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    TB235

    Abstract: No abstract text available
    Text: Juune 11, 20144 T TF235 Frequenccy=30-5122 MHz Pout=100W Gain= = 19-21.5 dB Vd ds=28Vdc Id dq=1.2A Efficiency= 48-551% L LR2401 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m June 11, 2014 180.0 22.5 135.0


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    PDF TF235 28Vdc LR2401 TB235 28Vdc, TCJE106M063R0100 EE-TK1V470P 100r18x335KV4E

    LR2401

    Abstract: LDMOS
    Text: polyfet rf devices LR2401 General Description This device is part of Polyfet's latest family of 28VDC LDMOS devices. Being an unmatched device and having low capacitances makes it ideal for broad band applications such as communications and broadcast. It is also suitable for


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    PDF LR2401 28VDC 1-1100MHz LR2401 LDMOS

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


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    PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet