telefun
Abstract: transistor Bf 979 BF979
Text: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking
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BF979
D-74025
telefun
transistor Bf 979
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Untitled
Abstract: No abstract text available
Text: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.
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BF979
BF970
D-74025
20-Aug-04
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Stackpole ferrite
Abstract: 2H5943 kc 0711
Text: 2H5943 1 NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low cross-modulation distortion and low-noise figure. Characterized for use in CATV applications. e Low Noise Figure– @f = 200 MHz r 1— A+ STYLE
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2H5943
Stackpole ferrite
2H5943
kc 0711
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BF979
Abstract: No abstract text available
Text: BF979 Silicon PNP RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation
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BF979
BF979
D-74025
31-Oct-97
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BF979
Abstract: Telefunken telefunken transistor
Text: BF979 Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 94 9308 1 BF979 Marking: BF979 Plastic case TO 50
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BF979
BF979
D-74025
16-Apr-96
Telefunken
telefunken transistor
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KSC900
Abstract: transistor 5d
Text: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol
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KSC900
KSC900
transistor 5d
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KSC900
Abstract: No abstract text available
Text: KSC900 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage VCBO=30V • Low Noise Level NL=50mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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KSC900
KSC900
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KSC1222
Abstract: No abstract text available
Text: KSC1222 KSC1222 Low Frequency Low Noise Amplifier • Collector-Base Voltage : VCBO=50V • Low Noise Level : NL=40mV MAX. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol
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KSC1222
KSC1222
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FPD1500DFN
Abstract: FPD750DFN FPD750SOT89
Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FPD750DFN
FPD750DFN
mx750
24dBm
85GHz
39dBm
85GHz)
EB750DFN-BA
FPD1500DFN
FPD750SOT89
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FPD1500
Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FPD1500DFN
FPD1500DFN
mx750
27dBm
85GHz
42dBm
85GHz)
EB1500DFN-BA
FPD1500
SSG 23 TRANSISTOR
stu 407
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 135
TRANSISTOR BC 157
FPD750SOT89
InGaAs hemt biasing
EB1500DFN-BE
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2N3906 PNP bipolar junction transistor
Abstract: ST 2n3904 TRANSISTOR PNP Microphone Preamplifiers antilog amplifier "Microphone Preamplifiers" "PNP Transistor array" pnp 8 transistor array pin configuration NPN transistor 2N3904 npn-pnp-transistors 2N3904
Text: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Microphone Preamplifiers · · Tape Head Preamplifiers Monolithic Construction · · Current Sources Low Noise
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THAT140
THAT140
2N3906 PNP bipolar junction transistor
ST 2n3904 TRANSISTOR PNP
Microphone Preamplifiers
antilog amplifier
"Microphone Preamplifiers"
"PNP Transistor array"
pnp 8 transistor array
pin configuration NPN transistor 2N3904
npn-pnp-transistors
2N3904
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Untitled
Abstract: No abstract text available
Text: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER TO-92 • Collector-Base Voltage: VCBO=50V • Low Noise Level: NL=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage
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KSC1222
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Untitled
Abstract: No abstract text available
Text: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction • Current Sources y Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors
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"Microphone Preamplifiers"
Abstract: pnp 8 transistor array npn 8 transistor array PNP monolithic Transistor Arrays preamplifier
Text: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS y 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers y Monolithic Construction • Current Sources y Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors
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Abstract: No abstract text available
Text: Low-Noise Matched Transistor Array Die THAT 380G FEATURES APPLICATIONS „ 4 Matched NPN and 4 Matched PNP • Microphone Preamplifiers „ Monolithic Construction • Current Sources „ Low Noise - 0.75 nV/ √Hz PNP - 0.8 nV/ √Hz (NPN) • Current Mirrors
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BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
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BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
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BF579
Abstract: BF579R
Text: BF579/BF579R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 1
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BF579/BF579R
BF579
BF579R
D-74025
31-Oct-97
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free transistor
Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package
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BFR740L3RH
free transistor
uln 2008
uln 2008 datasheet
Digital Oscilloscope Preamplifier
ULN 2009
ultra Low Noise ULN types
825000
LQP10A
MTA-100
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BF579
Abstract: BF579R marking GG
Text: BF579/BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency
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BF579/BF579R
BF579
BF579R
D-74025
20-Jan-99
marking GG
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KSC900-L
Abstract: No abstract text available
Text: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor
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KSC900
KSC900CGTA
KSC900LTA
KSC900GTA
KSC900CYTA
KSC900LBU
KSC900
KSC900-L
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KSC900
Abstract: No abstract text available
Text: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor
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KSC900
KSC900
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KSC900
Abstract: No abstract text available
Text: KSC900 KSC900 Low Frequency & Low Noise Amplifier • Collector-Base Voltage : VCBO=30V • Low Noise Level : NL=50mV MAX. • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor
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KSC900
KSC900
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —
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MRF587
MRF587
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