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    LT230 Price and Stock

    Littelfuse Inc ALT230-S

    RELAY IMPULSE SPDT 230V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ALT230-S Bulk 1 1
    • 1 $72.1
    • 10 $62.981
    • 100 $55.0148
    • 1000 $55.0148
    • 10000 $55.0148
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    Mouser Electronics ALT230-S 16
    • 1 $72.1
    • 10 $62.98
    • 100 $55.01
    • 1000 $55.01
    • 10000 $55.01
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    Newark ALT230-S Bulk 1
    • 1 $63.9
    • 10 $55.86
    • 100 $47.83
    • 1000 $47.83
    • 10000 $47.83
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    TTI ALT230-S Bulk 1
    • 1 $63.9
    • 10 $55.86
    • 100 $52.33
    • 1000 $52.33
    • 10000 $52.33
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    Master Electronics ALT230-S 8
    • 1 $77.41
    • 10 $67.01
    • 100 $59.68
    • 1000 $57.56
    • 10000 $57.56
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    Ozdisan Elektronik ALT230-S
    • 1 $151.9094
    • 10 $151.9094
    • 100 $151.9094
    • 1000 $151.9094
    • 10000 $151.9094
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    Littelfuse Inc ALT230-X-SW

    RELAY IMPULSE DPDT 230V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ALT230-X-SW Bulk 1
    • 1 $123.84
    • 10 $123.84
    • 100 $123.84
    • 1000 $123.84
    • 10000 $123.84
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    Mouser Electronics ALT230-X-SW 2
    • 1 $111.56
    • 10 $101.83
    • 100 $95.83
    • 1000 $95.83
    • 10000 $95.83
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    Newark ALT230-X-SW Bulk 1
    • 1 $99.71
    • 10 $85.73
    • 100 $79.65
    • 1000 $79.65
    • 10000 $79.65
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    TTI ALT230-X-SW Bulk 1
    • 1 $110.44
    • 10 $90.51
    • 100 $85.21
    • 1000 $85.21
    • 10000 $85.21
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    Ozdisan Elektronik ALT230-X-SW
    • 1 $227.173
    • 10 $227.173
    • 100 $227.173
    • 1000 $227.173
    • 10000 $227.173
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    Samtec Inc DW-41-09-L-T-230

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-41-09-L-T-230 Bulk 1
    • 1 $33.14
    • 10 $33.14
    • 100 $33.14
    • 1000 $33.14
    • 10000 $33.14
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    Samtec Inc DW-04-09-L-T-230

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-04-09-L-T-230 Bulk 1
    • 1 $5.73
    • 10 $5.73
    • 100 $5.73
    • 1000 $5.73
    • 10000 $5.73
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    Samtec Inc DW-17-09-L-T-230

    FLEXIBLE BOARD STACKING HEADER W
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-17-09-L-T-230 Bulk 1
    • 1 $16.56
    • 10 $16.56
    • 100 $16.56
    • 1000 $16.56
    • 10000 $16.56
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    Find more LT230 price and stock on Findchips.com

    LT230 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LT230 Littelfuse Switching Gas Discharge Tubes - Gas Plasma Voltage Dependent Switches Original PDF
    LT230 Sharp GaAs Hall IC for Noncontact Switch (Unidirestional magnetic field-type) Original PDF
    LT230A Littelfuse Gas Discharge Tube Arresters (GDT), Circuit Protection, GAS TRIGGER TUBE 230V AXIAL T/R Original PDF
    LT230A Sharp GaAs Hall IC for Noncontact Switch (Unidirestional magnetic field-type) Original PDF
    LT230A-B Littelfuse Gas Discharge Tube Arresters (GDT), Circuit Protection, GAS TRIGGER TUBE 230V AXIAL BULK Original PDF
    LT230C Littelfuse Gas Discharge Tube Arresters (GDT), Circuit Protection, GAS TRIGGER TUBE 230V CORE Original PDF
    LT230SM Littelfuse Gas Discharge Tube Arresters (GDT), Circuit Protection, GAS TRIGGER TUBE 230V SMD Original PDF

    LT230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT2306

    Abstract: No abstract text available
    Text: LT2306 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306 is the N-Channel logic enhancement mode power field ● RDS ON ≦37mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦49mΩ@VGS=4.5V


    Original     		PDF LT2306 LT2306 300us, OT-23

    p-channel sot-23 .5A

    Abstract: lt2307 P-CHANNEL 30V DS MOSFET
    Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet FEATURES GENERAL DESCRIPTION The LT2307 is the P-Channel logic enhancement mode power 1. -30V/-3.2A, RDS(ON) =63mÙ@VGS=-10V field effect transistors, using high cell density, DMOS trench 2. -30V/-2.5A, RDS(ON) =80mÙ@VGS=-4.5V


    Original     		PDF LT2307 -30V/-3 -30V/-2 OT-23) OT-23 p-channel sot-23 .5A P-CHANNEL 30V DS MOSFET

    LT2301A

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		PDF LT2301A 300us, 2007-Ver3 OT-23

    Untitled

    Abstract: No abstract text available
    Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V


    Original     		PDF LT2306A LT2306A 2007-Ver4

    LT2301A

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		PDF LT2301A 2007-Ver3

    LT230A

    Abstract: No abstract text available
    Text: Hall IC LT230A LT230A GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type 0.95 Z X 0.4 0.4 S 2.9±0.2 0.85 0.6 (Unit : Fmm) 2.9±0.2 1.9 0.4 • Features ¡Same temperature coefficient of magnetic flux density as ■ Outline Dimentions


