LTS360P
Abstract: LTS-360 clts LTS-360R
Text: I IT C VIJI 0.36" Single Digit Numeric LED Displays LI I CL“ J WI LTS-360 Series •0.36 inch 9.14mm digit height •Continuous uniform segments. •Choices of five bright colors-red/bright red/green/orange/high efficiency red. •Low power requirement.
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LTS-360
LTS360P
clts
LTS-360R
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GE SCR Manual
Abstract: SCR Manual, General electric General electric SCR manual SCR nomenclature, General electric scr stack ge scr package back to back scr firing board scr firing ic for three phase bridge bridge of scr firing circuit rectifier three phase scr
Text: SCR LOW AND MEDIUM CURRENT STACKS Cl 012-13 C1112-13 C3512-13 N ow , for the first time, from th e o rig in a to r of the Silico n C o n tro lle d Rectifier, p a c k a g e d S C R b u ild in g blocks, com plete w ith S C R 's , com patible rectifiers, heat sinks, interconnections, a n d all re q uire d h a rd w a re in o n e p acka ge . R e q u ire s o n ly
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C1112-13
C3512-13
C3512UB1AD1
C3512UB1FD1
C3512UF1AD1
GE SCR Manual
SCR Manual, General electric
General electric SCR manual
SCR nomenclature, General electric
scr stack
ge scr package
back to back scr firing board
scr firing ic for three phase bridge
bridge of scr firing circuit
rectifier three phase scr
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Untitled
Abstract: No abstract text available
Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024
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2N6058
2N6059
2N6350
2N6351
14-PtN
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2N5449
Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Text: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO
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2N3694
2N5127
2N5131
2N5132
5N5451
TP5137
TP5139
TP5824
TP5825
TP5826
2N5449
MPS-K72
2N3693
2N5143
2N5447
k72 npn
k72 transistor
Three-Five
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Untitled
Abstract: No abstract text available
Text: .1134300 KENNEDY M S CORP KENNEDY -CM S> CORP 7fi 7 8 A' 0 0 0 1 3 DE~| 5134300 0000013 J “71— 11-01 WIDE BANDWIDTH, HIGH SLEW RATE HYBRID BUFFER AMPLIFIERS Models 350, 360 SLEW RATE: 2000V/jiSec Min. TIME D E L A Y : 1 nSec., 2.5 nSec. max. F U L L FR EQ U EN CY OUTPUT: 20 MHz at ±10 V
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000V/jiSec
L-STD-883
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GE SCR Manual
Abstract: GE SCR 1000 AMP SCR 214 scr stack General electric SCR scr 106 GE SCR 1000 SCR Phase Control IC SCR nomenclature, General electric SCR 60A 500V
Text: SCR Medium & High Current Modules NOMENCLATURE CIO 12BA1AD1 is a 200V, fu ll wave back to back bridge connected CIO c e lls on type 12 F ins, capable o f c o n t r o llin g 4.7 amp average per SCR in free a ir o r 6.2 amp average per ce ll with 1000 lin e a r feet per minute forced a ir.
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12BA1AD1
C10JI
1N13414-46A
1N1341A-46A
1N2154-59
1N3292-96
1N3289-92
C3512UB1AD1
C3512UB1FD1
C3512UF1AD1
GE SCR Manual
GE SCR 1000 AMP
SCR 214
scr stack
General electric SCR
scr 106
GE SCR 1000
SCR Phase Control IC
SCR nomenclature, General electric
SCR 60A 500V
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GR 1815
Abstract: 2SA950Y 1815gr 2SC1815Y 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y BF594
Text: BHARAT ELEK/ SEPII COND DI M7E B • m 3 S 3 ciö O O OO Dl l T54 ■ BEL I jz*2 7 - ò ] VCE Si VCEO D e v ic e No VCBO V ebo V o lts V o lts V o lts min mm mm hFE le at bias min /m ax mA VCE 1 CM V o lts mA m ax P lo t mW max IC B O typ Sat V o lts ÍT
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BF594
BF596
27min.
BF597
37min.
