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    LPDDR 16GB Search Results

    LPDDR 16GB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HXR6104-EVB Renesas Electronics Corporation 16Gb/s Limited TIA Receiver Visit Renesas Electronics Corporation
    HXR6112-DNT Renesas Electronics Corporation 16Gb/s Limited TIA Receiver Visit Renesas Electronics Corporation
    HXR6112-EVB Renesas Electronics Corporation 16Gb/s Limited TIA Receiver Visit Renesas Electronics Corporation
    HXR6101-DNT Renesas Electronics Corporation 16Gb/s Limited TIA Receiver Visit Renesas Electronics Corporation
    HXR6104-DNT Renesas Electronics Corporation 16Gb/s Limited TIA Receiver Visit Renesas Electronics Corporation

    LPDDR 16GB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP

    MT29F4G08ABA

    Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08

    LPDDR2 PoP

    Abstract: LPDDR2 micron lpddr2 lpddr2 datasheet 216-ball LPDDR lpddr2 nand mcp Micron 512MB nand FLASH 136-Ball 168-ball LPDDR Micron NAND
    Text: A Perfect Match for Matchless Performance Micron Multichip Packages Form Factor, Speed, Power. Choose All That Apply. Form factor, speed, power—your mobile customers want all three. With Micron’s MCPs, you can respond to customers’ everincreasing demands without compromising leading-edge performance. Mix and match devices, configurations, and package


    Original     		PDF

    Micron Technology

    Abstract: No abstract text available
    Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and


    Original     		PDF 20Note/DRAM/TN4102 TN-41-04: TN-41-13: TN-46-02: TN-46-06: TN-46-11: TN-46-14: TN-47-19: TN-47-20: Micron Technology

    movinand

    Abstract: samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash
    Text: Samsung Fusion Semiconductors Samsung Fusion Memory Software Flash DRAM The Next-Generation Technology for High-Performance Mobile Applications SRAM Logic What is Fusion Memory? As consumers continue their insatiable demand for higher-performance, ever-smaller


    Original     		PDF BR-07-MEM-001 movinand samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash

    NT6TL32M

    Abstract: No abstract text available
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		PDF 512Mb NT6TL16M32AQ/ NT6TL32M16AQ NT6TL32M

    hynix lpddr2

    Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		PDF 512Mb NT6TL16M32AQ/ NT6TL32M16AQ hynix lpddr2 Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2

    hynix lpddr2

    Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
    Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


    Original     		PDF NT6TL64M32AQ -64Meg 64M32 -168-ball hynix lpddr2 ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory

    NT6TL128M32AQ-G1

    Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL128M32AQ-G1 NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2

    NT6TL256T32AQ

    Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL256T32AQ hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16160A IS43/46LD32800A 256Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION JULY 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16160A IS43/46LD32800A 256Mb 10MHz 533MHz 20Mbps 1066Mbps temperaturD16160A-3BLA2 IS46LD32800A-3BLA2 IS46LD16160A-25BLA2

    46LD16640A

    Abstract: LPDDR2 SDRAM
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD32320A-3BLA2 IS46LD32320A-3BPLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2 46LD16640A LPDDR2 SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16320A IS43/46LD32160A 512Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION APRIL 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16320A IS43/46LD32160A 512Mb 10MHz 533MHz 20Mbps 1066Mbps temperatu6320A-3BLA2 IS46LD32160A-3BLA2 IS46LD16320A-25BLA2

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm


    Original     		PDF 512Mb: MT42L32M16D1 09005aef8467caf2

    LPDDR2-1066

    Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
    Text: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die


    Original     		PDF MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 240-ball 09005aef84645b7c LPDDR2-1066 micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D

    Untitled

    Abstract: No abstract text available
    Text: 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 121-ball 134-ball 168-ball 09005aef84d56533

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2 121-ball 134-ball 09005aef84d56533

    MT42L16M32

    Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		PDF 512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 MT42L16M32 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2

    MT42L16M32D1

    Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		PDF 512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball

    MT42L32M32D2

    Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
    Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 09005aef84d56533 MT42L32M32D2 micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32

    Untitled

    Abstract: No abstract text available
    Text: 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type


    Original     		PDF 512Mb MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 121-ball 134-ball 09005aef84d56533