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    LRP PACKAGE Search Results

    LRP PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    LRP PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HRF22

    Abstract: Hitachi DSA00358
    Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22


    Original     		PDF HRF22 ADE-208-163D HRF22 Hitachi DSA00358

    HRF32

    Abstract: Hitachi DSA00358 Hitachi DSA0035
    Text: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32


    Original     		PDF HRF32 ADE-208-164D HRF32 Hitachi DSA00358 Hitachi DSA0035

    Hitachi DSA00279

    Abstract: mark SIN
    Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark


    Original     		PDF HRF22 ADE-208-163D HRF22 10msec Hitachi DSA00279 mark SIN

    HZF22BP

    Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129B HZF27BP HZF36CP HZF15CP HZF22BP HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 40V, IO = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information


    Original     		PDF HRF22 ADE-208-163B 10msec Hitachi DSA001653

    ADE-208-129

    Abstract: BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129 Z Preliminary Rev. 0 Aug. 1993 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129 ADE-208-129 BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20

    Hitachi DSA0077

    Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
    Text: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information


    Original     		PDF ADE-208-163C HRF22 10msec HRF32 Hitachi DSA0077 Hitachi DSA00770 HRF22 HRF32 mark 32

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 90V, IO = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information


    Original     		PDF HRF32 ADE-208-164B 12Vmax. 10msec Hitachi DSA001653

    HZF16BP

    Abstract: code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129A HZF15CP HZF16BP code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18

    BP 34 datasheet

    Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Jul. 1997 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129B BP 34 datasheet HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22

    lazer

    Abstract: lazer diode
    Text: HRF32-Silicon Schottky Barrier Diode for High Frequency Rectifying Features Outline • Good for high-frequency rectify for Vr =90V, Io=1.0A, Output voltage=12Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		PDF HRF32 12Vmax. HRF32 10msec lazer lazer diode

    Untitled

    Abstract: No abstract text available
    Text: HRF22-Silicon Schottky Barrier Diode for High Frequency Rectifying Features Outline Good for high-frequency rectify for V r =40V, Io=l .OA, Output voltage=6Vmax. LRP structure ensures higher reliability. Cathode mark j^ark Ordering Information


    OCR Scan     		PDF HRF22 10msec HRF22

    HZF10

    Abstract: HZF6.8 ADE-208-129B
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF ADE-208-129B HZF27 HZF24 HZF22 HZF20 HZF18 HZF16 HZF15 HZF13 HZF12 HZF10 HZF6.8

    F 82 bp

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features Outline • Wide spectrum from 1.88 V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF ADE-208-129B HZF10 HZF11 HZF27 HZF24 HZF22 HZF20 HZF18 HZF16 HZF15

    Untitled

    Abstract: No abstract text available
    Text: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 40V, I0 = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		PDF HRF22 ADE-208-163B 10msec

    HZF10

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208- 129B Z Rev 2 Features • W ide spectrum from • 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF ADE-208- HZF30 HZF33 HZF36 HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF10

    LRP PACKAGE

    Abstract: CP4020 HZF Series
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF ADE-208-129A LRP PACKAGE CP4020 HZF Series

    Untitled

    Abstract: No abstract text available
    Text: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 90V, I0 = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		PDF HRF32 ADE-208-164B 12Vmax. 10msec

    LRP package PACKAGE

    Abstract: lazer
    Text: ADE-208-164C Z HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r=90V, Io=1.0A, Output voltage=12Vmax. • LRP structure ensures higher reliability. Cathode mark


    OCR Scan     		PDF HRF32 12Vmax. ADE-208-164C HRF32 10msec LRP package PACKAGE lazer

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.


    OCR Scan     		PDF ADE-208-163B HRF22 10msec HRF22

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    1SS106

    Abstract: 1SS119 1SS172 1SS108
    Text: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©


    OCR Scan     		PDF 1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS106 1SS119 1SS172 1SS108

    1SS106

    Abstract: pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277
    Text: Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C High voltage switching HSM83 Glass SMD2 Insertion Type URP DO-35 MHD LLD 1N4148 1 S 2 0 7 4 '1 1S2075 *1


    OCR Scan     		PDF DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C 1N4148 1S2075® 1S2076 1SS106 pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277