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    6168SA20 Search Results

    6168SA20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    6168SA20P Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    6168SA20DB Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    6168SA20SO8 Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    6168SA20PDG Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation
    6168SA20PI Renesas Electronics Corporation 16K(4KX4) CMOS STATIC RAM Visit Renesas Electronics Corporation

    6168SA20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA/LA x4033

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		PDF CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c

    idt6168sa

    Abstract: IDT6168 6168LA45
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA IDT6168LA IDT6168 384-bit 6168LA45

    81c78

    Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
    Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M


    Original     		PDF 2147-35C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35M 2148-45C 81c78 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference

    IDT6168

    Abstract: IDT6168LA IDT6168SA
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA/LA x4033 IDT6168 IDT6168SA

    3090

    Abstract: IDT6168 IDT6168LA IDT6168SA
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA/LA 3090 IDT6168 IDT6168SA

    IDT6168

    Abstract: IDT6168LA IDT6168SA
    Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 15/20/25/35/45ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, IDT6168 384-bit IDT6168SA

    DSC1121

    Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
    Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption


    Original     		PDF IDT6168SA IDT6168LA 15/20/25/35/45/55/70/85/100ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, DSC1121 IDT6168 300mil SO20 Package IDT6168SA

    IDT6168

    Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
    Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 15/20/25/35/45ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, IDT6168 384-bit IDT6168SA 6168LA35 6168SA 6168SA20

    27HC642

    Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		PDF 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C 27HC642 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 16K 4K x 4-Bit IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage


    Original     		PDF 25/45ns 15/20/25ns IDT6168LA 20-pin MIL-STD-883, IDT6168SA IDT6168LA IDT6168 384-bit

    IDT6168

    Abstract: IDT6168LA IDT6168SA
    Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage


    Original     		PDF IDT6168SA IDT6168LA 15/20/25/35/45ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, IDT6168 384-bit IDT6168SA

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage


    OCR Scan     		PDF IDT6168SA IDT6168LA 15/20/25/35/45ns 15/20/25/35ns IDT6168LA 20-pin 20pin M1L-STD-883, IDT6168 384-bit

    5962-86705

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption


    OCR Scan     		PDF IDT6168SA IDT6168LA 12/15/20/25/35/45/55/70/85/100ns 10/12/15/20/25/35ns 1DT6168SA 225mW 100nW IDT6168LA 5962-86705

    2Y202

    Abstract: dt6168 1N12J
    Text: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m ­


    OCR Scan     		PDF 2/15/20/25/35ns IDT6168SA 100pW IDT6168LA T6168LA 20-pin IDT61088A /lDT6168LA MIL-STD-883, 2Y202 dt6168 1N12J

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 2 /1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.) — Com mercial: 1 0 /1 2 /1 5/2 0 /2 5 /3 5 n s (max.)


    OCR Scan     		PDF IDT6168SA IDT6168LA T6168LA 20-pin 20-pin IDT6168SA/LA MIL-STD-883,

    IDT6168LA

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4KX 4-BIT IDT 6 I 68 SA IDT6¿68LA FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-bit h ig h -s p e e d sta tic RAM organized as 4K x 4. It Is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-rellability te c h n o lo g y — C EM O S . T h is state-of-the-art te c h n o lo g y , c o m ­


    OCR Scan     		PDF IDT6168 384-bit IDT6168SA/IDT6168LA MIL-STD-883, IDT6168LA

    d1994

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption


    OCR Scan     		PDF IDT6168SA IDT6168LA 15/20/25/35/45/55/70/85/100ns 15/20/25/35ns IDT6168LA 20-pin 20pin MIL-STD-883, d1994

    29S5

    Abstract: No abstract text available
    Text: IN T E GR AT ED DEVI CE SflE D CMOS STATIC RAM 16K 4Kx 4-BIT 4Ö 25 771 001 154 0 247 IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 1 2 /15/2 0/25 /35/45/5 5/70 /85/100ns (max.)


    OCR Scan     		PDF IDT6168SA IDT6168LA 10/12/15/20/25/35ns IDT6168LA 20-pin IDT6168SA/LA 29S5

    s431 ac

    Abstract: s431 A95E
    Text: mE INTEGRATED DEVICE D HÖ25771 □ 0 0 3 5 £i3 7 IDT 6168SA IDT 6168LA CMOS STATIC RAM 1 6K 4K x 4-BIT T - H h ' 1 3 - ö Z FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) Tiie IDT6168 Isa 16,384-blt high-speed static RAM organized as


    OCR Scan     		PDF 6168SA 6168LA 15/20/25/35/45/55/70/85/100ns 12/15/20/25/35ns IDT6168SA 225mW 100pW IDT6168LA s431 ac s431 A95E

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA 1DT6168LA Integrated Device Technology, Inc. nology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 10ns are available. The circuit also


    OCR Scan     		PDF IDT6168SA 1DT6168LA 12/15/20/25/35/45/55/70/85/100ns 10/12/15/20/25/35ns IDT6168LA 20-pin 20pin

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.) — Com mercial: 15 /20/2 5/35 n s (m ax.) • Low power consumption


    OCR Scan     		PDF IDT6168SA IDT6168LA 20-pin 384-bit 200mV 300mll P20-1) D20-1)