RFLW5N1500
Abstract: No abstract text available
Text: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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11-Mar-11
RFLW5N1500
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RFLW5N1500
Abstract: No abstract text available
Text: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
RFLW5N1500
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RFLW5N1500
Abstract: No abstract text available
Text: RFLW 5N Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model enclosed
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
RFLW5N1500
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . RFLW KEY BENEFITS • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" or 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF • Equivalent circuit model • S parameter files available for download
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VMN-PT0227-1007
17-Jun-10
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1N4150UR-1
Abstract: No abstract text available
Text: MINI-MELF-SMD Silicon Diode 1N4150UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
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1N4150UR-1
MIL-S-19500/
LL-34/35
DO-35
Mil-S-19500/231
031-A
MSC0960
1N4150UR-1
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MSTF-2ST-10R00J-G
Abstract: Au Sn eutectic M570 bond wire gold soft solder die bonding 84-1LMI
Text: Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMIC’s Discussion Millimeterwave MMIC's are becoming more common in commercial applications. Their small size and potentially lower cost has made them valuable in the growing market of millimeterwave systems. Their size and delicate nature
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D35BV102KPX
MSTF-2ST-10R00J-G
Au Sn eutectic
M570
bond wire gold
soft solder die bonding
84-1LMI
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TP-1010
Abstract: TP1041 54LVTH162244 pda jog x 0602 ma 54LVTH162244RP TM2018 TP1007
Text: PRELIMINARY SPACE ELECTRONICS INC. 16-BIT BUFFERS/DRIVERS WITH 3-S TATE OUTPUTS S PACE PRODUCTS 54LVTH162244RP Memory FEATURES : DESCRIPTION: • Output ports have equivalent 22-Ω series resistors, so no external resistors are required • Support mixed-mode signal operation 5V input and output
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16-BIT
54LVTH162244RP
00Rev0
TP-1010
TP1041
54LVTH162244
pda jog
x 0602 ma
54LVTH162244RP
TM2018
TP1007
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LL4150 SMD
Abstract: DO-213AA LL4150 LL4150-1
Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
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LL4150
LL4150-1
MIL-S-19500/
LL-34/35
DO-213AA
DO-35
031-A
LL4150 SMD
DO-213AA
LL4150
LL4150-1
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DO-213AA
Abstract: LL4150 LL4150-1
Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TX/ TXV and S level per
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LL4150
LL4150-1
MIL-S-19500/
LL-34/35
DO-213AA
DO-35
031-A
DO-213AA
LL4150
LL4150-1
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TP-1010
Abstract: TP1007 TP-1012 54LVTH162245RP TM500 TP1008 TM2023 TP-1007 TP1033
Text: PRELIMINARY SPACE ELECTRONICS INC. 16-B IT BUS TRANSCEIVERS WITH 3-S TATE OUTPUTS S PACE PRODUCTS 54LVTH162245RP Memory FEATURES : DESCRIPTION: • A-Port outputs have equivalent 22-Ω series resistors, so no external resistors are required • Support mixed-mode signal operation 5V input and output
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54LVTH162245RP
00Rev0
TP-1010
TP1007
TP-1012
54LVTH162245RP
TM500
TP1008
TM2023
TP-1007
TP1033
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60cmq
Abstract: 403CNQ IOR 445
Text: International IöR Rectifier Wofei Port Number Die Pail Number 3D Schottky Diodes Die A' length/Side in. mm Anode Bond Pad 'B' length/Side Metalization Tray (in.) mm (top side) Process Quantity Equivalent Finished Products S C I75S060A W B SCI75S060A (,|75i
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I75S060A
SC200ROI5SW
SC200S030SWB
SC200H045SWB
SC200S045SWB
S045SWB
H045SWB
60cmq
403CNQ
IOR 445
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DIODE Z54
Abstract: No abstract text available
Text: MINI-MELF-SMD Applications LL4150 or LL4150-1 10 Silicon Diode Switching Used in general purpose applications, where a low current controlled forw ard characteristic and fast sw itching speed are im portant. BKC can produce generic equivalents to JAN/ TX; TXV and S level per
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LL4150
LL4150-1
MIL-S-19500/
LL-34/35
DO-213AA
DO-35
10-REF
031-A
DIODE Z54
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TGA8722-SCC
Abstract: s32a
Text: Amplifier TGA8722-SCC 2 to 20-GHz Frequency Range 15-dB Typical Gain, 16-dB at 6 V 1.8:1 Typical Input SWR, 1.4:1 Typical Output SWR 13-dBm Output Power PidB at Midband, 15-dBm at 6 V 5.5-dB Typical Noise Figure 2,8956 x 2,6416 x 0,1524 mm (0.114 x 0.104 x 0.006 in.)
