Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LOW NOISE TRANSISTORS FOR MICROWAVE Search Results

    LOW NOISE TRANSISTORS FOR MICROWAVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE TRANSISTORS FOR MICROWAVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT143 L03

    Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power


    Original     		PDF 5964-3854E SOT143 L03 L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com


    Original     		PDF MMBR911LT1 MMBR911LT1 OT-23 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF BFR92ALT1 BFR92ALT1 500MHz

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MMBR911LT1 MMBR911LT1 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-3.0dB@500MHz  Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF BFR92ALT1 BFR92ALT1 500MHz

    HP346A

    Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF

    yg 2025

    Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF 5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532

    Untitled

    Abstract: No abstract text available
    Text: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and


    Original     		PDF MP4T6365 MP4T6365 OT-143 MP4T636539

    MA4T636533

    Abstract: transistor sot-23 2613 MA4T6365
    Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    Original     		PDF MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613

    power 22E

    Abstract: micro-x micro-x mhz ghz microwave MPSIG001 S21E S22E
    Text: M-Pulse Microwave Low OperatingVoltage, High fT SiGe Microwave Transistors Features • Designed for Battery Operation • fT to 14 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic Packaging and Die Available • Can be Screened to JANTX, JANTXV Equivalent Levels


    Original     		PDF MPSIG001 MPSIG001 MPSIG001-535) MPSIG001-535 power 22E micro-x micro-x mhz ghz microwave S21E S22E

    MP4T6365

    Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23
    Text: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable


    Original     		PDF MP4T6365 MP4T6365 OT-143 MP4T636539 Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23

    NTE2402

    Abstract: No abstract text available
    Text: NTE2402 NPN & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies.


    Original     		PDF NTE2402 NTE2403 500MHz, 25MHz NTE2402

    TRANSISTOR C815

    Abstract: equivalent transistor C5001 ATF-58143 AV02-0913EN ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S
    Text: ATF-58143 E-pHEMT GaAs FET Low Noise Amplifier Design for 900 MHz Applications Application Note 1375 Introduction A critical first step in any LNA design is the selection of the ­active device. Low cost field ­effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure 0.6


    Original     		PDF ATF-58143 900MHz ATF-58143 AN-1281: ATF54143 5989-9554EN AV02-0913EN TRANSISTOR C815 equivalent transistor C5001 ATF581433 surface mount transistor c633 C5001 transistor fet curtice AN-1222 LL1005-FH2N2S

    PNP 2GHz LNA

    Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630
    Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630

    transistor C715

    Abstract: ATF-531P8 ATF531 AN-1222 ATF531P83 ATF-54143 BCV62C fet curtice mesfet fet
    Text: ATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


    Original     		PDF ATF-531P8 AN-1281: ATF-54143 5988-9545EN transistor C715 ATF531 AN-1222 ATF531P83 BCV62C fet curtice mesfet fet

    transistor ajw

    Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
    Text: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


    Original     		PDF ATF-55143 ATF-55143 AN-1281: ATF-54143 5988-9555EN transistor ajw ATF55143 Curtice AN-1222 ATF-551M4 ATF-5X143 55143

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    MRFC572

    Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain


    OCR Scan     		PDF MRF571 MRF572 MRFC572 MRF671 MRF572 MRFS72 MRF571, MRF572, MRFC572 MRF671 vk200* FERROXCUBE

    vk200* FERROXCUBE

    Abstract: MRF571
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA


    OCR Scan     		PDF MRF571 VK-200, 56-590-65/3B vk200* FERROXCUBE

    26-13 transistor sot-23

    Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
    Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages


    OCR Scan     		PDF MA4T6365XX MA4T636535 MA4T636539 OT-143 26-13 transistor sot-23 micro X Silicon Bipolar Transistor Micro-X Ceramic

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    t636

    Abstract: 557 sot143 T636 A S 223 858 015 636
    Text: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		PDF MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636

    MA4T636500

    Abstract: MA4T6365
    Text: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		PDF MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636500

    W1A sot23 transistor

    Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
    Text: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.


    OCR Scan     		PDF