Untitled
Abstract: No abstract text available
Text: BFP520 Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports Vcc = 2.9 V with enough 1 external collector resistance. • High gain and low noise at high frequencies
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BFP520
AEC-Q101
OT343
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LM4140
Abstract: tokin multilayer ceramic capacitor tokin ceramic 1e225zy5u-c203-f
Text: LM4140 LM4140 High Precision Low Noise Low Dropout Voltage Reference Literature Number: SNVS053D LM4140 High Precision Low Noise Low Dropout Voltage Reference General Description Features The LM4140 series of precision references are designed to combine high accuracy, low drift and noise with low power
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LM4140
LM4140
SNVS053D
tokin multilayer ceramic capacitor
tokin ceramic 1e225zy5u-c203-f
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Untitled
Abstract: No abstract text available
Text: LM6311 LM6311 Low Noise High Speed Voltage Feedback Operational Amplifier Literature Number: SNOS790A LM6311 Low Noise High Speed Voltage Feedback Operational Amplifier General Description Features The LM6311 is a low noise voltage feedback operational amplifier with low distortion This makes the LM6311 ideal
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LM6311
LM6311
SNOS790A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV
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2002/95/EC)
2SD2240G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV
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2002/95/EC)
2SD1821G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV
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2002/95/EC)
2SD2240G
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amplifier marking ADK
Abstract: No abstract text available
Text: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially
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NCV8570B
NCV8570B/D
amplifier marking ADK
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2SA921
Abstract: 2SA92 2SC1980 2SC198
Text: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter
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2SA921
2SC1980
2SA921
2SA92
2SC1980
2SC198
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18082 al
Abstract: No abstract text available
Text: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially
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NCV8570B
NCV8570B
NCV8570B/D
18082 al
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2SC1980
Abstract: TRANSISTOR 2SC1980 2SA921
Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter
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2SC1980
2SA921
2SC1980
TRANSISTOR 2SC1980
2SA921
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2SA0921
Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980
Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)
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2SC1980
2SA0921
2SA921)
2SA0921
2SA921
2SC1980
TRANSISTOR 2sc1980
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2SD1821
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821 Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package High collector-emitter voltage (Base open) VCEO Low noise voltage NV
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2002/95/EC)
2SD1821
2SD1821
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Untitled
Abstract: No abstract text available
Text: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially
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Original
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NCV8570B
NCV8570B/D
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PDF
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2SA0921
Abstract: 2SA921 2SC1980
Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)
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2SA0921
2SA921)
2SC1980
2SA0921
2SA921
2SC1980
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2SD1821A
Abstract: S-Mini3-G1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package High collector-emitter voltage (Base open) VCEO Low noise voltage NV
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2002/95/EC)
2SD1821A
2SD1821A
S-Mini3-G1
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2SD1821
Abstract: 2SD1821A
Text: Transistor 2SD1821, 2SD1821A Silicon NPN epitaxial planar type 0.425 Unit: mm For high breakdown voltage low-frequency and low-noise amplification 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • High collector to emitter voltage VCEO • Low noise voltage NV
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2SD1821,
2SD1821A
2SD1821
2SD1821
2SD1821A
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General Semiconductor diode marking 49
Abstract: NCV8570BSN18T1G ncv8570 marking AK
Text: NCV8570B 200 mA, Ultra Low Noise, High PSRR, LDO, Linear Voltage Regulator The NCV8570B is a 200 mA Low Dropout, Linear Voltage Regulator with ultra low noise characteristics. It’s low noise combined with high Power Supply Rejection Ratio PSRR make it especially
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NCV8570B
NCV8570B/D
General Semiconductor diode marking 49
NCV8570BSN18T1G
ncv8570
marking AK
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package High collector-emitter voltage (Base open) VCEO Low noise voltage NV
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2002/95/EC)
2SD1821A
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337 transistor
Abstract: 2SC1980 2SA921 Gv-80dB
Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. 0.7±0.2 ● • Absolute Maximum Ratings
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2SC1980
2SA921
337 transistor
2SC1980
2SA921
Gv-80dB
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1821 Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package High collector-emitter voltage (Base open) VCEO Low noise voltage NV
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2002/95/EC)
2SD1821
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Untitled
Abstract: No abstract text available
Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2
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2SA0921
2SA921)
2SC1980
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2SB0792
Abstract: 2SB0792A Marking Code 2FR
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0792A Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification • Package High collector-emitter voltage (Base open) VCEO Low noise voltage NV
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2002/95/EC)
2SB0792A
2SB0792
2SB0792A
Marking Code 2FR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Smatl Signal Line MRF927T1 MRF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors lc = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to
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SC-70)
MRF927T1
MRF927T3
393E-12
0E-12
38E-9
0E-15
92E-18
MRF927
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Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB
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PN2483,
PN2484
O-92A
N2484
BOXt9477
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