NE5814
Abstract: NE5814M14 HS350 microphone sensor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NE5814M14 P-CHANNEL LOW NOISE MOS FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF MICROPHONE 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG DESCRIPTION The NE5814M14 is a P-channel silicon MOS FET designed for use as impedance converter for microphone.
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NE5814M14
NE5814M14
NE5814or
PU10628EJ01V0DS
NE5814
HS350
microphone sensor
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Junction-FET
Abstract: 2SJ164 2SK1104 SC-72
Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
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2SJ164
2SK1104
SC-72
Junction-FET
2SJ164
2SK1104
SC-72
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2SK1104
Abstract: 2SJ0164 2SJ164 SC-72
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage
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2SJ0164
2SJ164)
2SK1104
SC-72
2SK1104
2SJ0164
2SJ164
SC-72
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name
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2002/95/EC)
2SJ0364G
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2SJ0364
Abstract: 2SJ364
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 • Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10
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2SJ0364
2SJ364)
2SJ0364
2SJ364
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2SK1104
Abstract: 2SJ0164 2SJ164
Text: Silicon Junction FETs Small Signal 2SJ0164 (2SJ164) Silicon P-channel junction FET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits Complementary to 2SK1104 (0.8) 0.75 max. • Features 15.6±0.5 • Low ON resistance • Low-noise characteristics
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2SJ0164
2SJ164)
2SK1104
2SK1104
2SJ0164
2SJ164
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name
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2002/95/EC)
2SJ0364G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2
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2002/95/EC)
2SJ0364G
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2SJ0364
Abstract: 2SJ364
Text: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Low ON resistance • Low-noise characteristics 0.9±0.1
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2SJ0364
2SJ364)
SC-70
2SJ0364
2SJ364
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Low ON resistance • Low-noise characteristics ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SJ0364G
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KU 05 G22
Abstract: pt 7313
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB T Y P at 12 GHz » HIGH ASSOCIATED GAIN: 12.0 dB T Y P at f = 12 GHz m • GATE LENGTH: < 0.20 \im
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
KU 05 G22
pt 7313
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3SK164
Abstract: UV 615 TUNER tuner uv 915 e tv sony 1435 tuner uv 915 3sk164-M TA 7332 tuner uv 615 dual-gate 3539 sony
Text: SONY C O R P / C O M P O N E N T PR OD S IflE D • 0305303 00051^4 3SK164/-M SO N Y GaAs N-Channel Dual-Gate MES FET t P ack a g e O utline Description The 3SK 164 /-M is a G aAs N-channel Dual-Gate M ES FET for low noise U H F amplifiers and mixers. Low noise,
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3SK164/-M
3SK164
3SK164-M
450MHz
880MHz
2000MHz
UV 615 TUNER
tuner uv 915 e
tv sony 1435
tuner uv 915
TA 7332
tuner uv 615
dual-gate
3539 sony
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T572S
Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Text: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain
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3fl23fl3
3SK147
800MHz
T572S
tv sony 1435
J50 O 26
dual-gate
17458
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KSK30
Abstract: 100K0 20H2
Text: SAMSUNG SEMICONDUCTOR INC^ KSK30 IME D §711^142 □OGb'HB | *P* SILICON N-CHANNEL JUNCJION FET LOW NOISE PRE-AMP. USE High Input Impedance: l,„= 1nA MAX Low Noise: NF=0.5dB (TYP) High Voltage: Vga, = -5 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSK30
100pA
Gate100
T-29-25
100K0
20H2
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PT 4207
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.0 dB T Y P a t f = 12 GHz
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NE425S01
NE425S01
Rn/50
NE425S01-T1
NE425S01-T1B
PT 4207
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cp 035 sanyo
Abstract: bau 95 2SK932
Text: SANYO SEMICONDUCTOR CORP SSE D 7 cn 7 0 7 t 000 3=1130 T 2SK932 T - 3 1 -2 5 N-Channel Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n er R F am p, low-noise am p F e a tu re s • Adoption o f F B E T process
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2SK932
T-3/-25
2SK932-applied
cp 035 sanyo
bau 95
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z
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176SC
MGF1425B
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cd 7678
Abstract: 3SK149 N-Channel, Dual-Gate FET 6908 dual-gate
Text: - -r.r. „ a m m i M m v a i m V , SONY COR P/CO MP ON EN T PRODS ~77 T '3 h A S DÉTjñ3ñE3B3 □□□Q220 3 3SK149 GaAs N-channel Dual-Gate MES FET Description: The 3SK149 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers. Low noise and high gain
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3a23fl3
0D00250
3SK149
3SK149
cd 7678
N-Channel, Dual-Gate FET
6908
dual-gate
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2SK4271
Abstract: ikv hd 2SK427 1404B
Text: Ordering n u m b er:E N 1404B ._ 2SK427 NO.1404B N-Channel Junction Silicon FET AM Tuner RF Amp Applications A p p licatio n s • AM tuner RF amps and low-noise amps. F e a tu re s • Large I y f8 I . • Ultralow noise figure. • Small Crss.
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EN1404B
1404B
2SK427
2SK4271
ikv hd
2SK427
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Untitled
Abstract: No abstract text available
Text: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • SUPER LOW NOISE FIGURE: 0.45 d B T Y P a t 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm
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NE27200
NE27200
IS12I
IS11Ia
IS12S21I
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SGM2016M
Abstract: SGM2016P Sony Semiconductor sony tuners HA 1166 NF 935 b 772 p dual-gate E-9217 sony 174A
Text: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET_ |For the availability of this product, please contact the sales office. Description Package Outline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This
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SGM2016M/P1
SGM2016M/P
900MHz
SGM2016M
SGM2016P
Sony Semiconductor
sony tuners
HA 1166
NF 935
b 772 p
dual-gate
E-9217
sony 174A
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LTC1429
Abstract: No abstract text available
Text: "Inductorless" DC/DC Converter Solutions LTC1261/LTC1429 Regulated Output Switched-Capacitor Inverters 3.3V Input, -4.5 Output GaAs FET Bias Generator LTC1550/LTC1551 Low Noise Regulated Output Switched Capacitor CHA P-CHANNEl 'ER:SWITCH POWER a LTC1550-4
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LTC1261/LTC1429
LTC1550/LTC1551
LTC1550-4
14-Lead
LTC1429
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TC2260
Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
Text: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain
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NE76083A
NE76083A)
NE76083A-2
TC2260
KU 506 transistor
NEC D 809 F
NE76083A
low noise FET NEC U
C band FET transistor s-parameters
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Untitled
Abstract: No abstract text available
Text: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3
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NE76083A
NE76083A)
NE76083A-2
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