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    M-BOND GA - 61 A Search Results

    M-BOND GA - 61 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-ADN4650EB1Z Analog Devices ADN4650 Evaluation Board Visit Analog Devices Buy
    ADN4651BRSZ-RL7 Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua Visit Analog Devices Buy
    ADN4692EBRZ-RL7 Analog Devices MLVDS Xcvr,FD,100M Type 1 Rx,E Visit Analog Devices Buy
    ADN4695EBRZ Analog Devices MLVDS Xcvr,FD,100M Type 2 Rx,E Visit Analog Devices Buy
    EVAL-ADN4652EB1Z Analog Devices ADN4652 SOIC-W Eval Board Visit Analog Devices Buy

    M-BOND GA - 61 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M-BOND GA-61

    Abstract: dupont mylar rohs degreaser GA 61 Vishay GT-14
    Text: M-Bond GA-61 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND GA-61 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • • • • • • • M-Prep Neutralizer 5A


    Original     		PDF GA-61 GA-61 GT-14 08-Apr-05 M-BOND GA-61 dupont mylar rohs degreaser GA 61 Vishay

    Untitled

    Abstract: No abstract text available
    Text: M-Bond GA-61 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND GA-61 INSTALLATION: •          CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges


    Original     		PDF GA-61 GA-61 GT-14 27-Apr-2011

    14046

    Abstract: dian M-BOND GA-61 LD50 14046 application note GA-61 M-BOND GA-61 part b M-Bond GA - 61 A
    Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part B November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM017I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)


    Original     		PDF GA-61 MGM017I 805-FRM011 14046 dian M-BOND GA-61 LD50 14046 application note GA-61 M-BOND GA-61 part b M-Bond GA - 61 A

    28064-14-4

    Abstract: M-BOND GA-61 CAS No. 28064-14-4 A 27611 MATERIAL SAFETY 29CFR1910 transistor A 27611 LD50 polyglycidyl M-Bond GA - 61 A
    Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part A November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM016I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)


    Original     		PDF GA-61 MGM016I 805-FRM011 28064-14-4 M-BOND GA-61 CAS No. 28064-14-4 A 27611 MATERIAL SAFETY 29CFR1910 transistor A 27611 LD50 polyglycidyl M-Bond GA - 61 A

    ze 003

    Abstract: 001-120 115-13 ZE 004 TGA6345-EEU
    Text: Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression 6 dB Typical Noise Figure


    Original     		PDF TGA6345-EEU TGA6345-EEU 25-mil-length ze 003 001-120 115-13 ZE 004

    TGA6316-EEU

    Abstract: No abstract text available
    Text: Product Data Sheet 6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU Key Features and Performance • • • • • • 6 to 17 GHz Frequency Range Dual Channel Power Amplifier 20.5dB Typical Gain, Single Channel 1.5:1 Typical Input SWR, 2.1:1 Typical


    Original     		PDF TGA6316-EEU 31dBm TGA6316-EEU 17-GHz. 1200-mm dualchann994

    LT 7210

    Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz LT 7210 lt 7210 datasheet 440M 470M RA60H4452M1-101

    400M

    Abstract: 430M 470M RA30H4047M1
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4047M1 400-470MHz RA30H4047M1 30-watt 470-MHz 400M 430M 470M

    lt 7210

    Abstract: 470M RA30H4552M1 RA30H4552M1-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to


    Original     		PDF RA30H4552M1 450-520MHz RA30H4552M1 30-watt 520-MHz lt 7210 470M RA30H4552M1-101

    RA60H4047M1-101

    Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz Mar2008 RA60H4047M1-101 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module

    lt 7245

    Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz Mar2008 lt 7245 lt 7210 440M 470M RA60H4452M1-101 POUT70

    lt 7210

    Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz lt 7210 400M 430M 470M RA60H4047M1-101 RA60H4047M

    d408

    Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to


    Original     		PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz d408 DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1-101 DD 128 transistor

    RA45H7687M1

    Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to


    Original     		PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 45WATT DD 128 D transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m


    OCR Scan     		PDF NE76000

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz


    OCR Scan     		PDF NE24200 NE24200 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim


    OCR Scan     		PDF NE32400 NE32400 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: Discrete MESFET l"fl^ ET A M V V • ■ # 0.5 iim x 300 Mm FET £ 1.5-dB Noise Rgure with 11-dB Associated Gain at 10-GHz £ 2.5-dB Noise Rgure with 7-dB Associated Gain at 18-GHz Q All-gold Metallization for High Reliability Recessed Gate Structure DESCRIPTION


    OCR Scan     		PDF 11-dB 10-GHz 18-GHz TGF1350-SCC 18-GHz. Emai08

    i678

    Abstract: No abstract text available
    Text: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in


    OCR Scan     		PDF TGF4250-SCC, TGF4250-SCC TGF4250-SCC MS/402 i678

    microwave fet

    Abstract: No abstract text available
    Text: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure


    OCR Scan     		PDF TGF1350-SCC 11-dB TGF1350-SCC MS/402 microwave fet

    Untitled

    Abstract: No abstract text available
    Text: TGF1350-SCC Discrete MESFET 0.5 \im x 300 iim FET 1.5-dB Noise Figure with 11-dB Associated Gain at 10-GHz 2.5-dB Noise Figure with 7-dB Associated Gain at 18-GHz All-gold Metallization for High Reliability Recessed Gate Structure PHOTO ENLARGEMENT DESCRIPTION


    OCR Scan     		PDF TGF1350-SCC 11-dB 10-GHz 18-GHz 18-GHz. 350-SCC

    transistor TT 3043

    Abstract: IJEAD
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 b4E752S D0hSb73 transistor TT 3043 IJEAD

    Untitled

    Abstract: No abstract text available
    Text: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in tun I T 10 dB GAIN A T 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz T O 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE


    OCR Scan     		PDF

    low noise pseudomorphic

    Abstract: No abstract text available
    Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE


    OCR Scan     		PDF