N r\ tn s Type No. UHF RF 3SK140 { P-Channel j ! 1 > rh tn H V) H n ;0 70 X -ì n \ o *a —3 O m in lYfsl (1KHz) TYP. •d s s N-Channel CD IO > G a A s M ES FET < Application \A JZ H SMQ V DS V DS !d
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3SK140
3SK126
3SK127
3SK146
3SK140
NF 028
3SK146
gaas fet vhf uhf
3SK126
3SK127
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3SK142
Abstract: 3SK14 MWAF
Text: 3SK 142 3SK142 '>* □ > N & + 4 t f MOS Jf£./Si N-Channel T e tro d e MOS / U H F H igh G ain Low- noise Am plificr • & • » /F e a tu r e s * f f « a N Fa««J*?v‘. / L o w NF • «^M »PG ö*iv./-H iRhPG 7 1: i t A ./ C r o s s Pack package configuration
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3SK142
/Cro66
In-10mA.
3SK142
3SK14
MWAF
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c65 004
Abstract: C65 - 004 3SK143 C65 004 13 C65- 004 3SK14
Text: 3SK143 3SK143 y ij 3 y N 4 S MOS J ^ / S i N-Channel T etro d e MOS X ’HK High Gain Low-Noise Amplifier • W • U ni : mm t Features K tM ^ N P r n t v / L o w NF 11 M S i OlISI- -j — - 4 M S tO 15 CM • * > J« W P G * '* » v ./H ig h P G • • v - y m i r i H S m 'M i f t J U V T - t r v r.
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3SK143
f-800MHi
c65 004
C65 - 004
3SK143
C65 004 13
C65- 004
3SK14
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3SK146
Abstract: No abstract text available
Text: 3SK146 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm TV TUNER UHF MIXER APPLICATIONS. FEATURES: . Superior Cross Modulation Performance. . Low Reverse Transfer Capacitance : CrSs=0.02pF Typ. . Low Noise Figure : NF=2.6dB(Typ.)
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3SK146
800MHz
TTA25A200A
3SK146
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3SK146
Abstract: No abstract text available
Text: 3SK146 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR T V TU N E R , UHF RF A M P LIF IE R A PP LIC A T IO N S . T V TU N ER UHF M IX E R A PP LIC A T IO N S . U n it in m m • fQ 2 2.9 - a .'5 • S u p e rio r C ross M o d u la tio n P e rfo rm an c e.
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3SK146
TTA25A200A
3SK146
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cd 7678
Abstract: 3SK149 N-Channel, Dual-Gate FET 6908 dual-gate
Text: - -r.r. „ a m m i M m v a i m V , SONY COR P/CO MP ON EN T PRODS ~77 T '3 h A S DÉTjñ3ñE3B3 □□□Q220 3 3SK149 GaAs N-channel Dual-Gate MES FET Description: The 3SK149 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers. Low noise and high gain
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3a23fl3
0D00250
3SK149
3SK149
cd 7678
N-Channel, Dual-Gate FET
6908
dual-gate
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3SK14
Abstract: tbfc transistor hf
Text: 3S K 14 3SK14 N - y - * ¿ t S I'M O S J B S ' y □ 9 a a * -r>e - ^ >* mxtmma «* NChannel Silicon MOS FiekJ * a -y*<m Effect Transistor High Input Impedance Amplifier and Chopper iif t x m f f l Industrial Use » » B / PA C K A G E DIMENSIONS U n it i
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3SK14
3SK14
tbfc
transistor hf
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nf 948
Abstract: 4600 fet U/25/20/TN26/15/850/NF 948 NF 841 3SK148 CD 7812 dual-gate
Text: 3SK148 SONY GaAs N-channel Dual-Gate MES FET Description: The 3SK148 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern designing. Easier high frequency circuits
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3SK148
3SK148
800MHz
800MHz
nf 948
4600 fet
U/25/20/TN26/15/850/NF 948
NF 841
CD 7812
dual-gate
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SONY NEN 250
Abstract: vy 5 fet sony 877 1N 7812 3SK148 dual-gate
Text: SONY C ORP /C OH PO NEN T PRODS 77 DE | f l 3 0 2 3 f l i 0 0 0 0 2 5 4 0 B 'T ’3 f'^ > K 3SK148 SONY GaAs N-channel Dual-Gate MES FET Description: The 3SK148 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high
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3SK148
3SK148
800MHz
800MHz
2000MHz
SONY NEN 250
vy 5 fet
sony 877
1N 7812
dual-gate
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T572S
Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Text: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain
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3fl23fl3
3SK147
800MHz
T572S
tv sony 1435
J50 O 26
dual-gate
17458
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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3SK121
Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Text: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160
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3SK126
3SK160
3SK121
3SK198
3SK140
3SK146
3SK199
3SK114
3SK159
3SK152
3SK121
SC4251
3SK150
S47B
3SK140
3SK152
1SS241
DLP238
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