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    LP701 Price and Stock

    Toshiba America Electronic Components TLP701(TP,F)

    OPTOISO 5KV 1CH GATE DVR 6SDIP
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    Toshiba America Electronic Components TLP701F(F)

    OPTOISO 5KV 1CH GATE DVR 6SDIP
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    Toshiba America Electronic Components TLP701AF(F)

    OPTOISO 5KV 1CH GATE DVR 6SDIP
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    Toshiba America Electronic Components TLP701HF(F)

    OPTOISO 5KV 2CH GATE DVR 6SDIP
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    Toshiba America Electronic Components TLP701H(TP,F)

    X36 PB-F PHOTOCOUPLER SMD BULK J
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    EBV Elektronik TLP701H(TP,F) 41 Weeks 1,500
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    LP701 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LP701 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF

    LP701 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    PDF LP701

    LP701

    Abstract: LDMOS
    Text: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    PDF LP701 LP701 LDMOS

    LP701

    Abstract: No abstract text available
    Text: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original
    PDF LP701 LP701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original
    PDF LP701

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original
    PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    DTM180AA

    Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
    Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS


    Original
    PDF 200mW 100mW DTM180AA DT-408 STD8018A LP05018 LS1012 DTM180AB

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original
    PDF 200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941

    Untitled

    Abstract: No abstract text available
    Text: ^EDL EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module \Features The EDI8F8512C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or 256Kx4 high speed Random Access Memory mounted on a multi-layered epoxy laminate (FR4) sub­


    OCR Scan
    PDF 512Kx8 EDI8F8512C 512KxS 100ns EDI8F8512LP EDI8F8512C 4096K 128Kx8 256Kx4

    Untitled

    Abstract: No abstract text available
    Text: W D EDI88257CA \ 256Kx8 Static Ram ELECTRONIC DESIGNS, INC. 256m Static RAM CMOS, Monolithic Features 256Kx8 bit CMOS Static Random Access Memory The EDI88257CA is a 2 megabit Monolithic CMOS Static • Access Times: 2 0 ,2 5 ,3 5 ,4 5 and 55ns RAM. • Data Retention Function LP version


    OCR Scan
    PDF EDI88257CA 256Kx8 EDI88257CA EDI8M8257C. 512Kx8 EDI88512CA. EDI88257LPA) MIL-PRF-38535. EDI88257CA25CB

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Module iF eatures The EDI8F8512C is a 4096K bit CMOS Static RAM based 512Kx8 bit CMOS Static on four 128Kx8 or 256Kx4 high speed Random Access Memory mounted on a multi-layered epoxy laminate (FR4) sub­


    OCR Scan
    PDF EDI8F8512C 512KxS 512Kx8 100ns I8F8512LP EDI8F8512C 4096K 128Kx8 256Kx4

    15X01

    Abstract: EDI8F8512C EDI8F8512C20M6C EDI8F8512C25M6C EDI8F8512C35M6C EDI8F8512C70BSC EDI8F8512LP TCW50 EC09
    Text: ^EDI EDI8F8512C 512KxS Static Ram ELECTRONIC DESIGNS. INC 512Kx8 Static RAM CMOS, Module ¡Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multi-layered epoxy laminate (FR4) sub­


    OCR Scan
    PDF EDI8F8512C 512Kx8 100ns EDI8F8512LP) 55-100ns) 20-35ns) EDI8F8512C 4096K 15X01 EDI8F8512C20M6C EDI8F8512C25M6C EDI8F8512C35M6C EDI8F8512C70BSC EDI8F8512LP TCW50 EC09