pnp germanium to36
Abstract: NTE330 Germanium power
Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.
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NTE330
NTE330
pnp germanium to36
Germanium power
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SMO-14
Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication
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MIL-S-19500A1B(
2N425
2Nb26
-AO07
SMO-14
SLG 2016 D
2SK26
2N42
N4 TAM
marking aaae
2n427
GERMANIUM SMALL SIGNAL TRANSISTORS
2N426
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NTE158
Abstract: germanium pnp transistor Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium pnp transistor
Germanium power
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nte102
Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Text: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:
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NTE102
NTE103
200mV
nte102
NTE103
vpt 20
germanium transistors NPN
NTE10-3
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Untitled
Abstract: No abstract text available
Text: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.
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2N4277
-15Ade,
-20Vde,
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germanium Power Transistor
Abstract: Vcb-60V NTE27 Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
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NTE27
NTE27
germanium Power Transistor
Vcb-60V
Germanium power
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germanium Power Transistor
Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
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NTE27
NTE27
germanium Power Transistor
pnp germanium transistor
germanium transistor pnp
GERMANIUM TRANSISTOR
Germanium power
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NTE158
Abstract: germanium audio Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium audio
Germanium power
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NTE158
Abstract: Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
Germanium power
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NTE179
Abstract: No abstract text available
Text: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating
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NTE179
NTE179
100mA
500mA,
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AC122
Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
Text: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~
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NKT223
2N1384
NKT304
2G320
AC116
2N565
2N566
AC122
2S856
OC75N
SK3006
oc75
2S8175
2N2613
pnp oc75
2S8135
Low-Power Germanium PNP
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bjt specifications
Abstract: 2N652A power BJT PNP
Text: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N652A
2N652A
com/2n652a
bjt specifications
power BJT PNP
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2N1303
Abstract: No abstract text available
Text: 2N1303 Ge PNP Lo-Pwr BJT 3.90 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1303 Online Store 2N1303 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics
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2N1303
2N1303
com/2n1303
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Untitled
Abstract: No abstract text available
Text: <$£mi-t,onauctoi ^Products., IJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4048 PNP germanium power transistors designed for high-cur rent applications requiring high gain and extremely low saturation voltage.
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2N4048
dc-60Ade,
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2N601
Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965
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2S8186
2Nl129
2S8486
MA1705
AC188K
2N3371
ACl15
2N601
TA761
asy26
2n6365
Low-Power Germanium PNP
2N3280
2N369
MXO55GA-4C-20.25M
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AF306
Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284
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2N1524
2N1426
2N1526
2N1527
AF147
AF150
AF148
AF200
AF306
2n2654
AF178
Low-Power Germanium PNP
AF186
2N3283
2N2672
2N77
GG10M
2N2929
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germanium transistor pnp
Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies
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WiOO/25A
2N240
uG-491A/U,
MIL-S-19500/25B
15SUE.
10UAL
germanium transistor pnp
GERMANIUM TRANSISTOR
2N240
S236
de-01 germanium transistor
boonton 91-6c
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2N2431
Abstract: Low-Power Germanium PNP 2N504 JI 32 AC184 2N544 ac151 2N3324 2n3325 ac125 germanium
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 AC153 AC153K AC153K 2N2431 AC126 ACY23 ACY23V ACY32 AC125 AC191 ~g~~~ 15 20 AC138 AC138 AC182 AC182 AC182 AC151 AC151 AC151 ~g~~~ 25 30 AC162 AC184 AC184 AC117 AC117 AC180 AC180 AC132 ~~~~~~ 35 40 2S8345
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AC153
AC153K
2N2431
AC126
ACY23
ACY23V
ACY32
AC125
AC191
Low-Power Germanium PNP
2N504
JI 32
AC184
2N544
ac151
2N3324
2n3325
ac125 germanium
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diode GG 64
Abstract: diode GG 71 AF118 Low-Power Germanium PNP ACY39 2N240 2G201 2G302 2N3604 ACY24
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 >= 2Gl024 2Gl024 2N2512 2N2512 2N2512 2G383 2G383 2G383 2Gl025 2Gl025 20 NKT237 ACY24 2Gl026 2Gl026 2Gl026 2G577 GT125L ACY17 ~~~g~~ 25 30 2Gl027 AF118 AF118 MA909 MA205 MA205 MA205 2N674 ~~~~~8 35 V BR CBO
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2Gl024
2N2512
2G383
2Gl025
2Gl025
diode GG 64
diode GG 71
AF118
Low-Power Germanium PNP
ACY39
2N240
2G201
2G302
2N3604
ACY24
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MR830
Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Text: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —
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MP600
MP603
MP600
MP601
MP602
MP603
MR830
germanium power transistors
Germanium power
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MP1613
Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
Text: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt
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MP1613
J001I
MP1613
MPT613
adc 515
pnp germanium low power transistor
100-C
Germanium power
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2N404 transistor
Abstract: 2N404 VCE0-20V Germanium power
Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage
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7X10-4
2N404 transistor
2N404
VCE0-20V
Germanium power
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2N1195
Abstract: Germanium power
Text: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:
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2N1195
MIL-S-19500/71D,
2N1195
Germanium power
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2N1224
Abstract: 2N1225
Text: MIL=S=195QQ/189B AMENDMENT 1 24 February 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 This amendment forms a part of Military Specifipation MIL-S-19500/189B, dated 18 January 1972, and is a^fioyed for use
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MIL-S-19500/189B
2N1224
2N1225
MIL-S-19500/189B,
MIL-STD-202"
2N1225
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