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    LOW NOISE HEMT Search Results

    LOW NOISE HEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE HEMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAX 8985

    Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
    Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		PDF CFH120 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 MAX 8985 pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10

    CFH120

    Abstract: CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P
    Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		PDF CFH120 CFH120-06 Q62705-K0671 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 CFH120 CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P

    5703 infineon

    Abstract: pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm
    Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		PDF CFH120 CFH120-06 Q62705-K0671 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 5703 infineon pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm

    pseudomorphic HEMT

    Abstract: CFH120-08 HEMT marking P
    Text: CFH120-08 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		PDF CFH120-08 Q62705-K0603 pseudomorphic HEMT CFH120-08 HEMT marking P

    Micro-X marking "K"

    Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
    Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz


    Original     		PDF MGF4941CL MGF4941CL 4000pcs Micro-X marking "K" low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3

    mgf4941al

    Abstract: MITSUBISHI electric R22 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure


    Original     		PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32

    GS 9521

    Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
    Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		PDF CFH120 CFH120-08 CFH120-10 GS 9521 CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727

    low noise amplifier ghz

    Abstract: amplifier 1 2 ghz
    Text: HMC-ALH482 AMPLIFIERS - LOW NOISE - CHIP v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482 low noise amplifier ghz amplifier 1 2 ghz

    MGF4963BL

    Abstract: InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
    Text: 16/Oct./2009 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4963BL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. FEATURES Low noise figure @ f=20GHz


    Original     		PDF 16/Oct MGF4963BL MGF4963BL 20GHz 4000pcs InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs

    Untitled

    Abstract: No abstract text available
    Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)


    Original     		PDF MGF4964BL MGF4964BL 20GHz 4000pcs

    MGF4941AL

    Abstract: MGF4941 GD-32
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure


    Original     		PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32

    top 261

    Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi

    MGF4963BL

    Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
    Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)


    Original     		PDF MGF4963BL MGF4963BL 20GHz 4000pcs HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B

    1 928 405 766

    Abstract: GD-32 rogers 4403
    Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)


    Original     		PDF MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v03.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    MARKING CODE l22 lna

    Abstract: No abstract text available
    Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. • Low noise figure The ATF-331M4’s small size and low profile makes it


    Original     		PDF ATF-331M4 ATF-331M4 family10 5989-4216EN AV02-3621EN MARKING CODE l22 lna

    vHF amplifier module

    Abstract: l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4 ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143
    Text: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. Features • Low noise figure The ATF-331M4’s small size and low profile makes it


    Original     		PDF ATF-331M4 ATF-331M4 5988-4993EN 5989-4216EN vHF amplifier module l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v04.1009 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH482 v00.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz


    Original     		PDF HMC-ALH482 HMC-ALH482

    ATF-38143

    Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features Surface Mount Package SOT-343 • Low Noise Figure Description Agilent Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead


    Original     		PDF ATF-38143 OT-343 SC-70 OT-343) SC-70) ATF-38143 5968-7868E ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2