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    2SA1674 Price and Stock

    Panasonic Electronic Components 2SA16740SA

    TRANS PNP 80V 1A MT-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA16740SA Ammo Pack 2,000
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    • 10000 $0.18564
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    Panasonic Electronic Components 2SA1674-R(TA)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1674-R(TA) 1,284
    • 1 $0.515
    • 10 $0.515
    • 100 $0.515
    • 1000 $0.206
    • 10000 $0.206
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    2SA1674 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1674 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1674 Panasonic PNP Transistor Original PDF
    2SA1674 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1674 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1674 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1674 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1674 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1674 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA16740SA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80VCEO 1A MT-2 Original PDF
    2SA1674R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1674S Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1674S Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SA1674 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1674

    Abstract: 2SC4391
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SC4391 2SA1674 2SA1674 2SC4391

    2SA1674

    Abstract: 2SC4391
    Text: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.


    Original     		PDF 2SC4391 2SA1674 2SA1674 2SC4391

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SA1674 2SC4391

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm (φ0.8) 1.5±0.2 (1.05) 2SA1674+MA720 5 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st


    Original     		PDF UN601 2SA1674 MA720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SC4391 2SA1674

    2SA1674

    Abstract: 2SC4391
    Text: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


    Original     		PDF 2SA1674 2SC4391 2SA1674 2SC4391

    UN601

    Abstract: 2SA1674 MA720 of IC 4151
    Text: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm M Di ain sc te on na tin nc ue e/ d For DC–DC converter ● 2SA1674+MA720 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1


    Original     		PDF UN601 2SA1674 MA720 UN601 MA720 of IC 4151

    2SA1674

    Abstract: 2SC4391
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) 2SC4391 2SA1674 2SA1674 2SC4391

    UN601

    Abstract: No abstract text available
    Text: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm For DC–DC converter ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 2SA1674+MA720 0.6±0.1 ■ Absolute Maximum Ratings Transistor block


    Original     		PDF UN601 2SA1674 MA720 500mA 100mA, N-50BU PG-10N SAS-8130 100mA UN601

    2SA1674

    Abstract: 2SC4391
    Text: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 • Features ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO. Allowing supply with the radial taping.


    Original     		PDF 2SA1674 2SC4391 2SA1674 2SC4391

    2SA1674

    Abstract: 2SC4391
    Text: Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


    Original     		PDF 2SA1674 2SC4391 2SA1674 2SC4391

    2SA1674

    Abstract: 2SC4391
    Text: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).


    Original     		PDF 2SC4391 2SA1674 2SA1674 2SC4391

    2SC4391

    Abstract: 2SA1674
    Text: Transistor 2SC4391 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 1.05 ±0.05 0.15 6.9±0.1 0.7 2.5±0.1 1.45 4.0 0.8 • Absolute Maximum Ratings 0.2 1.0 1.0 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE(sat).


    Original     		PDF 2SC4391 2SA1674 2SC4391 2SA1674

    2SA1674

    Abstract: 2SC4391
    Text: Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SA1674 2SC4391 2SA1674 2SC4391

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SA1674 2SC4391

    2SA1674

    Abstract: 2SC4391
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SA1674 2SC4391 2SA1674 2SC4391

    2SA1674

    Abstract: 2SC4391
    Text: Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SC4391 2SA1674 2SA1674 2SC4391

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SA1674 2SC4391

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SC4391 2SA1674

    2SA1674

    Abstract: 2SC4391
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1674 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC4391 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) 2SA1674 2SC4391 2SA1674 2SC4391

    un604

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name 2SA1674 UN601 DC-DC converter UN602 UN604


    OCR Scan     		PDF UN601 2SA1674 2SA1674 M261L M262L UN604 UN1119 UN801 un604

    d20 diode

    Abstract: PA-120
    Text: Transistors Selection Guide by Applications and Functions Composite Transistors # 6 Pin Mini Power Type (D20): Diode +Transistors, Transistors, Resistor Built-in Transistors DC-DC converter UN602 UN603 UN604 Camera UN801 Vceo (V) (A) typ. (V) 2SA1674 Diode


    OCR Scan     		PDF UN601 2SA1674 MA720 M253L B3B07 M261L M262L UN1119 2SD1119 d20 diode PA-120

    UN603

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Composite Transistors • 6 Pin Mini Power Type (D17): Diode + Transistors + Resistor Built-in Transistors Application Functions Type No. Transistor Chip Name 2SA1674 UN601 (V) lc (A) - 80 - 1


    OCR Scan     		PDF 2SA1674 UN601 UN602 MA720 M253L B3B07 UN603 UN604 UN1119

    UN603

    Abstract: UN602 2SA1674 UN601 MA720 UN604 "TRANSISTORS SELECTION GUIDE" MAX80A
    Text: Transistors Selection Guide by Applications and Functions I Composite Transistors >6 Pin Mini Power Type (D17): Diode +Transistors, Transistors, Resistor Built-in Application Functions Type No. Transistor Chip Name VcEO lc (V) (A) -80 -1 2SA1674 UN601 DC-DC


    OCR Scan     		PDF 2SA1674 UN601 MA720 M253L UN602 B3B07 UN603 UN604 M261L "TRANSISTORS SELECTION GUIDE" MAX80A