Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LR12010T0200J Search Results

    LR12010T0200J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN11130

    Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original
    CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 AN11130 Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00 PDF

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original
    CLF1G0035S-100 CLF1G0035S-100 PDF

    I1228

    Abstract: No abstract text available
    Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original
    CLF1G0035-100 CLF1G0035-100 I1228 PDF

    30221

    Abstract: LR12010T0200J
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original
    CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 30221 LR12010T0200J PDF

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation


    Original
    CLF1G0035-100; CLF1G0035S-100 CLF1G0035-100 CLF1G0035S-100 1G0035S-100 PDF