IXYS MCC 425
Abstract: IXYS MCC 550
Text: Date: 27.06.2012 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 552 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 1200 552-12io2 552-12io2 552-12io2 1400 552-14io2 552-14io2 552-14io2 1600 552-16io2 552-16io2 552-16io2 VOLTAGE RATINGS VDRM VDSM
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552-12io2
552-14io2
552-16io2
552-12io2
IXYS MCC 425
IXYS MCC 550
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SSD1606
Abstract: No abstract text available
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.
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SSD1606
SSD1606
11-May-11
17-Oct-11
2002/95/EC
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552 diode
Abstract: sot723
Text: DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.
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DAN222M3T5G
OT-723
552 diode
sot723
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Untitled
Abstract: No abstract text available
Text: SDD66 40mm RECTIFIER DIODE 7000V / 520A The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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SDD66
SDD66
SDD66MT
SDD66MR
SDD66MM0
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Untitled
Abstract: No abstract text available
Text: SSH6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 £2 < CD Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (M ax) @ Low Rdsjon) •*1-552 £2 (Typ.)
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SSH6N70A
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Untitled
Abstract: No abstract text available
Text: p PriM 9H 8!! iQ Q Q Revised A ugust 1999 EMICONDUCTGRTM 74F552 Octal Registered Transceiver with Parity and Flags General Description Features The 74F 552 octal transceiver contains tw o 8-bit registers for te m p o ra ry storage o f data flowing in either direction.
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74F552
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Untitled
Abstract: No abstract text available
Text: HC-5524 Semiconductor August 1998 EIA/ITU 24V PABX SLIC with 25mA Loop Feed File Number 2798.5 Features • DI M on olithic High Voltage Process T he H C -552 4 tele ph on e S u b scrib e r Line Interface C ircuit integrates m ost o f the B O R S C H T fun ctions on a m on olithic
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HC-5524
1-800-4-HARR
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CD4019
Abstract: mc14519b
Text: 'MOTOROLA SC {LOGIC} ifi I>F| fc,3b?552 OO?"!?!? 1 ,6367252 ^MOTOROLA SC. LOGIC 9 8 D 79717 D r-t> 7 ~ /h £ / MC14519B MOTOROLA CMOS MSI 4-BIT AND/OR SELECTOR (LO W PO W ER C O M P L E M E N T A R Y MOS) or QUAD 2-CHANNEL DATA SELECTOR or 4-BIT AND/OR SELECTOR
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MC14519B
C14519B
CD4019
mc14519b
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d 4464 c
Abstract: No abstract text available
Text: 552 EHSemiconductor National 54F/74F552 Octal Registered Transceiver with Parity and Flags General Description T h e 'F552 octa l transceiver co ntains tw o 8-bit registers fo r te m p o ra ry storage o f data flow ing in e ithe r direction. Each register has its own clo ck pulse and clo ck enable input as
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54F/74F552
d 4464 c
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NDL5731P
Abstract: DL-5735 DL5735 DL-57
Text: N E C ELECTRONI CS INC bSE D • bME7SES 0037=552 'JOT INECE DATA SHEET NEC LASER DIODE MODULE NDL5 7 3 1 P ELECTRON DEVICE 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5731P is a 1 310 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed for a
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NDL5731P
1988M
DL-5735
DL5735
DL-57
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GM5ZR01200A
Abstract: 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3
Text: No. SHARP CORPORATION DG-98Y016 TECHNICAL LITERATURE FOR Light Emitting Diode MODEL No. DATE G M 5 Z R 0 1 2 Q 0 A s e r ie s 1 3 -N o v -9 8 1. These specification sheets include m aterials protected under the copyright o f Sharp Corporation "Sharp" . Please do not reproduce or cause anyone to reproduce them without Sharp's consent
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DG-98Y0I6
GM5ZR01200A
13-Nov-98
PO1200A
GM1ZSO1200A
GM5ZS95200A
180sec
18198
GM5ZE01200A
GM5ZG01200A
GM5ZJ01200A
GM5ZS01200A
GM5ZV01200A
IR sensor for 40khz
EIAJ C-3
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733HC
Abstract: CCDs Charge Coupled Devices tr4l 2SC372 OPA2048CA QPA2048CA photo transistor array
Text: OKI electronic QPA2 0 4 8 CA com ponents Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, and reset
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OPA2048CA_
OPA2048C
048-bit,
OPA2048CA
OPA2048CA
OPA2Q48CA
b724240
733HC
CCDs Charge Coupled Devices
tr4l
2SC372
QPA2048CA
photo transistor array
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LW - 6052
Abstract: LW 6052
Text: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ RCD's FR series was designed to obtain the best from two devices. It combines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.