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TGA8722-SCC
20-GHz
15-dB
16-dB
13-dBm
15-dBm
TGA8722-SCC
20-GHz.
s32a
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Untitled
Abstract: No abstract text available
Text: TGS8630-XCC DC TO 12-GHz SPDT SWITCH AP PR O VAL 5026 On-Chip Driver Compatible With CMOS or Open-Collector TTL Typical Insertion Loss . . . 2.3 dB at 12 GHz High Isolation . . . 46 dB Through 12 GHz Useable Bandwidth Through 18 GHz Size: 3,454 x 2,007 x 0,102 mm
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TGS8630-XCC
12-GHz
46-dB
1016x0
0040x0
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MBD3057-C18
Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability
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MIL-STD-195
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54temperature,
MBD3057-C18
MBD5057-C18
back Tunnel diode
MBD-3057-C18
MBD5057
MBD2057-C18
MBD1057
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MBD3057-C18
Abstract: back Tunnel diode
Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d
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MBD3057-C18
Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth
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BKC Semiconductors
Abstract: DO-213AA LL4938 Bkc SMD mini-melf-smd
Text: MINI-MELF-SMD Silicon Switching Diode Applications Used in general purpose applications,where high voltage and switching speed are important. BKC can produce generic equivalents to JAN T X / T X V and S level per M IL-S -195Q 0/169 with internal source control drawings. Use HR, HRX,
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MlL-S-19500
DO-35
LL-34/35
DO-213AA)
4031-B
LL4938
BKC Semiconductors
DO-213AA
Bkc SMD
mini-melf-smd
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i236
Abstract: No abstract text available
Text: Application Not High-Volume Commercial Plastic Packaged GaAs Monolithic Devices Abstract In d eveloping a new product line o f high volum e com m ercial plastic packaged G aA s m onolithic devices, it has becom e evi dent that norm al design, fabrication, and evaluation tech
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I-236
i236
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Untitled
Abstract: No abstract text available
Text: TGA8061-SCC Low-Noise Amplifier 100-MHz to 3.5-GHz Frequency Range 3-dB Bandwidth Exceeds 5 Octaves 2.4-dB Noise Figure with Low Input and Output SWR 18-dB Gain 15-dBm Output Power at 1-dB Gain Compression Operates from Single 12 V Supply 1,524 x 1,524 x 0,102 mm 0.060 x 0.060 x 0.004 in.
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TGA8061-SCC
100-MHz
18-dB
15-dBm
A8061-SCC
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Untitled
Abstract: No abstract text available
Text: TGA8320-SCC Gain Block Amplifier DC to 8-GHz Frequency Range L, S, and C-Band 9.5-dB Gain 1.3:1 Input/Output SWR 17-dBm Output Power at 1-dB Gain Compression Typical Noise Figure is 5-dB 1,066 x 1,219 x 0,152 mm (0.042 x 0.048 x 0.006 in.) PHOTO ENLARGEMENT
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TGA8320-SCC
17-dBm
TGA8320-SCC
16-dB
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RR-63
Abstract: No abstract text available
Text: inteT RELIABILITY REPORT RR-63 August 1989 4 Static RAM Reliability Report MADHU NIMGAONKAR COMPONENTS CONTRACTING DIVISION QUALITY AND RELIABILITY ENGINEERING Order Number: 240544-001 4-63 SRAM RELIABILITY DATA SUMMARY CONTENTS PAGE 1.0 IN T R O D U C T IO N .4-65
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RR-63
RR-63
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Untitled
Abstract: No abstract text available
Text: TGA8061-SCC “ H 1 100-MHz to 3.5-GHz Frequency Range 3-dB Bandwidth Exceeds 5 Octaves 2.4-dB Noise Figure with Low Input and Output SWR 18-dB Gain 15-dBm Output Power at 1-dB Gain Compression Operates from Single 12 V Supply 1,524 x 1,524 x 0,102 mm 0.060 x 0.060 x 0.004 in.
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TGA8061-SCC
100-MHz
18-dB
15-dBm
A8061-SCC
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5082-0024
Abstract: No abstract text available
Text: HEWLETT-PACKARD i CMPNTS EOE D □ 44475ÔM QDGStbT HIGH RELIABILITY SCHO TTKY CHIP FOR M EDICAL APPLICATIO NS U'/jT] H E W L E T T vlWJj P A C K A R D 2 CJ HSCH-1111 Features JAN-TXV EQUIVALENT HIGH BREAKDOWN VOLTAGE PICO -SECO N D SW ITCHING SPEED LOW TURN-ON
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HSCH11
MIL-S-19500
IL-STD-750
IL-STD-883
D-883
5082-0024
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