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    M/TB 5843 Search Results

    M/TB 5843 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    68458-430HLF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled Header, Through Hole, Single Row, 30 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    9584300A1J Amphenol Communications Solutions XCede, High speed backplane connectors, 4-Pair, power, 1 up. Visit Amphenol Communications Solutions
    68758-430HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Single Row, 30 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    68758-433HLF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angled Header, Through Hole, Single Row, 33 Positions, 2.54 mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    68458-435HLF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled Header, Through Hole, Single Row, 35 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions

    M/TB 5843 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    72194

    Abstract: No abstract text available
    Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 72194

    Untitled

    Abstract: No abstract text available
    Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC


    Original     		PDF SUM110N04-2m1P O-263 SUM110N04-2m1P-E3 11-Mar-11

    TB 5843

    Abstract: No abstract text available
    Text: SUM36N20-54P Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • • • • TrenchFET Power MOSFETs 175 °C Junction Temperature 100 % Rg and UIS Tested


    Original     		PDF SUM36N20-54P 2002/95/EC O-263 SUM36N20-54P-E3 11-Mar-11 TB 5843

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 11-Mar-11

    sum90p10-19l-e3

    Abstract: No abstract text available
    Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC


    Original     		PDF SUM90P10-19L 2002/95/EC O-263 SUM90P10-19L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sum90p10-19l-e3

    Untitled

    Abstract: No abstract text available
    Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC


    Original     		PDF SUM90P10-19L 2002/95/EC O-263 SUM90P10-19L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    sum90p10-19l-e3

    Abstract: No abstract text available
    Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC


    Original     		PDF SUM90P10-19L 2002/95/EC O-263 SUM90P10-19L-E3 11-Mar-11 sum90p10-19l-e3

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC


    Original     		PDF SUM110N04-2m1P O-263 SUM110N04-2m1P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC


    Original     		PDF SUM90P10-19L 2002/95/EC O-263 SUM90P10-19L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUM110P08-11L rev

    Abstract: No abstract text available
    Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		PDF SUM110P08-11L O-263 SUM110P08-11L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUM110P08-11L rev

    Untitled

    Abstract: No abstract text available
    Text: SUM36N20-54P Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • • • • TrenchFET Power MOSFETs 175 °C Junction Temperature 100 % Rg and UIS Tested


    Original     		PDF SUM36N20-54P 2002/95/EC O-263 SUM36N20-54P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 25emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D


    Original     		PDF SUM110P04-05 O-263 SUM110P04-05-E3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM36N20-54P Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • • • • TrenchFET Power MOSFETs 175 °C Junction Temperature 100 % Rg and UIS Tested


    Original     		PDF SUM36N20-54P 2002/95/EC O-263 SUM36N20-54P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74342

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74342

    SM5843

    Abstract: CXD2500Q sm5843 as YM3623B pa hf dil 18 mz NJ 20 U1 W Yamaha AX 496 yamaha fc-5 yamaha ic
    Text: SM5843Ax1 fUPC mm5 V Z h ' y *i \/% fV NIPPON PRECISION CIRCUITS INC. S SM5843Axl i, 8{ & £ > ^ - (•< > £ - t f l / - ' > 3 » £ fr& 5 /c tf> 0 X 1 6 /1 8 /2 0 t:'* y £1\ £ /c , f r > W •ft •mm 1 8 /2 0 t* y b I ^ & ; £ [ f r- £ K # ] £ ; L ' 0 '


    OCR Scan     		PDF SM5843Ax1 SM5843Axlf-f A16/18/20tfy 18/20fc 00005dB) 4535fs 5465fs-7 455fs 745fs-7 SM5843 CXD2500Q sm5843 as YM3623B pa hf dil 18 mz NJ 20 U1 W Yamaha AX 496 yamaha fc-5 yamaha ic

    smd diode code 33-16

    Abstract: pj 3316 diode ,32.768 MHZ OSCILLATOR NOT GIVING OUTPUT BC602 GK724 your asl electronics sm 3316
    Text: I i pu Hi p j BUS 1, ailer-iDon Call Wailing CiUGW receiver 11 March 1999 P r o d u c t s p e c if ic a t io n General d&scriptfon The P C D 3316 is a low pow er m ixed signal C M O S integrated circuit fo r receiving physical layer signals like B ellcore’s ‘C P E 1 A lerting Signal (C A S )’ and the signals


    OCR Scan     		PDF

    3579545 crystal oscillator kss 7b

    Abstract: PCD3316 PCD3316T RFT Semiconductors
    Text: Philips Semiconductors Cl DCW receiver CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.12.1 7.12.2 7.12.3 7.12.4 7.12.5


    OCR Scan     		PDF

    CXC320

    Abstract: TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249
    Text: R ectifier D iodes ~ Capsule types Type ^RRM Range ^F AV Ths55°C ^F(RMS) @ 25°C If @ 25°C I fSM(2) 10m s V R=s60% V R^ 1 0 V ^RRM (Note 2) (Note 2) I2t (2) 10m s I rrm (V) (A) (A) (A) (A) (A) (Note 2) (A2S) SWxCXC300 200-1500 650 1170 1000 5500 6050 183 x 103


    OCR Scan     		PDF Ths55 SWxCXC300 SWxCXC320 SWxCXC380 SWxCXC400 SWxCXC470 SWxCXC445 SWxCXC565 SWxCXC350 SWxCXC515 CXC320 TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5843 Monolithic Linear 1C LA71525M S A flY O l Video/audio signal processor for VHS VCRs single chip for Y/C/A Overview Package Dimensions The LA71525M is a video/audio signal processor IC unit: mm for VHS VCRs. It handles recording and playback of


    OCR Scan     		PDF EN5843 LA71525M LA71525M 3174-QFP80E A10386 43kCl 24K1f 39kfl_ 0D5535T