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    LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Search Results

    LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL542L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    DCL540L01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: Low / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation

    LOW VOLTAGE OUTPUT NPN SILICON EPITAXIAL PLANAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    to390

    Abstract: 2SC4132 marking 82
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4132 Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage


    Original     		PDF 2SC4132 80MHz) 40X40X0 30MHz to390 to390 2SC4132 marking 82

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD2074 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE


    Original     		PDF 2SD2074

    2SA1674

    Abstract: 2SC4391
    Text: Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SC4391 2SA1674 2SA1674 2SC4391

    2SD2184

    Abstract: No abstract text available
    Text: Transistors 2SD2184 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • High collector-emitter voltage Base open VCEO • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping


    Original     		PDF 2SD2184 2SD2184

    2SD1302

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.0±0.2 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD1302 2SD1302

    2SD1330

    Abstract: No abstract text available
    Text: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 1.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current


    Original     		PDF 2SD1330 2SD1330

    2SD2210G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD2210G 2SD2210G

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm


    Original     		PDF EN1609D 2SC3591 2010C 2SC3591] O-220AB

    EN1609D

    Abstract: No abstract text available
    Text: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm


    Original     		PDF EN1609D 2SC3591 2010C 2SC3591] O-220AB EN1609D

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron


    Original     		PDF 2002/95/EC) 2SD2210G

    2SD2210G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron


    Original     		PDF 2002/95/EC) 2SD2210G 2SD2210G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2459G Silicon NPN epitaxial planar type For low-frequency output amplification • Package ■ Features • High collector-emitter voltage (Base open) VCEO • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD2459G

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2185 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440 Unit: mm 4.5±0.1 * Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5


    Original     		PDF 2SD2185 2SB1440

    2SD1328

    Abstract: No abstract text available
    Text: Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2SD1328 2SD1328

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2185G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1440G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD2185G 2SB1440G

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current


    Original     		PDF 2SD1330

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SC5026G 2SA1890G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC


    Original     		PDF 2002/95/EC) 2SD2178

    2SD2178

    Abstract: No abstract text available
    Text: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter


    Original     		PDF 2SD2178 2SD2178

    2SD2457G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD2457G 2SD2457G

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2178 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC 16.0±1.0 • Absolute Maximum Ratings Ta = 25°C Parameter


    Original     		PDF 2SD2178

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2457G Silicon NPN epitaxial planar type For low-frequency output amplification • Package • High collector-emitter voltage (Base open) VCEO • Low collector power dissipation PC


    Original     		PDF 2002/95/EC) 2SD2457G

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6798~[ NPN Epitaxial Planar Silicon Transistor EC3202C Muting Circuit Applications Features • Ultrasmall-sized package, facilitates miniaturization in end products. • Low output capacitance. • Low collector-to-emitter saturation voltage.


    OCR Scan     		PDF ENN6798~ EC3202C EC3202C] E-CSP1008-4 IT02790

    2SB1439

    Abstract: 2SD2183 A985A
    Text: Power Transistors 2SD2183 2SD2183 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Output Amplifier Complementary Pair with 2SB1439 ■ Features • High collector-em itter voltage VCeo • Low collector-em itter saturation voltage (VcEisati)


    OCR Scan     		PDF 2SD2183 2SB1439 2SB1439 2SD2183 A985A