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    msp430 TSS721

    Abstract: PCI2040 12v class d amplifier 8500 w mono PCI2040GGU PCI2040PGE SN74ACT8990 TLFD500 TLV320AD11A TLV320AD12A TMS320C6000
    Text: T H E JULY/AUGUST 1999 W O R L D L E A D E R I N D S P A N D A N A L O G Showcase ISSUE 3 Inside PCI PCI bus bridge to DSPs 2 DSL CODEC Codecs for Digital Subscriber Line 3 IEEE 1394 1394a link layer controller 4 HMC Local/remote temperature monitor, fan controller


    Original     		PDF 1394a A050699 SLYM043 msp430 TSS721 PCI2040 12v class d amplifier 8500 w mono PCI2040GGU PCI2040PGE SN74ACT8990 TLFD500 TLV320AD11A TLV320AD12A TMS320C6000

    TRANSISTOR BL 100

    Abstract: transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4116W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1586. z Small package. Pb Lead-free APPLICATIONS z SOT-323 NPN Silicon Epitaxial Planar Transistor.


    Original     		PDF 2SC4116W 2SA1586. OT-323 BL/SSSTF038 TRANSISTOR BL 100 transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor

    IrL 1540 N

    Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
    Text: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure


    Original     		PDF AN1784 SMA428A SMA428A IrL 1540 N IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 AN1784

    SMA428A

    Abstract: AN-1619
    Text: AN1619 APPLICATION NOTE AN LNA OPTIMIZED FOR INPUT/OUTPUT RETURN LOSS AT 1.85GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for DCS Application f = 1.85 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.55


    Original     		PDF AN1619 85GHz SMA428A SMA428A AN-1619

    an1721

    Abstract: SMA428A SOT323-6 gp 940
    Text: AN1721 APPLICATION NOTE AN LNA OPTIMIZED AT 900 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GSM Application f = 900 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.4 dB Gain 25 dB RLin 8.5 dB RLout


    Original     		PDF AN1721 SMA428A SMA428A an1721 SOT323-6 gp 940

    BL 350-700

    Abstract: KTA2014 KTC4075
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4075 SOT-323 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z z z 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-323 KTC4075 OT-323 KTA2014 100mA, BL 350-700 KTA2014 KTC4075

    LG 2SC4116

    Abstract: sot-323 Marking LG 2sc4116 2SA1586 marking LG SOT323
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER


    Original     		PDF OT-323 2SC4116 2SA1586 100mA LG 2SC4116 sot-323 Marking LG 2sc4116 2SA1586 marking LG SOT323

    sot-323 Marking LG

    Abstract: LG 2SC4116 ly SOT-323 2SC4116
    Text: 2SC4116 SOT-323 Transistor NPN SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features — High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 — — — — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC4116 OT-323 OT-323 2SA1586 100mA sot-323 Marking LG LG 2SC4116 ly SOT-323 2SC4116

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER


    Original     		PDF OT-323 2SC4116 2SA1586 100mA

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PC4081 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor 2PC4081


    OCR Scan     		PDF 2PC4081 2PC4081 SC-70 2PA1576. 4081Q 4081S 115002/00/04/pp8

    B1219

    Abstract: AN 6752
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification 2PD1820A NPN general purpose transistor


    OCR Scan     		PDF 2PD1820A 2PD1820A B1219A 115002/00/02/pp8 B1219 AN 6752

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly PMST5088; PMST5089 NPN general purpose transistors Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors


    OCR Scan     		PDF PMST5088; PMST5089 SC-70; T5088 T5089 115002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly PMST6428; PMST6429 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 12 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors


    OCR Scan     		PDF PMST6428; PMST6429 PMST6429 SC-70; OT323 PMST6428 115002/00/03/pp8

    marking code 4D

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors


    OCR Scan     		PDF BC859W; BC860W BC860W BC850W 115002/00/04/pp8 marking code 4D

    T617

    Abstract: No abstract text available
    Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZU M T717 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc CONTI.5A * * 3 A P eak P u ls e C u rre n t E x c e lle n t H pE C h a ra c te ris tic s U p T o 3 A (p u ls e d )


    OCR Scan     		PDF Super323TM OT323 150mQat 100MHz ZUMT717 T617

    t718

    Abstract: t618
    Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ISSU E 1 - SEPTEM BER 1998 ZUMT718 - FEATU RES 500mW POWER D ISSIPA TIO N * lc CONT 1A * * * * 3 A Peak Pu lse C u rren t Exce lle n t H FE C h a ra cte ristics U p T o 3 A (p u lsed )


    OCR Scan     		PDF Super323TM OT323 ZUMT718 500mW 200mQ -10mA* -100m -100mA* -50mA, t718 t618

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSU E 1 - DECEMBER 1998_ FEATU RES * A v a la n c h e m ode operation * 50 A Peak a v a la n ch e current * Lo w in d u ctan ce p a cka g in g A P P L IC A T IO N S * La se r LE D d rive rs


    OCR Scan     		PDF OT323 ZUMT413 20MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e


    OCR Scan     		PDF OT323 100jj 15KHz ZUMT5179

    Untitled

    Abstract: No abstract text available
    Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )


    OCR Scan     		PDF Super323TM OT323 ZUMT619 500mW 160mQ 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )


    OCR Scan     		PDF Super323TM OT323 ZUMT618 125mOat1 100MHz 100mA

    ZUMT617

    Abstract: No abstract text available
    Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.5 A * * 5 A P eak P u ls e C u rre n t E x c e lle n t H FE C h a ra c te ris tic s U p T o 5 A (p u ls e d )


    OCR Scan     		PDF Super323TM OT323 ZUMT617 135mO 100MHz ZUMT617

    M 4 3171 opto

    Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
    Text: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


    OCR Scan     		PDF MBR6535 MBR6545 MBR6545 DO-35 M 4 3171 opto 9571 gh opto 3171 3171 opto SOT223 6 pin

    P381-A

    Abstract: No abstract text available
    Text: Who% H E W L E T T mirÆ P A C K A R D S u r f a c e M o u n t P IN D i o d e s in SO T-323 S C - 7 0 Technical Data H SM P-381A S eries H SM P-386A S eries H SM P-389A S eries Features Package Lead Code D escrip tion/A p p lications * D i o d e s O p t i m i z e d for:


    OCR Scan     		PDF T-323 P-381A P-386A P-389A SMP-381A HSMP-386A HSMP-389A RS-481, P381-A

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jun 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING • High current max. 500 mA


    OCR Scan     		PDF PMSTA42; PMSTA43 PMSTA93. STA42 STA43 MAM062 115002/00/02/pp8