Untitled
Abstract: No abstract text available
Text: TWR A-Series www.murata-ps.com 12-15W, Triple Output DC-DC Converters Featurinng Mura Featuring Murata ata Pow Power wer Solut Solutions' tions' uultra-wide, ltra-wiide, 18-72V, in input voltage range, this this Family Fam mily of A-Series, A-Seriess, TWR triple-output
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2-15W,
8-72V,
12/15V
250mA
TWR12-15
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ultronix ksm
Abstract: No abstract text available
Text: A COMPANY M O DEL K SM M e ta l Foil R esisto rs OF HHHÜT ULTRONIX Leadless Foil Chip, U ltra Precise and U ltra Stable Offering the best combination of tight tolerance, low temperature coefficient and high speed at competitive pricing, the planar resistors of
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1701 ~RN1706 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1701, RIM1702, RN1703, RN1704, RN1705, RN1706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5
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RN1701
RN1706
RN1701,
RIM1702,
RN1703,
RN1704,
RN1705,
RN1701
RN1702
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5
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RN2701
RN2706
RN2701,
RN2702,
RN2703,
RN2704,
RN2705,
RN2701
RN2702
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4988 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4988
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Untitled
Abstract: No abstract text available
Text: CRYSTAL CLOCK OSCILLATORS CITIZEN SMD • Ceramic Package CSX-325F SERIES 2000pcs/reel •FEATURES • H igh-density SM D type. • U ltra-light w eight and ultram iniature size. • Low current consum ption. • Suitable for various applications such as
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CSX-325F
2000pcs/reel
10TTL
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Untitled
Abstract: No abstract text available
Text: RN1901,1902,1903 RN1904,1905,1906 RN1901 Unit in mm 2.1±0.1 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ±0.1 •lEE Including Two Devices in US6 (U ltra Super Mini Type with 6 leads) W ith Built-in Bias Resistors
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RN1901
RN1904
RN1901)
RN2901--RN2906
RN1902
RN1903
RN1905
RN1906
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4981 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4981
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN1707-RN1709 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1707, RN1708, RN1709 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AN D DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with 5
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RN1707-RN1709
RN1707,
RN1708,
RN1709
RN2707
RN2709
RN1707
RN1708
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4990 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RMlQOn SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ±0.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4990
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20DL2C41A
Abstract: No abstract text available
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED O SWITCHING TYPE POWER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage Average Output Rectified C urrent U ltra F ast Reverse-Recovery Time Low Switching Losses and Output
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L2C41A
20DL2C41A
20FL2C41A
20GL2C41A
20GL2C41A)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4984
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33460/D MOTOROLA MC33460 MC33461 Under Voltage Detector Series The MC33460 and MC33461 series are u ltra -lo w power CMOS under-voltage detectors with very tight threshold accuracy specifically designed for accurate monitoring of power supplies. The devices are
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MC33460/D
MC33460
MC33461
MC33460
MC33461
MC33460/1
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Untitled
Abstract: No abstract text available
Text: TO SH IB A RN4989 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 2.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4989
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN4986 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4986 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4986
47kfi
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN4983 TOSHIBA TRANPSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4983 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4983
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN4984 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4984 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 (U ltra Super Mini Type
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RN4984
47kil
47kfl
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Untitled
Abstract: No abstract text available
Text: MOTOIROILA 0rderthi docum ent SEMICONDUCTOR TECHNICAL DATA by MURP20020CT/D Preliminary Data Sheet M URP20020CT M URP20040CT POWERTAP II U ltra fa s t SWITCHMODE Pow er R ec tifiers Motorola Preferred Devices . . . designed for use in switching power supplies, inverters, and as free
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MURP20020CT/D
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RW69V
Abstract: No abstract text available
Text: A COMPANY OF MODELS HACW-2, HADW-2, M-51 Oxide & Carbon Film Resistors U ltra High Value, Special Purpose FEATURES • Ultra high values with superior stability and consistent voltage coefficient • Small size • M5-1 hermetically sealed, minimizing effects of moisture
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10G-1T
100M-10T
RW69V
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Untitled
Abstract: No abstract text available
Text: MT5C2568 883C 32K X 8 SRAM AUSTIN SEMICONDUCTOR, INC. Í-T 7 ~ \ MILITARY SRAM 32Kx 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • MIL-STD-883, Class B • R adiation tolerant consult factory FEATURES • • • • • • U ltra h igh speed 12,15 ns
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MT5C2568
MIL-STD-883,
IL-STD-883
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marking J3U
Abstract: No abstract text available
Text: RN4901 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm ü.l±U.l .1.25 Jr 0.1 • Including Two Devices in US6 (U ltra Super Mini Type with 6
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RN4901
marking J3U
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Untitled
Abstract: No abstract text available
Text: TDSONIX SERIES 513 VAR!-Thin 100 WVdc CERAMIC TRIMMERS U ltra m in ia tu re Outstanding Features • Only .196"/4.98mm diameter • Monolithic Rotor design offers opti x ,080'72.03mm high mum stability for higher capacitance ranges. Eliminates need to use un
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Untitled
Abstract: No abstract text available
Text: UXA 0204 UXB 0207 Metal Film Resistive Layer 164 Leaded R esistor Products U ltra P re cisio n Protective Lacquer BEYSCHLAG Catalogue 1999 Leaded Resistor P roducts ÌJ UXA / UXB Ultra Precision • Superior Thin Film Technology • Exceptional Low TC: 0 2 . 10 ppm/K
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 1SV306 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 3 0 6 VCO FOR UHF BAND RADIO Small Package U ltra Low Series Resistance : r5 = 0 .2 0 0 Typ. MAXIMUM KÄliNüS i i a = 2b°Lj SYMBOL CHARACTERISTIC Reverse Voltage
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1SV306
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