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MM-555
Abstract: MM452 gbs transistors MM5559 mm450 MM555 MM551 MM-552
Text: D lffilM . M M 450/M M 550, M M 451/M M 551 M M 4 5 2 /M M 5 5 2 , M M 455/M M 555 M O S-F E T Sw itch e s FEATURES GENERAL Large A nalog In p u t— ± 1 0 V Low S u pply Voltage— V B U LK = + 1 0 V V GG = - 2 0 V Typical O N Resistance— V m = - 1 0 V , 1 5 0 fi
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MM450/MM550,
MM451/MM551
MM452/MM552,
MM455/MM555
150fl
Current-200
MM450,
MM550
staM451
MM452,
MM-555
MM452
gbs transistors
MM5559
mm450
MM555
MM551
MM-552
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8XC552
Abstract: 12MH2 80C51-based
Text: P hilips Sem iconductors 80C51-Based 8-Bit M icrocontrollers 80C51 Family Derivatives 8XC552/562 overview 8XC552 OVERVIEW 83C562 OVERVIEW The 8XC552 is a stand-alone high-performance microcontroller designed for use in real-time applications such as instrumentation, industrial control, and
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80C51-Based
80C51
8XC552/562
8XC552
80C51.
12MH2
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Variable Capacitance Diode BB 804 • For FM tuners • Monolithic chip with common cathode for perfect tracking of both diodes • Uniform "square law” characteristics • Ideal Hifi tuning device when used in low-distortion, back-to-back
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Q62702-B372
EHA07004
OT-23
fi235bOS
D1S047H
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon Switching Diode Array SMBD 2837 SMBD 2838 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel S M B D 2837 S M B D 2838 sA5 sA4 Q68000-A8487 Q68000-A8437 Pin Configuration Package1) ï
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Q68000-A8487
Q68000-A8437
OT-23
EHA0700*
0235bG5
01225Gb
D1225D7
6235bG5
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63
BAR63-04
fl235b05
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HP 2601
Abstract: hp 2611 gi 2601 HCPL-0611 MCL2601 6N137 HCPL-0600 HCPL-0601 HCPL-2601 OC40
Text: — GND L E D -P h o to Diode Buffered by T T L C om patible Logic with Control Gate LED - y * — K +TTL n s tt & P S2007B B £ % If m ax m A 'A Vr m ax (V ) £ 2 m Pd\ m ax (m W ) 10 5 - VcE m ax (V ) V cc* 'A I OL m ax (m A ) m » n £ PD2 m ax (m W )
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PS2007B
100ns*
6N137
120ns
TLP554
TLP2601
HCPL-0600
HCPL-0601
HCPL-0611
HP 2601
hp 2611
gi 2601
HCPL-0611
MCL2601
HCPL-0601
HCPL-2601
OC40
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2SD1641
Abstract: tcl tv circuit
Text: Power Transistors 2SD1Ó41 2SD1641 Silicon PNP Triple-Diffused Planar Type Package D im ensions High DC C urrent Gain h FE , High Power A m plifier TV Power Source O utput • Features • Wide area of safety operation (ASO) • P rotective avalanche diode built-in
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2SD1641
JO-10
2SD1641
tcl tv circuit
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motorola diode
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAV199LT1
BAV199LT3
inch/10
BAV199LT1
OT-23
O-236AB)
motorola diode
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BB619
Abstract: 552 diode
Text: 711002b G0ba37*ì B3Q I PHIN BB619 VHF VARIABLE CAPACITANCE DIODE The BB619 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band B up to 460 MHz in all-band tuners. The diode is encapsulated in a hermetically sealed SOD 123 plastic envelope suitable fo r surface mounting.
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711002b
BB619
BB619
552 diode
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FAH diode
Abstract: STL 1550 STT 3 SIEMENS AOO E Q62702-P3042 EE-70 552 diode m 552 diode
Text: SIEM EN S 1550 nm Laser in Receptacle Package, Low Power STL 81ÜQ7X * * * * Designed or application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodindfl at rear mirror tor monitoring and
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STL61Ã
Q62702-P3042
81007X
I54fl
FAH diode
STL 1550
STT 3 SIEMENS
AOO E
EE-70
552 diode
m 552 diode
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MA40420
Abstract: schottky diodes Anti parallel
Text: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT Description This family of Gallium Arsenide Schottky diodes is fabri
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MA40401/MA40422
MA40420
schottky diodes Anti parallel
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