M-BOND GA-61
Abstract: dupont mylar rohs degreaser GA 61 Vishay GT-14
Text: M-Bond GA-61 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND GA-61 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • • • • • • • M-Prep Neutralizer 5A
|
Original
|
GA-61
GA-61
GT-14
08-Apr-05
M-BOND GA-61
dupont mylar rohs
degreaser
GA 61
Vishay
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M-Bond GA-61 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND GA-61 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges
|
Original
|
GA-61
GA-61
GT-14
27-Apr-2011
|
PDF
|
14046
Abstract: dian M-BOND GA-61 LD50 14046 application note GA-61 M-BOND GA-61 part b M-Bond GA - 61 A
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part B November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM017I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)
|
Original
|
GA-61
MGM017I
805-FRM011
14046
dian
M-BOND GA-61
LD50
14046 application note
GA-61
M-BOND GA-61 part b
M-Bond GA - 61 A
|
PDF
|
28064-14-4
Abstract: M-BOND GA-61 CAS No. 28064-14-4 A 27611 MATERIAL SAFETY 29CFR1910 transistor A 27611 LD50 polyglycidyl M-Bond GA - 61 A
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond GA-61 Part A November 23, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM016I 919-365-3800 CHEMTREC 1-800-424-9300 (U.S.)
|
Original
|
GA-61
MGM016I
805-FRM011
28064-14-4
M-BOND GA-61
CAS No. 28064-14-4
A 27611
MATERIAL SAFETY
29CFR1910
transistor A 27611
LD50
polyglycidyl
M-Bond GA - 61 A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg
|
OCR Scan
|
NE76000
|
PDF
|
ze 003
Abstract: 001-120 115-13 ZE 004 TGA6345-EEU
Text: Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression 6 dB Typical Noise Figure
|
Original
|
TGA6345-EEU
TGA6345-EEU
25-mil-length
ze 003
001-120
115-13
ZE 004
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m
|
OCR Scan
|
NE76000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz
|
OCR Scan
|
NE24200
NE24200
24-Hour
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim
|
OCR Scan
|
NE32400
NE32400
24-Hour
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Discrete MESFET l"fl^ ET A M V V • ■ # 0.5 iim x 300 Mm FET £ 1.5-dB Noise Rgure with 11-dB Associated Gain at 10-GHz £ 2.5-dB Noise Rgure with 7-dB Associated Gain at 18-GHz Q All-gold Metallization for High Reliability Recessed Gate Structure DESCRIPTION
|
OCR Scan
|
11-dB
10-GHz
18-GHz
TGF1350-SCC
18-GHz.
Emai08
|
PDF
|
i678
Abstract: No abstract text available
Text: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in
|
OCR Scan
|
TGF4250-SCC,
TGF4250-SCC
TGF4250-SCC
MS/402
i678
|
PDF
|
microwave fet
Abstract: No abstract text available
Text: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure
|
OCR Scan
|
TGF1350-SCC
11-dB
TGF1350-SCC
MS/402
microwave fet
|
PDF
|
TGA6316-EEU
Abstract: No abstract text available
Text: Product Data Sheet 6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU Key Features and Performance • • • • • • 6 to 17 GHz Frequency Range Dual Channel Power Amplifier 20.5dB Typical Gain, Single Channel 1.5:1 Typical Input SWR, 2.1:1 Typical
|
Original
|
TGA6316-EEU
31dBm
TGA6316-EEU
17-GHz.
1200-mm
dualchann994
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TGF1350-SCC Discrete MESFET 0.5 \im x 300 iim FET 1.5-dB Noise Figure with 11-dB Associated Gain at 10-GHz 2.5-dB Noise Figure with 7-dB Associated Gain at 18-GHz All-gold Metallization for High Reliability Recessed Gate Structure PHOTO ENLARGEMENT DESCRIPTION
|
OCR Scan
|
TGF1350-SCC
11-dB
10-GHz
18-GHz
18-GHz.
350-SCC
|
PDF
|
|
|
transistor TT 3043
Abstract: IJEAD
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP
|
OCR Scan
|
NE681
b4E752S
D0hSb73
transistor TT 3043
IJEAD
|
PDF
|
400M
Abstract: 430M 470M RA30H4047M1
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
|
Original
|
RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
400M
430M
470M
|
PDF
|
lt 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
|
Original
|
RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
lt 7210
470M
RA30H4552M1-101
|
PDF
|
RA60H4047M1-101
Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
|
Original
|
RA60H4047M1
400-470MHz
RA60H4047M1
60-watt
470-MHz
Mar2008
RA60H4047M1-101
lt 7245
lt 7210
400M
430M
470M
amplifier 60watt module
|
PDF
|
lt 7245
Abstract: lt 7210 440M 470M RA60H4452M1 RA60H4452M1-101 POUT70
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to
|
Original
|
RA60H4452M1
440-520MHz
RA60H4452M1
60-watt
520-MHz
Mar2008
lt 7245
lt 7210
440M
470M
RA60H4452M1-101
POUT70
|
PDF
|
lt 7210
Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
|
Original
|
RA60H4047M1
400-470MHz
RA60H4047M1
60-watt
470-MHz
lt 7210
400M
430M
470M
RA60H4047M1-101
RA60H4047M
|
PDF
|
d408
Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
|
Original
|
RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
d408
DD 128 D transistor
GG13
LT 7212
MHz-860
RA45H7687M1-101
DD 128 transistor
|
PDF
|
RA45H7687M1
Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to
|
Original
|
RA45H7687M1
764-870MHz
RA45H7687M1
45-watt
870-MHz
RA45H7687M1-101
45WATT
DD 128 D transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y Units in tun I T 10 dB GAIN A T 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz T O 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE
|
OCR Scan
|
|
PDF
|
low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
|
OCR Scan
|
|
PDF
|
