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    LOW VOLTAGE TRANSISTOR ELECTRONICS Search Results

    LOW VOLTAGE TRANSISTOR ELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW VOLTAGE TRANSISTOR ELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM389

    Abstract: LM389N LM386 "transistors Vceo" "low voltage audio power amplifier"
    Text: LM389 LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Literature Number: SNOSBT9A LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array Low quiescent current drain Voltage gains from 20 to 200 Y Ground referenced input Y Self-centering output quiescent voltage


    Original     		PDF LM389 LM389 LM386 LM389N "transistors Vceo" "low voltage audio power amplifier"

    BF370R

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 4.5 Emitter Base Voltage IC


    Original     		PDF BF370R 100uA, BF370R

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR PNP 1. BASE FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898


    Original     		PDF OT-89-3L OT-89-3L 2SB1260 2SD1898 -500mA -50mA -50mA, 30MHz

    JLN 2003

    Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
    Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.


    Original     		PDF 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR

    marking 123

    Abstract: STD123S
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR NPN SOT-23 FEATURES z Low saturation medium current application z Extremely low collector saturation voltage z Suitable for low voltage large current drivers


    Original     		PDF OT-23 STD123S OT-23 100mA 500mA, marking 123 STD123S

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR NPN SOT-23 FEATURES z Low saturation medium current application z Extremely low collector saturation voltage z Suitable for low voltage large current drivers


    Original     		PDF OT-23 STD123S OT-23 100mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 STC128 Plastic-Encapsulate Transistors TRANSISTOR NPN TO – 92 FEATURES z Low Saturation Medium Current Application z Extremely Low Collector Saturation Voltage z Suitable for Low Voltage Large Current Drivers


    Original     		PDF STC128 100mA 500mA,

    marking R33

    Abstract: 2SC4227 2SC4227-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4227 2SC4227 S21e2 2SC4227-T1 marking R33 2SC4227-T1

    2SC4226

    Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4226 2SC4226 S21e2 2SC4226-T1 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p

    2SC4228

    Abstract: 2SC4228-T1 TRANSISTOR R44
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


    Original     		PDF 2SC4228 2SC4228 S21e2 2SC4228-T1 2SC4228-T1 TRANSISTOR R44

    MPS-A93

    Abstract: No abstract text available
    Text: MPS-A93 PNP SILICON TRANSISTOR 'TO-92A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage


    OCR Scan     		PDF MPS-A93 O-92A 500mA 625mW 100fia 20MHz -0351O Boxt0477,

    Untitled

    Abstract: No abstract text available
    Text: 2SB772L SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA FNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR •ackage: TO-126 FEATURES current output up to 3A ♦Low saturation voltage *Con$femert lo 2SD882L APPLICATIONS


    OCR Scan     		PDF 2SB772L O-126 2SD882L 300uS -100uA -20mA

    Untitled

    Abstract: No abstract text available
    Text: 2SD882 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ NFN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA LOW VOLTAGE fflGH CURRENT TRANSISTOR Package: TO-92 FEATURES •High current output to 3A •Low saturation voltage •Complement to 2SB772 APPLICATIONS


    OCR Scan     		PDF 2SD882 2SB772 s300uS 100uA

    MPS-A93

    Abstract: No abstract text available
    Text: vir-^ÄW' PNP SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage


    OCR Scan     		PDF MPS-A93 O-92A 500mA 625mW 100nA 20MHz 3-89S429r3-898334â

    Untitled

    Abstract: No abstract text available
    Text: 2SB772 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA PNP H>ITAXIAL SILICON TRANSISTOR HIGH CURRENT LOW VOLTAGE TRANSISTOR Package: TO-92 FEATURES ♦High current output up to 3A ♦Low satuatkm voltage ♦Complement to 2SD882 APPLICATIONS


    OCR Scan     		PDF 2SB772 2SD882 300uS -100uA -20mA -10VIe

    Untitled

    Abstract: No abstract text available
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage


    OCR Scan     		PDF KSP94 MPSA44

    Untitled

    Abstract: No abstract text available
    Text: 1 MPS-A93 PNP SS SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage


    OCR Scan     		PDF MPS-A93 MPS-A93 500mA 625mW 20MHz Boxfc0477, QQ3369, fr99g4g3r3-89S

    Untitled

    Abstract: No abstract text available
    Text: MMBT2484 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR -SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF MMBT2484 -------SOT-23

    pnp transistor 600V

    Abstract: KTA1716 600v pnp switching 600V PNP
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching.


    OCR Scan     		PDF KTA1716 -600V -300mA, -60mA) -600V, 100mA --300mA, -60mA pnp transistor 600V KTA1716 600v pnp switching 600V PNP

    KST5086

    Abstract: KST5087 100khz 5v transistor BB569 transistor za
    Text: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature V


    OCR Scan     		PDF KST5086/5087 -100MA, KST5086 100ftA KST5087 -10mA KST5086 KST5087 100khz 5v transistor BB569 transistor za

    KTA1703

    Abstract: No abstract text available
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1703 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. : V Ceo = -400V • Low Collector Saturation Voltage


    OCR Scan     		PDF KTA1703 -400V -100mA, -10mA) KTA1703

    KTA1277

    Abstract: transistor ktA1277
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1277 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. LOW POWER SWITCHING REGULATOR. FEATURES • High Breakdown Voltage. • Low Collector Saturation Voltage. • High Speed Switching.


    OCR Scan     		PDF KTA1277 T0-92L transistor ktA1277

    2SC2603

    Abstract: 2SC2603 F 2SC2603 G 2SC2603 E sv micro 200EA
    Text: 2SC2603 SILICON TRANSISTOR TO-92B 2SC2603 is NPN silicen planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    OCR Scan     		PDF 2SC2603 2SC2603 O-92B 200EA 300mW VCB-50V 100mA -10mA1 300us, Box69477, 2SC2603 F 2SC2603 G 2SC2603 E sv micro

    transistor H-R

    Abstract: KST5088 KST5089 marking SAI
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage


    OCR Scan     		PDF KST5088/5089 KST5088 KST5089 100mA, ST5089 transistor H-R KST5088 KST5089 marking SAI