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    LOW POWER 4K-BIT CMOS STATIC RAM Search Results

    LOW POWER 4K-BIT CMOS STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    LOW POWER 4K-BIT CMOS STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DL05

    Abstract: MDT11P0122 MDT11P0122LQ11 LCD05 R11EH
    Text: MDT11P0122 1General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 176 bytes of static RAM.


    Original     		PDF MDT11P0122 DL05 MDT11P0122 MDT11P0122LQ11 LCD05 R11EH

    10 ohm ldr

    Abstract: MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 sleep detector
    Text: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.


    Original     		PDF MDT10P65 10 ohm ldr MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 sleep detector

    100K20

    Abstract: DL05 MDT11P0122 MDT11P0122LQ11 8 pin IC 4914 R11EH r11ah toy remote control circuit diagram
    Text: MDT11P0122 1General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 176 bytes of static RAM.


    Original     		PDF MDT11P0122 100K20 DL05 MDT11P0122 MDT11P0122LQ11 8 pin IC 4914 R11EH r11ah toy remote control circuit diagram

    MDT10C65

    Abstract: K993 RT 8284 N
    Text: MDT10C65 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of ROM, and 192 bytes of static RAM.


    Original     		PDF MDT10C65 Temperature25 MDT10C65 K993 RT 8284 N

    MDT10P65

    Abstract: MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711
    Text: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.


    Original     		PDF MDT10P65 Temperature25 MDT10P65 MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711

    pin diagram of ic 741

    Abstract: sleep detector DL05 MDT11P0121 R110H R107H R112H
    Text: MDT11P0121 1General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 176 bytes of static RAM.


    Original     		PDF MDT11P0121 8/16-bit MDT10P0121 pin diagram of ic 741 sleep detector DL05 MDT11P0121 R110H R107H R112H

    MDT10P65

    Abstract: MDT10P65A1Q MDT10P65A2Q
    Text: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.


    Original     		PDF MDT10P65 MDT10P65 MDT10P65A1Q MDT10P65A2Q

    DSC1121

    Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
    Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption


    Original     		PDF IDT6168SA IDT6168LA 15/20/25/35/45/55/70/85/100ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, DSC1121 IDT6168 300mil SO20 Package IDT6168SA

    MDT10C65

    Abstract: No abstract text available
    Text: MDT10C65 1. General Description 3. Applications This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of ROM,


    Original     		PDF MDT10C65 MDT10C65

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA/LA x4033

    idt6168sa

    Abstract: IDT6168 6168LA45
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA IDT6168LA IDT6168 384-bit 6168LA45

    IDT6168

    Abstract: IDT6168LA IDT6168SA
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA/LA x4033 IDT6168 IDT6168SA

    3090

    Abstract: IDT6168 IDT6168LA IDT6168SA
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA/LA 3090 IDT6168 IDT6168SA

    IDT6168

    Abstract: IDT6168LA IDT6168SA
    Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 15/20/25/35/45ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, IDT6168 384-bit IDT6168SA

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA IDT6168LA IDT6168 384-bit

    SD231

    Abstract: No abstract text available
    Text: VITELIC CORP 13E D | TSQ531Q °DD0471 Û | T - L\ k V VITELIC - Z 3 - P S V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using


    OCR Scan     		PDF TSQ531Q DD0471 V61C68 4096word SD231

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using


    OCR Scan     		PDF V61C68 4096word V61C68*

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly


    OCR Scan     		PDF 61C68 200mW power-55mW IS61C68 IS61C68-15N IS61C68-L15N IS61C68-20N IS61C68-L20N IS61C68-25N

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly


    OCR Scan     		PDF 61C68 200mW power-55mW IS61C68 IS61C68-15N IS61C68-L15N IS61C68-20N IS61C68-L20N

    Untitled

    Abstract: No abstract text available
    Text: ISS 3 4K X 4-BIT CACHE-TAG CMOS STATIC RAM OCTOBER 1990 FEATURES DESCRIPTION • Very High Speed -1 2 ,1 5 , 20ns Max. • Fast output enable (tOE) for cache applications • CMOS Low Power Operation The ISSI IS61C180 is a high-speed, low power 4096 words by 4 bit static RAM. It is fabricated using ISSI's high


    OCR Scan     		PDF IS61C180 61C180 IS61C180-12N IS61C180-15N IS61C180-20N 733-ISSI 245-ISSI

    V61C68

    Abstract: C-4555 4k*4bit
    Text: V ITE LIC V61C68 FAMILY HIG H PERFORMANCE LOW POWER 4K x4B IT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using


    OCR Scan     		PDF V61C68 V61C68* 4096-word V61C68 C-4555 4k*4bit

    F03025

    Abstract: No abstract text available
    Text: ! i ISSI IS 61C70 4K X 4 HIGH SPEED CMOS STATIC RAM FEATURES DESCRIPTION • • The ISSI IS61C70 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design tech­


    OCR Scan     		PDF 61C70_ 200mW power-55mW IS61C70 61C70 IS61C70-15N IS61C70-L15N IS61C70-20N IS61C70-L20N IS61C70-25N F03025

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 61C70 4K X 4 HIGH SPEED CMOS STATIC RAM FEATURES DESCRIPTION • • The ISSI IS61C70 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design tech­


    OCR Scan     		PDF 61C70 200mW power-55mW IS61C70 IS61C70-15N IS61C70-L15N IS61C70-20N IS61C70-L20N

    5962-86705

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption


    OCR Scan     		PDF IDT6168SA IDT6168LA 12/15/20/25/35/45/55/70/85/100ns 10/12/15/20/25/35ns 1DT6168SA 225mW 100nW IDT6168LA 5962-86705