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    LX5512ELQ Search Results

    LX5512ELQ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LX5512ELQ Microsemi InGaP HBT 2.4-2.5 GHz power amplifier. Original PDF
    LX5512E-LQ Microsemi InGaP HBT 2.4 - 2.5 GHz Power Amplifier Original PDF
    LX5512E-LQT Microsemi Amplifier, InGaP HBT 2.4-2.5GHz Power Amplifier, Tape And Reel Original PDF
    LX5512ELQ-TR Microsemi InGaP HBT 2.4-2.5 GHz power amplifier. Original PDF

    LX5512ELQ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LX5512E

    Abstract: LX5512E-LQ LX5512E-LQT
    Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm LX5512E-LQ LX5512E-LQT

    Untitled

    Abstract: No abstract text available
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g

    diode dc components m7 footprint

    Abstract: ofdm amplifier LX5512E LX5512E-LQ LX5512E-LQT 2.4 ghZ rf transistor OM5040
    Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm diode dc components m7 footprint ofdm amplifier LX5512E-LQ LX5512E-LQT 2.4 ghZ rf transistor OM5040

    LX5512E

    Abstract: LX5512E-LQ LX5512E-LQT
    Text: LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For 18dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 2 %, and consumes 120 mA total DC


    Original     		PDF LX5512E 18dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 18dBm LX5512E-LQ LX5512E-LQT

    Untitled

    Abstract: No abstract text available
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 45GHz 19dBm 130mA 19dBm 64QAM 54Mbps LX5512E

    LX5512E

    Abstract: LX5512ELQ LX5512ELQ-TR bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm LX5512ELQ LX5512ELQ-TR bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter

    bipolar transistor 2.4 ghz s-parameter

    Abstract: bipolar transistor 2.45 ghz s-parameter LX5512E LX5512ELQ LX5512ELQ-TR dc m7 footprint 2.45 Ghz power amplifier 30 db
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter LX5512ELQ LX5512ELQ-TR dc m7 footprint 2.45 Ghz power amplifier 30 db

    Untitled

    Abstract: No abstract text available
    Text: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 45GHz 19dBm 130mA 19dBm 64QAM 54Mbps LX5512E

    diode dc components m7 footprint

    Abstract: ofdm amplifier LX5512E LX5512E-LQ LX5512E-LQT
    Text: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin


    Original     		PDF LX5512E 19dBm 64QAM, 54Mbps) LX5512E 16-pin 11b/g 45GHz 19dBm diode dc components m7 footprint ofdm amplifier LX5512E-LQ LX5512E-LQT