2SC1815Y
BC178B
GR 1815
2SA950Y
1815gr
2SC2229Y
2SC2229-Y
2SA10150
1959Y
2SA562Y
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SL 100 NPN Transistor
Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE
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THC-2484
THC-4123
THC-4124
THC-4125
THC-4126
THC-40D4
THC-40D5
THC-41D4
THC-41D5
SL 100 NPN Transistor
bc337-40 npn transistor
transistor TE 901
Transistor BC239c
SL 100 power transistor
of transistor sl 100
Transistor BC413C
TRANSISTOR SL 100
te 901 pnp Transistor
sl 100 transistor
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6l6gb
Abstract: tube 6L6 6L6 tube 6l6gb tube harrison 248 6l6, tube
Text: BEAM POWER TUBE GE NE RAL DATA E le c tri c a l: H e a t e r , fo r Un i p o t e n t i al C a th o d e : V o l t a g e . 6.3 ac o r d c v o l t s C u r r e n t . 0.9 ajnp D ir e c t In te r e le c t ro d e C a pa cita nce s A p p r o x . :0
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B7-12)
92CS-9252RI
92CM-4580R2
GRID-N22
92CM-458IR2
92CM-4966R2
92CM--4608RI
6l6gb
tube 6L6
6L6 tube
6l6gb tube
harrison 248
6l6, tube
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IN6284a
Abstract: in6285A IN6283A IN6282A IN6277 IN6267A IN6292A IN5908 IN6275A IN6286A
Text: POWERZORB L8 Series 1.5 KW Transient Absorption Zener Diodes A range of unipolar protection diodes in a moulded D027A package. P s u rg e -1.5KW; — ;— — !- '•-/1 . . ~*i<
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D027A
IN6284a
in6285A
IN6283A
IN6282A
IN6277
IN6267A
IN6292A
IN5908
IN6275A
IN6286A
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Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y 9 O D O S POWER MOS IV APT4016BN 400V 31.0A 0.16Q APT4018BN 400V 29.0A 0.180 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT APT 4016BN
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APT4016BN
APT4018BN
4018BN
4016BN
APT4016/4018BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: VARACTOR TUNING DIODES C a p acitan ce Figure o f M erit at v„=4 o v Q at 4 0 V and and SO MHz f»1 0 M Hz i :4 E 9 lC . . P ro d u c t H ighlights P a rt N u m b er l l l l l l l l l l l i 1111 § 1 1 W C733 W C736 VVC741 iiS lis C a p a c ita n c e R atio
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VVC741
MV1401
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BEL 100N TRANSISTOR
Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ
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143S3Tfl
2N2218
285max
2N2219A
2N3501TV
20min.
22min.
2N918
2N929
BEL 100N TRANSISTOR
BEL100N
bel 100n transistor npn
BEL 100N
2n 2222a transistor
BEL100
TRANSISTOR bd 657
BF200 transistor
transistor BF 245
bd115
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Untitled
Abstract: No abstract text available
Text: 1N225 INTERNATIONAL thru S e m ic o n d u c to r , I n c . 1N229A Double Ended Zener SINGLE ENDED CAN I •0 65 /.075 1.52/1.91 t ELECTRICAL CHARACTERISTICS at 25°C N B re a k d o w n V o lta g e R e v e rs e C u rre n t at V R 25° C JE D EC P a rt V , M in
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1N225
1N229A
000PSM0
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD
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IXSH10N60
IXSH10N60A
O-247
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PDF
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GES6220
Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014 GES6015 GES6016 GES6017 GES6218
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GES5822
GES5823
GES5824
GES5825
GES5826
GES5827
GES5828
GES6000
100-C
TA-25
GES6220
GES6001
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PDF
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2N3643
Abstract: 2N3844 transistor 2N3 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
2N3844
transistor 2N3
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PDF
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BAL0105-100
Abstract: J3315 Scans-00115697
Text: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved
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BAL0105-100.
J05-100â
560mW
BAL0105-100
J3315
Scans-00115697
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PDF
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30n60b
Abstract: B2045
Text: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60B
30N60C
30n60b
B2045
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y ' O D APT4016SN O s 400V 31.0A 0.160 POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT4016SN
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APT4016SN
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STM TO 247 package inductance
Abstract: No abstract text available
Text: H ÎYY^s JL flHVw A- Ik»!? HiPerFET Power MOSFETs V DSS IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V D DS on ^D25 76 76 76 76 A A A A 11 12 11 12 mQ
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N06-11
N06-12
N07-11
N07-12
O-247
N06-11
N06-12
N07-11
N07-12
STM TO 247 package inductance
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UL497B
Abstract: GALVANOMETER UL-497B L497B MSV101A MSV101B MSV101C MSV101D MSV101E MSV101G
Text: M S V 1 0 1 A thru M SV 1 01 G MicrosemiCorp. j j SANTA ANA, CA T he diod e experts SCOTTSDALE, A I For more information call: / 602 941-6300 and M S V 2 0 1 A thru M SV701A Features The MSV series consists o f a matched set of silicon junctions configured for
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MSV101A
MSV101G
MSV201A
MSV701A
MSV101G
M5V101A,
MSV201,
UL497B
GALVANOMETER
UL-497B
L497B
MSV101B
MSV101C
MSV101D
MSV101E
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PDF
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE DIODES, C1 CAN M inim um B reakdow n P a rt Num ber V . . . V C ontinuous laxlm um A ve ra g e I l l l l f i R everse Forw ard C u rre n t C u rre n t 1. <UA) Forward Voltage Drop T .« 2 5 « C T„»1 d o ° c v* (V olts) ta |m A ) V, (V o lts)
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THC-4413
Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic
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THC-95
THC-2894
THC4258
THC-4258A
THC-A-20
THC-2944
THC-2945
THC-4413
sj 2907
4148 diode
diode st 4148
TRANSISTOR 4148
THC-5818
THC-2369
THC-2369A
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