    Original     		PDF LT230A LT230A

    LT2307

    Abstract: No abstract text available
    Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMO S trench technology. This high density process is especially tailored


    Original     		PDF LT2307 -30V/-3 -30V/-2 APPL20 300us, OT-23

    Untitled

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		PDF LT2301A 300us, OT-23

    LT230A

    Abstract: No abstract text available
    Text: Hall IC LT230A GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type LT230A • Features Same temperature coefficient of magnetic flux density as a magnet ● operation by small magnet due to high sensitivity Operating point < 20mT ● Combining a GaAs Hall device and an IC in a compact


    Original     		PDF LT230A LT230A

    LT2306

    Abstract: No abstract text available
    Text: LT2306 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306 is the N-Channel logic enhancement mode power field ● RDS ON ≦37mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦49mΩ@VGS=4.5V


    Original     		PDF LT2306 LT2306

    Untitled

    Abstract: No abstract text available
    Text: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		PDF LT2301 LT2301 300us, OT-23

    LT2301

    Abstract: LT230
    Text: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		PDF LT2301 LT2301 300us, 2008-Ver1 OT-23 LT230

    P-CHANNEL 30V DS MOSFET

    Abstract: LT2307 p-channel sot-23 .5A
    Text: LT2307 Pb-free P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2307 is the P-Channel logic enhancement mode power field effec t transistors, using high cell density, DMO S trench technology. This high density process is especially tailored


    Original     		PDF LT2307 -30V/-3 -30V/-2 P-CHANNEL 30V DS MOSFET p-channel sot-23 .5A

    LT2301

    Abstract: 20A SOT-23
    Text: LT2301 P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301 is the P-Channel logic enhancement mode power field ● RDS ON ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V


    Original     		PDF LT2301 LT2301 2008-Ver1 20A SOT-23

    Ta7070

    Abstract: No abstract text available
    Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V


    Original     		PDF LT2306A LT2306A 380us, 2007-Ver4 OT-23 Ta7070

    Untitled

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 300us, 2007-Ver1 OT-23

    LT2306

    Abstract: n-channel mosfet SOT-23
    Text: LT2306 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306 is the N-Channel logic enhancement mode power field ● RDS ON ≦37mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦49mΩ@VGS=4.5V


    Original     		PDF LT2306 LT2306 OT-23) 380us, OT-23 n-channel mosfet SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON ≦30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦35mΩ@VGS=4.5V


    Original     		PDF LT2306A LT2306A 380us, OT-23

    LT2302

    Abstract: No abstract text available
    Text: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V


    Original     		PDF LT2302 LT2302 2007-Ver1

    ES50N18LA2

    Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
    Text: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure


    Original     		PDF PTX19CL-BS 12N9-4B-1 CB14-A2 CB12C-A CB30CL-B PTX14L-BS ES50N18LA2 YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210

    plasma ignition

    Abstract: capacitive discharge ignition Ignition Transformer diode lt 316 LT230 ignition circuits "IGNITION TRANSFORMERS" Electronic ballast HID LT800 sidac trigger circuit
    Text: Switching Gas Discharge Tubes Gas Plasma Voltage Dependent Switches RoHS LT Series The LT Series is a 2-terminal bi-directional, voltage triggered switch is designed for ignition circuits used in high pressure HID lighting. Switching voltages for the devices are fixed depending


    Original     		PDF 1000Vdc 330nF 10-20mA, 10-30mA) plasma ignition capacitive discharge ignition Ignition Transformer diode lt 316 LT230 ignition circuits "IGNITION TRANSFORMERS" Electronic ballast HID LT800 sidac trigger circuit

    LT3600T

    Abstract: ta602ld EATON CA08101001E HLD3600 hld3600f eaton ld3600 LDC-2500 LD3600 LD3600F HLD3400
    Text: Series C Molded Case Circuit Breakers 125 – 600 Amperes 12-102 June 2005 L-Frame Vol. 1, Ref. No. [0614] Product Selection Table 12-175. Types LD, HLD and LDC Thermal-Magnetic Circuit Breakers with Interchangeable Trip Units Maximum Continuous Ampere Rating


    Original     		PDF LD2600F HLD2600F LDC2600F HLD3600F LDC3600F HLD4600F LDC4600F LD3600F LD4600F CA08101001E LT3600T ta602ld EATON CA08101001E HLD3600 hld3600f eaton ld3600 LDC-2500 LD3600 LD3600F HLD3400

    HT12E HT12D

    Abstract: Panasonic RELAY Cross Reference NEC OMRON N80C196KC16 MOS248 TDA2086A GOULD 500 COLOUR LCD DIGITAL STORAGE OSCILLOSCOPE 1NA114AP ICM72171 SL443A nec matrix Vacuum tube display
    Text: Issued July 1996 021-928 Data Packs A-K RS data sheet/semiconductor manufacturers data sheet index Data Sheet Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.


    Original     		PDF

    sharp1

    Abstract: No abstract text available
    Text: Hall 1C LT230A LT230A • GaAs Hall IC for Noncontact Switch Unidirestional magnetic field-type Features • Same temperature coefficient o f magnetic flux density as Outline Dimentions (Unit : Fmm) a magnet • O peration by sm all m agnet due to high se n s itiv ity


    OCR Scan     		PDF LT230A sharp1